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Jairo Sinova

Jairo Sinova appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.dis-nncond-mat.othercond-mat.stat-mechphysics.app-phquant-ph

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Published work

57 published item(s)

preprint2022arXiv

Emerging research landscape of altermagnetism

Magnetism is one of the largest, most fundamental, and technologically most relevant fields of condensed-matter physics. Traditionally, two basic magnetic phases have been considered -- ferromagnetism and antiferromagnetism. The breaking of the time-reversal symmetry and spin splitting of the electronic states by the magnetization in ferromagnets underpins a range of macroscopic responses in this extensively explored and exploited type of magnets. By comparison, antiferromagnets have vanishing net magnetization. This Perspective reflects on recent observations of materials hosting an intriguing ferromagnetic-antiferromagnetic dichotomy, in which spin-split spectra and macroscopic observables, akin to ferromagnets, are accompanied by antiparallel magnetic order with vanishing magnetization, typical of antiferromagnets. An unconventional non-relativistic symmetry-group formalism offers a resolution of this apparent contradiction by delimiting a third basic magnetic phase, dubbed altermagnetism. Our Perspective starts with an overview of the still emerging unique phenomenology of the phase, and of the wide array of altermagnetic material candidates. In the main part of the article, we illustrate how altermagnetism can enrich our understanding of overarching condensed-matter physics concepts, and have impact on prominent condensed-matter research areas.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Indirect optical manipulation of the antiferromagnetic order of insulating NiO by ultrafast interfacial energy transfer

We report the ultrafast, (sub)picosecond reduction of the antiferromagnetic order of the insulating NiO thin film in a Pt/NiO bilayer. This reduction of the antiferromagnetic order is not present in pure NiO thin films after a strong optical excitation. This ultrafast phenomenon is attributed to an ultrafast and highly efficient energy transfer from the optically excited electron system of the Pt layer into the NiO spin system. We propose that this energy transfer is mediated by a stochastic exchange scattering of hot Pt electrons at the Pt/NiO interface.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Defect-driven antiferromagnetic domain walls in CuMnAs films

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 degree and 90 degree domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Direct Observation of Antiferromagnetic Parity Violation in the Electronic Structure of Mn$_2$Au

Parity symmetric photoemission spectra are ubiquitous in solid state research, being prevalent in many highly active areas, such as unconventional superconductors, nonmagnetic and antiferromagnetic topological insulators, and weakly relativistic collinear magnets, among others. The direct observation of parity-violating metallic Kramers degenerate bands has remained hitherto experimentally elusive. Here we observe the antiferromagnetic parity violation (APV) in the bandstructure of Mn$_2$Au thin films by using momentum microscopy with sub-$mu$m spatial resolution, allowing momentum resolved photoemission on single antiferromagnetic domains. The APV arises from breaking the P symmetry of the underlying crystal structure by the collinear antiferromagnetism, while preserving the joint space-time inverison PT -symmetry and in combination with large spin-orbit coupling. In addition, our work also demonstrates a novel tool to directly image the Neel vector direction by combining spatially resolved momentum microscopy with ab-initio calculations.

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preprint2021arXiv

Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching

We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced spin-flop transition of the CoO layer. By applying current pulses and magnetic fields, we quantify the efficiency of the acting current-induced torques and estimate a current-field equivalence ratio of $4x10^{-11} T A^{-1} m^2$. The Néel vector final state ($n \perp j$) is in line with a thermomagnetoelastic switching mechanism for a negative magnetoelastic constant of the CoO.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Propagation length of antiferromagnetic magnons governed by domain configurations

The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin films. However, the reported decay length in thin films has so far been limited to a few nanometers. In this work, we achieve efficient spin-wave propagation, over micrometer distances, in thin films of the insulating antiferromagnet hematite with large magnetic domains whilst evidencing much shorter attenuation lengths in multidomain thin films. Through transport and magnetic imaging, we conclude on the role of the magnetic domain structure and spin-wave scattering at domain walls to govern the transport. We manipulate the spin transport by tailoring the domain configuration through field cycle training. For the appropriate crystalline orientation, zero-field spin-transport is achieved across micrometers, as required for device integration.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit

We report room temperature long-distance spin transport of magnons in antiferromagnetic thin film hematite doped with Zn. The additional dopants significantly alter the magnetic anisotropies, resulting in a complex equilibrium spin structure that is capable of efficiently transporting spin angular momentum at room temperature without the need for a well-defined, pure easy-axis or easy-plane anisotropy. We find intrinsic magnon spin-diffusion lengths of up to 1.5 μm, and magnetic domain governed decay lengths of 175 nm for the low frequency magnons, through electrical transport measurements demonstrating that the introduction of non-magnetic dopants does not strongly reduce the transport length scale showing that the magnetic damping of hematite is not significantly increased. We observe a complex field dependence of the non-local signal independent of the magnetic state visible in the local magnetoresistance and direct magnetic imaging of the antiferromagnetic domain structure. We explain our results in terms of a varying and applied-field-dependent ellipticity of the magnon modes reaching the detector electrode allowing us to tune the spin transport.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Engineering the molecular structure to optimize the spin Hall signal in organics

