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Cécile Naud

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con quant-ph

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preprint2022arXiv

Observation of two-mode squeezing in a traveling wave parametric amplifier

Traveling wave parametric amplifiers (TWPAs) have recently emerged as essential tools for broadband near quantum-limited amplification. However, their use to generate microwave quantum states still misses an experimental demonstration. In this letter, we report operation of a TWPA as a source of two-mode squeezed microwave radiation. We demonstrate broadband entanglement generation between two modes separated by up to 400 MHz by measuring logarithmic negativity between 0.27 and 0.51 and collective quadrature squeezing below the vacuum limit between 1.5 and 2.1 dB. This work opens interesting perspectives for the exploration of novel microwave photonics experiments with possible applications in quantum sensing and continuous variable quantum computing.

preprint2020arXiv

Highly transparent contacts to the 1D hole gas in ultra-scaled Ge/Si core/shell nanowires

Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful application is the fabrication of high-quality and reproducible semiconductor-superconductor interfaces. Here, we realize and measure axial Al-Ge-Al nanowire heterostructures with atomically precise interfaces, enwrapped by an ultrathin epitaxial Si layer further denoted as Al-Ge/Si-Al nanowire heterostructures. The heterostructures were synthesized by a thermally induced exchange reaction of single-crystalline Ge/Si core/shell nanowires and lithographically defined Al contact pads. Applying this heterostructure formation scheme enables self-aligned quasi one-dimensional crystalline Al leads contacting ultrascaled Ge/Si segments with contact transparencies greater than 96%. Integration into back-gated field-effect devices and continuous scaling beyond lithographic limitations allows us to exploit the full potential of the highly transparent contacts to the 1D hole gas at the Ge-Si interface. This leads to the observation of ballistic transport as well as quantum confinement effects up to temperatures of 150 K. Low-temperature measurements reveal proximity-induced superconductivity in the Ge/Si core/shell nanowires. The realization of a Josephson field-effect transistor allows us to study the subgap structure caused by multiple Andreev reflections. Most importantly, the absence of a quantum dot regime indicates a hard superconducting gap originating from the highly transparent contacts to the 1D hole gas, which is potentially interesting for the study of Majorana zero modes. Moreover, underlining the importance of the proposed thermally induced Al-Ge/Si-Al heterostructure formation technique, our system could contribute to the development of key components of quantum computing such as gatemon or transmon qubits

preprint2015arXiv

Kerr coefficients of plasma resonances in Josephson junction chains

We present an experimental and theoretical analysis of the self- and cross-Kerr effect of extended plasma resonances in Josephson junction chains. We calculate the Kerr coefficients by deriving and diagonalizing the Hamiltonian of a linear circuit model for the chain and then adding the Josephson non-linearity as a perturbation. The calculated Kerr-coefficients are compared with the measurement data of a chain of 200 junctions. The Kerr effect manifests itself as a frequency shift that depends linearly on the number of photons in a resonant mode. By changing the input power on a low signal level, we are able to measure this shift. The photon number is calibrated using the self-Kerr shift calculated from the sample parameters. We then compare the measured cross-Kerr shift with the theoretical prediction, using the calibrated photon number.

preprint2013arXiv

Epitaxial graphene morphologies probed by weak (anti)-localization

We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the "pure" mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].

preprint2012arXiv

Coherent frequency conversion in a superconducting artificial atom with two internal degrees of freedom

By adding a large inductance in a dc-SQUID phase qubit loop, one decouples the junctions' dynamics and creates a superconducting artificial atom with two internal degrees of freedom. In addition to the usual symmetric plasma mode ({\it s}-mode) which gives rise to the phase qubit, an anti-symmetric mode ({\it a}-mode) appears. These two modes can be described by two anharmonic oscillators with eigenstates $\ket{n_{s}}$ and $\ket{n_{a}}$ for the {\it s} and {\it a}-mode, respectively. We show that a strong nonlinear coupling between the modes leads to a large energy splitting between states $\ket{0_{s},1_{a}}$ and $\ket{2_{s},0_{a}}$. Finally, coherent frequency conversion is observed via free oscillations between the states $\ket{0_{s},1_{a}}$ and $\ket{2_{s},0_{a}}$.

preprint2011arXiv

Novel E-beam lithography technique for in-situ junction fabrication: the controlled undercut

We present a novel shadow evaporation technique for the realization of junctions and capacitors. The design by E-beam lithography of strongly asymmetric undercuts on a bilayer resist enables in-situ fabrication of junctions and capacitors without the use of the well-known suspended bridge[1]. The absence of bridges increases the mechanical robustness of the resist mask as well as the accessible range of the junction size, from 0.01 to more than 10000 micron square. We have fabricated Al/AlOx/Al Josephson junctions, phase qubit and capacitors using a 100kV E- beam writer. Although this high voltage enables a precise control of the undercut, implementation using a conventional 20kV E-beam is also discussed. The phase qubit coherence times, extracted from spectroscopy resonance width, Rabi and Ramsey oscillations decay and energy relaxation measurements, are longer than the ones obtained in our previous samples realized by standard techniques. These results demonstrate the high quality of the junction obtained by this controlled undercut technique.

preprint2011arXiv

The Diamond SQUID

Diamond is an electrical insulator in its natural form. However, when doped with boron above a critical level (~0.25 at.%) it can be rendered superconducting at low temperatures with high critical fields. Here we present the realization of a micrometer scale superconducting quantum interference device $μ$-SQUID made from nanocrystalline boron doped diamond (BDD) films. Our results demonstrate that $μ$-SQUIDs made from superconducting diamond can be operated in magnetic fields as large as 4T independent on the field direction. This is a decisive step towards the detection of quantum motion in a diamond based nanomechanical oscillator.

preprint2010arXiv

Nanostructures made from superconducting boron doped diamond

We report on the transport properties of nanostructures made from boron-doped superconducting diamond. Starting from nanocrystalline superconducting boron-doped diamond thin films, grown by Chemical Vapor Deposition, we pattern by electron-beam lithography devices with dimensions in the nanometer range. We show that even for such small devices, the superconducting properties of the material are well preserved: for wires of width less than $100\, nm$, we measure critical temperatures in the Kelvin range and critical field in the Tesla range.

preprint2007arXiv

Electronic structure of epitaxial graphene layers on SiC: effect of the substrate

Recent transport measurements on thin graphite films grown on SiC show large coherence lengths and anomalous integer quantum Hall effects expected for isolated graphene sheets. This is the case eventhough the layer-substrate epitaxy of these films implies a strong interface bond that should induce perturbations in the graphene electronic structure. Our DFT calculations confirm this strong substrate-graphite bond in the first adsorbed carbon layer that prevents any graphitic electronic properties for this layer. However, the graphitic nature of the film is recovered by the second and third absorbed layers. This effect is seen in both the (0001)and $(000\bar{1})$ 4H SiC surfaces. We also present evidence of a charge transfer that depends on the interface geometry. It causes the graphene to be doped and gives rise to a gap opening at the Dirac point after 3 carbon layers are deposited in agreement with recent ARPES experiments (T.Ohta et al, Science {\bf 313} (2006) 951).