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Researcher profile

O. Gunawan

O. Gunawan contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2007arXiv

Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices

An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the sample. This is analogous to the well-known giant magnetoresistance (GMR) effect, with valley playing the role of spin and strain the role of magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

AlAs 2D electrons in an antidot lattice: Electron pinball with elliptical Fermi contours

We report ballistic transport measurements in a two-dimensional electron system confined to an AlAs quantum well and patterned with square antidot lattices of period $a = $0.6, 0.8, 1.0 and 1.5 $μ$m. In this system two in-plane conduction-band valleys with elliptical Fermi contours are occupied. The low-field magneto-resistance traces exhibit peaks corresponding to the commensurability of the cyclotron orbits and the antidot lattice. From the dependence of the position of the peak associated with the smallest commensurate orbit on electron density and $a$, we deduce the ratio of the longitudinal and transverse effective masses $m_l/m_t=5.2\pm 0.4$, a fundamental parameter for the anisotropic conduction bands in AlAs.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Spin-valley phase diagram of the two-dimensional metal-insulator transition

Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the quadrant where the system is both spin- and valley-polarized. This observation establishes the equivalent roles of spin and valley degrees of freedom in the 2D metal-insulator transition.

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preprint2006arXiv

Two-dimensional electrons occupying multiple valleys in AlAs

Two-dimensional electrons in AlAs quantum wells occupy multiple conduction-band minima at the X- points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the stan-dard GaAs electrons, and are also highly anisotropic. With proper choice of well width and by applying symmetry-breaking strain in the plane, one can control the occupation of different valleys thus rendering a system with tuneable effective mass, g-factor, Fermi contour anisotropy, and valley degeneracy. Here we review some of the rich physics that this system has allowed us to explore.

0 citations0 reviewsNo code linkedOpen access