Researcher profile

T. Gokmen

T. Gokmen contributes to research discovery and scholarly infrastructure.

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Published work

10 published item(s)

preprint2012arXiv

Effective Mass and Spin Susceptibility of Dilute Two-Dimensional Holes in GaAs

We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p \sim 7 \times 10^{10}$ cm$^{-2}$, $r_{s} \sim 6$) two-dimensional (2D) hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose $m^{*}$ we measure to be $\sim $ 0.2 (in units of the free electron mass). Despite the relatively large $r_{s}$ in our 2D system, the measured $m^{*}$ is in good agreement with the results of our energy band calculations which do not take interactions into account. We hen apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and measure $m^{*}$ for the populated subband. We find that this latter $m^{*}$ is surprisingly close to the $m^{*}$ we measure in the absence of the parallel field. We also deduce the spin susceptibility of the 2D hole system from the depopulation field, and conclude that the susceptibility is enhanced by about 50% relative to the value expected from the band calculations.

preprint2010arXiv

Contrast between spin and valley degrees of freedom

We measure the renormalized effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we control their distribution between two spin and two valley subbands. We observe a marked contrast between the spin and valley degrees of freedom: When electrons occupy two spin subbands, m* strongly depends on the valley occupation, but not vice versa. Combining our m* data with the measured spin and valley susceptibilities, we find that the renormalized effective Lande g-factor strongly depends on valley occupation, but the renormalized conduction-band deformation potential is nearly independent of the spin occupation.

preprint2010arXiv

Ferromagnetic Fractional Quantum Hall States in a Valley-Degenerate Two-Dimensional Electron System

We study a two-dimensional electron system where the electrons occupy two conduction band valleys with anisotropic Fermi contours and strain-tunable occupation. We observe persistent quantum Hall states at filling factors $ν= 1/3$ and 5/3 even at zero strain when the two valleys are degenerate. This is reminiscent of the quantum Hall ferromagnet formed at $ν= 1$ in the same system at zero strain. In the absence of a theory for a system with anisotropic valleys, we compare the energy gaps measured at $ν= 1/3$ and 5/3 to the available theory developed for single-valley, two-spin systems, and find that the gaps and their rates of rise with strain are much smaller than predicted.

preprint2010arXiv

Temperature dependence of piezoresistance of composite Fermions with a valley degree of freedom

We report transport measurements of composite Fermions at filling factor $ν=3/2$ in AlAs quantum wells as a function of strain and temperature. In this system the composite Fermions possess a valley degree of freedom and show piezoresistance qualitatively very similar to electrons. The temperature dependence of the resistance (R) of composite Fermions shows a metallic behavior (dR/dT > 0) for small values of valley polarization but turns insulating (dR/dT < 0) as they are driven to full valley polarization. The results highlight the importance of discrete degrees of freedom in the transport properties of composite Fermions and the similarity between composite Fermions and electrons.

preprint2010arXiv

Transference of Transport Anisotropy to Composite Fermions

When interacting two-dimensional electrons are placed in a large perpendicular magnetic field, to minimize their energy, they capture an even number of flux quanta and create new particles called composite fermions (CFs). These complex electron-flux-bound states offer an elegant explanation for the fractional quantum Hall effect. Furthermore, thanks to the flux attachment, the effective field vanishes at a half-filled Landau level and CFs exhibit Fermi-liquid-like properties, similar to their zero-field electron counterparts. However, being solely influenced by interactions, CFs should possess no memory whatever of the electron parameters. Here we address a fundamental question: Does an anisotropy of the electron effective mass and Fermi surface (FS) survive composite fermionization? We measure the resistance of CFs in AlAs quantum wells where electrons occupy an elliptical FS with large eccentricity and anisotropic effective mass. Similar to their electron counterparts, CFs also exhibit anisotropic transport, suggesting an anisotropy of CF effective mass and FS.

preprint2009arXiv

Effective mass suppression in a ferromagnetic two-dimensional electron liquid

We present numerical calculations of the electron effective mass in an interacting, ferromagnetic, two-dimensional electron system. We consider quantum interaction effects associated with the charge-density fluctuation induced many-body vertex corrections. Our theory, which is free of adjustable parameters, reveals that the effective mass is suppressed (relative to its band value) in the strong coupling limit, in good agreement with the results of recent experimental measurements.

preprint2009arXiv

Effective mass suppression upon complete spin-polarization in an isotropic two-dimensional electron system

We measure the effective mass (m*) of interacting two-dimensional electrons confined to a 4.5 nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane conduction band valley with an isotropic in-plane Fermi contour. When the electrons are partially spin polarized, m* is larger than its band value and increases as the density is reduced. However, as the system is driven to full spin-polarization via the application of a strong parallel magnetic field, m* is suppressed down to values near or even below the band mass. Our results are consistent with the previously reported measurements on wide AlAs quantum wells where the electrons occupy an in-plane valley with an anisotropic Fermi contour and effective mass, and suggest that the effective mass suppression upon complete spin polarization is a genuine property of interacting two-dimensional electrons.

preprint2009arXiv

Observation of fractional quantum Hall effect at even-denominator 1/2 and 1/4 fillings in asymmetric wide quantum wells

We report the observation of developing fractional quantum Hall states at Landau level filling factors $ν= 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The very large electric subband separation and the highly asymmetric charge distribution at which we observe these quantum Hall states, together with the fact that they disappear when the charge distribution is made symmetric, suggest that these are one-component states, possibly described by the Moore-Read Pfaffian wavefunction.

preprint2007arXiv

Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices

An AlAs two-dimensional electron system patterned with an anti-dot lattice exhibits a giant piezoresistance (GPR) effect, with a sign opposite to the piezoresistance observed in the unpatterned region. We trace the origin of this anomalous GPR to the non-uniform strain in the anti-dot lattice and the exclusion of electrons occupying the two conduction band valleys from different regions of the sample. This is analogous to the well-known giant magnetoresistance (GMR) effect, with valley playing the role of spin and strain the role of magnetic field.

preprint2006arXiv

Spin-valley phase diagram of the two-dimensional metal-insulator transition

Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system&#39;s valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the quadrant where the system is both spin- and valley-polarized. This observation establishes the equivalent roles of spin and valley degrees of freedom in the 2D metal-insulator transition.