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Oleksandr I. Malyi

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Published work

10 published item(s)

preprint2021arXiv

Bulk NdNiO2 is thermodynamically unstable with respect to decomposition while hydrogenation reduces the instability and transforms it from metal to insulator

Through CaH2 chemical reduction of a parent R3+Ni3+O3 perovskite form, superconductivity was recently achieved in Sr-doped NdNiO2 on SrTiO3 substrate. Using density functional theory (DFT) calculations, we find that stoichiometric NdNiO2 is significantly unstable with respect to decomposition into 1/2[Nd2O3 + NiO + Ni] with exothermic decomposition energy of +176 meV/atom, a considerably higher instability than that for common ternary oxides. This poses the question if the stoichiometric NdNiO2 nickelate compound used extensively to model the electronic band structure of Ni-based oxide analog to cuprates and found to be metallic is the right model for this purpose. To examine this, we study via DFT the role of the common H impurity expected to be present in the process of chemical reduction needed to obtain NdNiO2. We find that H can be incorporated exothermically, i.e., spontaneously in NdNiO2, even from H2 gas. In the concentrated limit, such impurities can result in the formation of a hydride compound NdNiO2H, which has significantly reduced instability relative to hydrogen-free NdNiO2. Interestingly, the hydrogenated form has a similar lattice constant as the pure form (leading to comparable XRD patterns), but unlike the metallic character of NdNiO2, the hydrogenated form is predicted to be a wide gap insulator thus, requiring doping to create a metallic or superconducting state, just like cuprates, but unlike unhydrogenated nickelates. While it is possible that hydrogen would be eventually desorbed, the calculation suggests that pristine NdNiO2 is hydrogen-stabilized. One must exercise caution with theories predicting new physics in pristine stoichiometric NdNiO2 as it might be an unrealizable compound. Experimental examination of the composition of real NdNiO2 superconductors and the effect of hydrogen on the superconductivity is called for.

preprint2021arXiv

Dependence of band gaps in d-electron perovskite oxides on magnetism

Understanding the controlling principles of band gaps trends in d electron perovskites is needed both for gauging metal-insulator transitions, as well as their application in catalysis and doping. The magnitude of this band gap is rather different for different magnetic spin configurations. We find via electronic structure theory that the factors that connect gapping magnitudes to magnetism depend on the nature of the band edge orbital character (BEOC) and surprisingly scale with the number of antiferromagnetic contacts z$_i$ between neighboring transition metal ions. The dependence is weak when the BEOC are (d,d)-like ("Mott insulators"), whereas this dependence is rather strong in (p,d)-like ("charge transfer" insulators). These unexpected rules are traced to the reduced orbital interactions through the increase in the number of antiferromagnetic contacts between transition metal ions. The impact of magnetic order is not limited to the band gap magnitude and includes also the magnitude of lattice distortions connected to the electronic structure. These results highlight the importance of establishing in electronic structure theory of gap-related phenomena (doping, transport, metal-insulator transitions, conductive interfaces) the appropriate magnetic order.

preprint2021arXiv

Intrinsic local symmetry-breaking in nominally cubic paraelectric BaTiO3

Whereas low-temperature ferroelectrics have a well understood ordered spatial dipole arrangement, the fate of these dipoles in paraelectric phases remains poorly understood. Using density functional theory (DFT), we find that unlike the case in conventional non-polar ABO$_3$ compounds illustrated here for cubic BaZrO$_3$, the origin of the distribution of the B site off-centering in cubic paraelectric such as BaTiO$_3$ is an intrinsic, energy stabilizing symmetry breaking. Minimizing the internal energy E of a constrained cubic phase already reveals the formation of a distribution of intrinsic local displacements that (i) mimic the symmetries of the low temperature phases, while (ii) being the precursors of what finite temperature DFT Molecular Dynamics finds as thermal motifs. The implications of such symmetry breaking on the microscopic structures and anomalous properties in these kinds of PE materials are discussed.

preprint2021arXiv

Premelting and formation of ice due to Casimir-Lifshitz interactions: Impact of improved parameterization for materials

Recently, the premelting and formation of ice due to the Casimir-Lifshitz interaction, proposed in early 1990s by Elbaum and Schick [Phys. Rev. Lett. 66, 1713-1716 (1991)], have been generalized to diverse practical scenarios, yielding novel physical intuitions and possibilities of application for those phenomena. The properties of materials, in particular, the electrical permittivity and permeability, exert significant influences on the Casimir-Cifshitz energies and forces, and hence on the corresponding premelting and formation of ice. To address these influences in detail and explore the resulting physics, here we revisit and extend the analyses of previous work, with both the dielectric data utilized there and the latest dielectric functions for ice and cold water. While our previous results are rederived, an error there has also been spotted. For the four-layer cases considered by some of us, the existence of stable configurations depending on the initial conditions has been confirmed, and different types of stability corresponding to minima of the Casimir-Lifshitz free energy are demonstrated. As the new dielectric functions for ice and cold water deviate considerably from those used by Elbaum and Schick, their vital impacts on three- and four-layer configurations are therefore being reconsidered.

preprint2019arXiv

Spontaneous non-stoichiometry and ordering of metal vacancies in degenerate insulators

