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O. A. Tretiakov

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other hep-th

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preprint2022arXiv

Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature

Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of these textures, which have gained significant attention because of their potential for terahertz dynamics, deflection free motion, and improved size scaling due to the absence of stray field. Here we show that topological spin textures, merons and antimerons, can be generated at room temperature and reversibly moved using electrical pulses in thin film CuMnAs, a semimetallic antiferromagnet that is a testbed system for spintronic applications. The electrical generation and manipulation of antiferromagnetic merons is a crucial step towards realizing the full potential of antiferromagnetic thin films as active components in high density, high speed magnetic memory devices.

preprint2016arXiv

Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr$_2$O$_3$ is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr$_2$O$_3$ the maximal mobility of 0.1 m/(s$\times$Oe) is reached at $E\approx0.06$ V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr$_2$O$_3$. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s$\times$Oe) can then be achieved at $E=0.2$ V/nm. A split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.

preprint2015arXiv

Topologically Protected Dynamics of Spin Textures

We study current-induced dynamics of spin textures in thin magnetic nanowires. We derive effective equations of motion describing the dynamics of the domain-wall soft modes associated with topological defects. Because the magnetic domain walls are topological objects, these equations are universal and depend only on a few parameters. We obtain spin spiral domain-wall structure in ferromagnetic wires with Dzyaloshinskii-Moriya interaction and critical current dependence on this interaction. We also find the most efficient way to move the domain walls by resonant current pulses and propose a procedure to determine their dynamics by measuring the voltage induced by a moving domain wall. Based on translationally non-invariant nanowires, we show how to make prospective magnetic memory nanodevices much more energy efficient.

preprint2014arXiv

Magnetoelectric effect in topological insulator films beyond the linear response regime

We study the response of topological insulator films to strong magnetic and electric fields beyond the linear response theory. As a model, we use the three-dimensional lattice Wilson-Dirac Hamiltonian where we simultaneously introduce both magnetic field through the Peierls substitution and electric field as a potential energy depending on lattice coordinate. We compute the electron energy spectrum by numerically diagonalizing this Hamiltonian and obtain quantized magnetoelectric polarizability. In addition, we find that the magnetoelectric effect vanishes as the film width decreases due to the hybridization of surface wave functions. Furthermore, applying a gate voltage between the surfaces, we observe several quantized plateaus of $θ$ term, which are mainly determined by the Landau level structures on the top and bottom surfaces.

preprint2014arXiv

Spin Seebeck power generators

We derive expressions for the efficiency and figure of merit of two spin caloritronic devices based on the spin Seebeck effect (SSE), i.e., the generation of spin currents by a temperature gradient. The inverse spin Hall effect is conventionally used to detect the SSE and offers advantages for large area applications. We also propose a device that converts spin current into electric one by means of a spin-valve detector, which scales favorably to small sizes and approaches a figure of merit of 0.5 at room temperature.

preprint2013arXiv

Staggered Dynamics in Antiferromagnets by Collective Coordinates

Antiferromagnets can be used to store and manipulate spin information, but the coupled dynamics of the staggered field and the magnetization are very complex. We present a theory which is conceptually much simpler and which uses collective coordinates to describe staggered field dynamics in antiferromagnetic textures. The theory includes effects from dissipation, external magnetic fields, as well as reactive and dissipative current-induced torques. We conclude that, at low frequencies and amplitudes, currents induce collective motion by means of dissipative rather than reactive torques. The dynamics of a one-dimensional domain wall, pinned at 90$^{\circ}$ at its ends, are described as a driven harmonic oscillator with a natural frequency inversely proportional to the length of the texture.

preprint2011arXiv

Thermoelectric efficiency of topological insulators in a magnetic field

We study the thermoelectric properties of three-dimensional topological insulators in magnetic fields with many holes (or pores) in the bulk. We find that at high density of these holes in the transport direction the thermoelectric figure of merit, ZT, can be large due to the contribution of the topologically protected conducting surfaces and the suppressed phonon thermal conductivity. By applying an external magnetic field a subgap can be induced in the surface states spectrum. We show that the thermoelectric efficiency can be controlled by this tunable subgap leading to the values of ZT much greater than 1. Such high values of ZT for reasonable system parameters and its tunability by magnetic field make this system a strong candidate for applications in heat management of nanodevices, especially at low temperatures.

preprint2010arXiv

Thermoelectric transport of perfectly conducting channels in two- and three-dimensional topological insulators

Topological insulators have gapless edge/surface states with novel transport properties. Among these, there are two classes of perfectly conducting channels which are free from backscattering: the edge states of two-dimensional topological insulators and the one-dimensional states localized on dislocations of certain three-dimensional topological insulators. We show how these novel states affect thermoelectric properties of the systems and discuss possibilities to improve the thermoelectric figure of merit using these materials with perfectly conducting channels.

preprint2007arXiv

Vortices in thin ferromagnetic films and the skyrmion number

We point out that a peculiar annihilation of a vortex-antovortex pair observed numerically by Hertel and Schneider [Phys. Rev. Lett. 97, 177202 (2006)] represents the formation and subsequent decay of a skyrmion.