In this study, by engineering the molecular structure, we optimize the spin Hall conductivity and the spin Hall angle in organics by more than five and three orders of magnitude, respectively. We identify two important characteristics of organic molecules, namely substitution of heavy elements and the torsion angles between constituent units of the polymer, which have significant effects on the spin Hall signal. These characteristics are directly related to the spin-orbit coupling and the energetic disorder, both of which offer a wide scope of chemical tunability in high-mobility polymers. We compute the spin Hall characteristics for easily synthesized molecules and identify candidates to exhibit the largest spin Hall signals in organic systems, several orders of magnitude larger than previously observed. The present study brings organic spintronics, by introducing polymers with much stronger spin Hall signal, closer to their inorganic counterparts.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tuning Spin Current Injection at Ferromagnet/Non-Magnet Interfaces by Molecular Design

There is a growing interest in utilizing the distinctive material properties of organic semiconductors for spintronic applications. Here, we explore injection of pure spin current from Permalloy into a small molecule system based on dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) at ferromagnetic resonance. The unique tunability of organic materials by molecular design allows us to study the impact of interfacial properties on the spin injection efficiency systematically. We show that both, spin injection efficiency at the interface as well as the spin diffusion length can be tuned sensitively by the interfacial molecular structure and side chain substitution of the molecule.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Engineering the dynamics of topological spin textures by anisotropic spin-orbit torques

Integrating topologically stabilized magnetic textures such as skyrmions as nanoscale information carriers into future technologies requires the reliable control by electric currents. Here, we uncover that the relevant skyrmion Hall effect, which describes the deflection of moving skyrmions from the current flow direction, acquires important corrections owing to anisotropic spin-orbit torques that alter the dynamics of topological spin structures. Thereby, we propose a viable means for manipulating the current-induced motion of skyrmions and antiskyrmions. Based on these insights, we demonstrate by first-principles calculations and symmetry arguments that the motion of spin textures can be tailored by materials design in magnetic multilayers of Ir/Co/Pt and Au/Co/Pt. Our work advances the understanding of the current-induced dynamics of these magnetic textures, which underlies a plethora of memory and logic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Stability and dynamics of in-plane skyrmions in collinear ferromagnets

We study the emergence and dynamics of in-plane skyrmions in collinear ferromagnetic heterostructures. We present a minimal energy model for this class of magnetic textures, determine the crystal symmetries compatible with it and propose material candidates, based on symmetries only, for the observation of these topological solitons. We calculate exact solutions of the energy model for in-plane skyrmions in the absence of dipolar interactions at critical coupling, the latter defined by the relations $H = K$ and $D = \sqrt{AK}$ for the strength of the external magnetic field and the Dzyaloshinskii coupling constant, respectively, with $K$ and $A$ being the anisotropy constant and the exchange stiffness of the material. Through micromagnetic simulations, we demonstrate the possibility of in-plane skyrmion production via i) the motion of domain walls through a geometrical constriction and ii) shedding from a magnetic impurity driven both by spin-transfer torques. In-plane skyrmion dynamics triggered by spin-orbit torques are also investigated analytically and numerically. Our findings point towards the possibility of designing racetracks for in-plane skyrmions, whose speed could be tuned by adjusting the angle between the charge current and the uniform background magnetization; in particular, the speed is maximum for currents parallel to the easy axis and becomes zero for currents transverse to it.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Electrical switching of perpendicular magnetization in L10 FePt single layer

Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) bilayers via the spin Hall effect in the HM and/or the Rashba effect at the interfaces provides an efficient way to switch the magnetization. In the meantime, current induced SOT has also been used to switch the in-plane magnetization in single layers such as ferromagnetic semiconductor (Ga,Mn)As and antiferromagnetic metal CuMnAs with globally or locally broken inversion symmetry. Here we demonstrate the current induced perpendicular magnetization switching in L10 FePt single layer. The current induced spin-orbit effective fields in L10 FePt increase with the chemical ordering parameter (S). In 20 nm FePt films with high S, we observe a large charge-to-spin conversion efficiency and a switching current density as low as 7.0E6 A/cm2. We anticipate our findings may stimulate the exploration of the spin-orbit torques in bulk perpendicular magnetic anisotropic materials and the application of high-efficient perpendicular magnetization switching in single FM layer.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Current driven domain wall creation in ferromagnetic nano-wires