We point to a class of materials representing an exception to the Daltonian view that compounds maintain integer stoichiometry at low temperatures, because forming stoichiometry-violating defects cost energy. We show that carriers in the conduction band (CB) of degenerate insulators in Ca-Al-O, Ag-Al-O, or Ba-Nb-O systems can cause a self-regulating instability, whereby cation vacancies form exothermically because a fraction of the free carriers in the CB decay into the hole states formed by such vacancies, and this negative electron-hole recombination energy offsets the positive energy associated with vacancy bond breaking. This Fermi level-induced spontaneous non-stoichiometry can lead to the formation of crystallographically ordered vacancy compounds (OVCs), explaining the previously peculiar occurrence of unusual atomic sequences such as BalNbmOn with l:m:n ratios of 1:2:6, 3:5:15, or 9:10:30. This work has general ramifications as the degenerate insulators have found growing interests in many fields ranging from transparent conductors to electrides that are electron donating promotors for catalyst.

preprint2015arXiv

Anisotropic contribution to the van der Waals and the Casimir-Polder energies for CO$_2$ and CH$_4$ molecules near surfaces and thin films

In order to understand why carbon dioxide (CO$_2$) and methane (CH$_4$) molecules interact differently with surfaces, we investigate the Casimir-Polder energy of a linearly polarizable CO$_2$ molecule and an isotropically polarizable CH$_4$ molecule in front of an atomically thin gold film and an amorphous silica slab. We quantitatively analyze how the anisotropy in the polarizability of the molecule influences the van der Waals contribution to the binding energy of the molecule.

preprint2015arXiv

Comparison of alpha- and beta- tin for lithium, sodium, and magnesium storage: an ab initio study including phonon contributions

We present a comparative ab initio study of Li, Na, and Mg storage in tin, including phononic effects and phase competition between alpha and beta Sn. Mg doping at low concentration is found to stabilize the beta phase. On the contrary, Li and Na doping is shown to reverse the stability of the phases at room temperature: Li/Na-doped alpha-Sn is more stable than Li/Na-doped beta-Sn up to a temperature of around 380/400 K. This may rationalize the formation of alpha-Sn upon lithiation and delithiation of beta-Sn anodes reported in experimental studies. The changes in phase stability with Li/Na/Mg doping are directly related to the intercalation energies of Li/Na/Mg in one phase versus the other: at 300 K, Li/Na is easier intercalated in alpha-Sn (-0.37/-0.08 eV) than in beta-Sn (0.06/0.49 eV), while Mg intercalation energy is, although positive (i.e. unfavored intercalation), lower in beta-Sn (0.53 eV) than in alpha-Sn (0.66 eV). The temperature effect is found to affect significantly the intercalation energy, by up to 0.13 eV at 300 K. Analysis of diffusion barriers shows that Li, Na, and Mg diffusion in beta-Sn is anisotropic with migration barriers along the (001) direction (respectively 0.01, 0.22, and 0.07 eV) significantly lower than those in alpha-Sn (respectively 0.20, 0.52, and 0.40 eV).

preprint2015arXiv

Evaluation of Phosphorene as Anode Material for Na-ion Batteries from First Principles

We systematically evaluate the prospects of a novel 2D nanomaterial, phosphorene, as anode for Na-ion batteries. Using first-principles calculations, we determine the Na adsorption energy, specific capacity and Na diffusion barriers on monolayer phosphorene. We examine the main trends in electronic structure and mechanical properties as a function of Na concentration. We find favorable Na-phosphorene interaction with theoretical capacity, exceeding those of alternative monolayer anodes for Na-ion batteries. We find that Na-phosphorene undergoes semiconductor-metal transition at high Na concentration. Our results show that Na diffusion on phosphorene is fast and anisotropic with the energy barrier of only 0.04 eV. Owing to the high capacity, good stability, excellent electrical conductivity and high Na mobility, monolayer phosphorene is a very promising anode material for Na-ion batteries. The calculated performance in terms of specific capacity and diffusion barrier is compared to other layered 2D electrode materials, such as graphene, MoS2, polysilane, etc.

preprint2014arXiv

Comparative Computational Study of the Energetics of Li, Na, and Mg Storage in Amorphous and Crystalline Silicon

To assess the potential of amorphous Si (a-Si) as an anode for Li, Na, and Mg-ion batteries, the energetics of Li, Na, and Mg atoms in a-Si are computed from first-principles and compared to those in crystalline Si (c-Si). It is shown that Si preamorphization increases the average anode voltage and reduces the volume expansion of the anode during the insertion of the metal atoms. Analysis of computed formation energies of Li, Na, and Mg defects in a-Si and c-Si suggests that the energetics of the single atoms into a-Si are thermodynamically more favorable. For instance, defect formation energies of Li, Na, and Mg defects in a-Si are respectively 0.71, 1.72, and 1.82 eV lower compared to those in c-Si. Moreover, the defect formation energies of Li, Na, and Mg defects (vs. vacuum reference states) in a-Si are comparable with the metal cohesive energies and consequently the insertion of the metal atoms might be possible with appropriate control of charging process. This is in contrast to c-Si, where the storage of Na and Mg atoms is limited due to high energy cost of Na and Mg insertion into c-Si.

preprint2013arXiv

In search of high performance anode materials for Mg batteries: computational studies of Mg in Ge, Si, and Sn

We present ab initio studies of structures, energetics, and diffusion properties of Mg in Si, Ge, and Sn diamond structures to evaluate their potential as insertion type anode materials for Mg batteries. We show that Si could provide the highest specific capacities (3817 mAh g-1) and the lowest average insertion voltage (~0.15 eV vs. Mg) for Mg storage. Nevertheless, due to its significant percent lattice expansion (~216%) and slow Mg diffusion, Sn and Ge are more attractive; both anodes have lower lattice expansions (~120 % and ~178 %, respectively) and diffusion barriers (~0.50 and ~0.70 eV, respectively for single-Mg diffusion) than Si. We show that Mg-Mg interactions at different stages of charging can decrease significantly the diffusion barrier compared to the single atom diffusion, by up to 0.55 eV.