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Oleg Rubel

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Published work

5 published item(s)

preprint2022arXiv

Benchmarking exchange-correlation potentials with the mstar60 dataset: Importance of the nonlocal exchange potential for effective mass calculations in semiconductors

The accuracy of effective masses predicted by density functional theory depends on the exchange-correlation functional employed, with nonlocal hybrid functionals giving more accurate results than semilocal functionals. In this article, we benchmark the performance of the Perdew-Burke-Ernzerhof (PBE), Tran-Blaha modified Becke-Johnson (TB-mBJ), and the hybrid Heyd-Scuseria-Ernzerhof (HSE06) exchange-correlation functionals and potentials for the calculation of effective masses with perturbation theory. We introduce the mstar60 dataset, which contains 60 effective masses derived from 18 semiconductors. The ratio between experimental and calculated effective masses is $1.70 \pm 0.20$ for PBE, $0.76 \pm 0.04$ for TB-mBJ, $0.99 \pm 0.04$ for HSE06. We reveal that the nonlocal exchange in HSE06 enlarges the optical transition matrix elements leading to the superior accuracy of the hybrid functional in the calculation of effective masses. The omission of nonlocal exchange in the transition operator for HSE leads to serious errors. For the semilocal PBE functional, the errors in the bandgap and the optical transition matrix elements partially cancel out in the calculation of effective masses. The TB-mBJ functional yields PBE-like matrix elements paired with realistic bandgaps leading to a consistent overestimation of effective masses. However, if only limited computational resources are available, experimental masses can be estimated by multiplying TB-mBJ masses with the factor of 0.76. We then compare effective masses of transition metal dichalcogenide bulk and monolayer materials: we show that changes in the matrix elements are important in understanding the layer-dependent effective mass renormalization.

preprint2022arXiv

Electrochemical stability of ZnMn2O4: Understanding Zn-ion rechargeable battery capacity and degradation

We present a refined Mn-Zn-H$_2$O Pourbaix diagram with the emphasis on parameters relevant for the Zn/MnO$_2$ rechargeable cells. It maps out boundaries of electrochemical stability for MnO$_2$, ZnMn$_2$O$_4$, ZnMn$_3$O$_7$, and MnOOH. The diagram helps to rationalize experimental observation on processes and phases occurring during charge/discharge, including the position of charge/discharge redox peaks and capacity fade observed in rechargeable aqueous Zn-ion batteries for stationary storage. The proposed Pourbaix diagram is validated by observing the pH-dependent transformation of electrolytic manganese dioxide to hetaerolite and chalcophanite during discharge and charge, respectively. Our results can guide the selection of operating conditions (the potential range and pH) for existing aqueous Zn/MnO$_2$ rechargeable cells to maximise their longevity. In addition, the relation between electrochemical stability boundaries and operating conditions can be used as an additional design criterion in exploration of future cathode materials for aqueous rechargeable batteries.

preprint2022arXiv

Length-gauge optical matrix elements in WIEN2k

Hybrid exchange-correlation functionals provide superior electronic structure and optical properties of semiconductors or insulators as compared to semilocal exchange-correlation potentials due to admixing a portion of the non-local exact exchange potential from a Hartree-Fock theory. Since the non-local potential does not commute with the position operator, the momentum matrix elements do not fully capture the oscillator strength, while the length-gauge velocity matrix elements do. So far, length-gauge velocity matrix elements were not accessible in the all-electron full-potential WIEN2k package. We demonstrate the feasibility of computing length-gauge matrix elements in WIEN2k for a hybrid exchange-correlation functional based on a finite difference approach. To illustrate the implementation we determined matrix elements for optical transitions between the conduction and valence bands in GaAs, GaN, (CH$_3$NH$_3$)PbI$_3$ and a monolayer MoS$_2$. The non-locality of the Hartree-Fock exact exchange potential leads to a strong enhancement of the oscillator strength as noticed recently in calculations employing pseudopotentials [Laurien and Rubel: arXiv:2111.14772 (2021)]. We obtained an analytical expression for the enhancement factor in terms of the difference in eigenvalues not captured by the kinetic energy. It is expected that these results can also be extended to other non-local potentials, e.g., a many-body $GW$ approximation.

preprint2020arXiv

Perturbation approach to ab initio effective mass calculations

A degenerate perturbation $k\cdot p$ approach for effective mass calculations is implemented in the all-electron density functional theory (DFT) package WIEN2k. The accuracy is tested on major group IVA, IIIA-VA, and IIB-VIA semiconductor materials. Then, the effective mass in graphene and CuI with defects is presented as illustrative applications. For states with significant Cu-d character additional local orbitals with higher principal quantum numbers (more radial nodes) have to be added to the basis set in order to converge the results of the perturbation theory. Caveats related to a difference between velocity and momentum matrix elements are discussed in the context of application of the method to non-local potentials, such as Hartree-Fock/DFT hybrid functionals and DFT+U.

preprint2016arXiv

Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys

Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence of Eg has been found to be linear at low concentrations x and dominated by a valence band-defect level anticrossing between As and Bi occupied p levels. This dependence breaks down at high concentrations where empirical models accounting only for the As-Bi interaction are not applicable. Predictive models for the valence band hybridization require a first-principle understanding which can be obtained by density functional theory with the main challenges being the proper description of Eg and the spin-orbit coupling. By using an efficient method to include these effects, it is shown here that at high concentrations Eg is modified mainly by a Bi-Bi p orbital interaction and by the large Bi atom-induced strain. This points to the role of different atomic configurations obtained by varying the experimental growth conditions in engineering arsenide band gaps, in particular for telecommunication laser technology.