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Researcher profile

Cécile Naud

Cécile Naud contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

2 published item(s)

preprint2022arXiv

Observation of two-mode squeezing in a traveling wave parametric amplifier

Traveling wave parametric amplifiers (TWPAs) have recently emerged as essential tools for broadband near quantum-limited amplification. However, their use to generate microwave quantum states still misses an experimental demonstration. In this letter, we report operation of a TWPA as a source of two-mode squeezed microwave radiation. We demonstrate broadband entanglement generation between two modes separated by up to 400 MHz by measuring logarithmic negativity between 0.27 and 0.51 and collective quadrature squeezing below the vacuum limit between 1.5 and 2.1 dB. This work opens interesting perspectives for the exploration of novel microwave photonics experiments with possible applications in quantum sensing and continuous variable quantum computing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Highly transparent contacts to the 1D hole gas in ultra-scaled Ge/Si core/shell nanowires

Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful application is the fabrication of high-quality and reproducible semiconductor-superconductor interfaces. Here, we realize and measure axial Al-Ge-Al nanowire heterostructures with atomically precise interfaces, enwrapped by an ultrathin epitaxial Si layer further denoted as Al-Ge/Si-Al nanowire heterostructures. The heterostructures were synthesized by a thermally induced exchange reaction of single-crystalline Ge/Si core/shell nanowires and lithographically defined Al contact pads. Applying this heterostructure formation scheme enables self-aligned quasi one-dimensional crystalline Al leads contacting ultrascaled Ge/Si segments with contact transparencies greater than 96%. Integration into back-gated field-effect devices and continuous scaling beyond lithographic limitations allows us to exploit the full potential of the highly transparent contacts to the 1D hole gas at the Ge-Si interface. This leads to the observation of ballistic transport as well as quantum confinement effects up to temperatures of 150 K. Low-temperature measurements reveal proximity-induced superconductivity in the Ge/Si core/shell nanowires. The realization of a Josephson field-effect transistor allows us to study the subgap structure caused by multiple Andreev reflections. Most importantly, the absence of a quantum dot regime indicates a hard superconducting gap originating from the highly transparent contacts to the 1D hole gas, which is potentially interesting for the study of Majorana zero modes. Moreover, underlining the importance of the proposed thermally induced Al-Ge/Si-Al heterostructure formation technique, our system could contribute to the development of key components of quantum computing such as gatemon or transmon qubits

0 citations0 reviewsNo code linkedOpen access