We predict the electrical generation and injection of domain walls into a ferromagnetic nano-wire without the need of an assisting magnetic field. Our theory shows that above a critical current $j_{c}$ domain walls are injected into the nano-wire with a period $T\sim (j-j_{c})^{-1/2}$. In a uniaxial anisotropy geometry this process does not require Dzyaloshinskii-Moria or dipole-dipole interaction and can be done in a simple exchange ferromagnet. We also show that this process and the period exponents are universal and do not depend on the peculiarities of the microscopic Hamiltonian.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Current-driven periodic domain wall creation in ferromagnetic nano-wires

We predict the electrical generation and injection of domain walls into a ferromagnetic nano-wire without the need of an assisting magnetic field. Our analytical and numerical results show that above a critical current $j_{c}$ domain walls are injected into the nano-wire with a period $T \sim (j-j_{c})^{-1/2}$. Importantly, domain walls can be produced periodically even in a simple exchange ferromagnet with uniaxial anisotropy, without requiring any standard "twisting" interaction like Dzyaloshinskii-Moriya or dipole-dipole interactions. We show analytically that this process and the period exponents are universal and do not depend on the peculiarities of the microscopic Hamiltonian. Finally we give a specific proposal for an experimental realization.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electric voltage generation by antiferromagnetic dynamics

We theoretically demonstrate dc and ac electric voltage generation due to spinmotive forces originating from domain wall motion and magnetic resonance, respectively, in two-sublattice antiferromagnets. Our theory accounts for the canting between the sublattice magnetizations, the nonadiabatic electron spin dynamics, and the Rashba spin-orbit coupling, with the inter-sublattice electron dynamics treated as a perturbation. This work suggests a new way to observe and explore the dynamics of antiferromagnetic textures by electrical means, an important aspect in the emerging field of antiferromagnetic spintronics, where both manipulation and detection of antiferromagnets are needed.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Manipulating antiferromagnets with magnetic fields: ratchet motion of multiple domain walls induced by asymmetric field pulses

Future applications of antiferromagnets (AFs) in many spintronics devices rely on the precise manipulation of domain walls. The conventional approach using static magnetic fields is inefficient due to the low susceptibility of AFs. Recently proposed electrical manipulation with spin-orbit torques is restricted to metals with a specific crystal structure. Here we propose an alternative, broadly applicable approach: using asymmetric magnetic field pulses to induce controlled ratchet motion of AF domain walls. The efficiency of this approach is based on three peculiarities of AF dynamics. First, a time-dependent magnetic field couples with an AF order parameter stronger than a static magnetic field, which leads to higher mobility of the domain walls. Second, the rate of change of the magnetic field couples with the spatial variation of the AF order parameter inside the domain and this enables synchronous motion of multiple domain walls with the same structure. Third, tailored asymmetric field pulses in combination with static friction can prevent backward motion of domain walls and thus lead to the desired controlled ratchet effect. The proposed use of an external field, rather than internal spin-orbit torques, avoids any restrictions on size, conductivity, and crystal structure of the AF material. We believe that our approach paves a way for the development of new AF-based devices based on controlled motion of AF domain walls.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin-transfer torques in antiferromagnets: efficiency and quantification method

We formulate a theory of spin-transfer torques in antiferromagnets, which covers the small to large limits of the exchange coupling energy relative to the kinetic energy of the inter-sublattice electron dynamics. Our theory suggests a natural definition of the efficiency of spin-transfer torques in antiferromagnets in terms of well-defined material parameters, revealing that the charge current couples predominantly to the antiferromagnetic order parameter and the sublattice-canting moment in, respectively, the limits of large and small exchange coupling. The effects can be quantified by analyzing the antiferromagnetic spin-wave dispersions in the presence of charge current: in the limit of large exchange coupling the spin-wave Doppler shift always occurs, whereas, in the opposite limit, the only spin-wave modes to react to the charge current are ones that carry a pronounced sublattice-canting moment. The findings offer a framework for understanding and designing spin-transfer torques in antiferromagnets belonging to different classes of sublattice structures such as, e.g., bipartite and layered antiferromagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Disorder and localization effects on the local spectroscopic and infrared-optical properties of $\mbox{Ga}_{1-x}\mbox{Mn}_x\mbox{As}$

We study numerically the influence of disorder and localization effects on the local spectroscopic characteristics and infrared optical properties of $\mbox{Ga}_{1-x}\mbox{Mn}_x\mbox{As}$. We treat the band structure and disorder effects at an equal level by using exact diagonalization supercell simulation method. This method accurately describes the low doping limit and gives a clear picture of the transition to higher dopings, which captures the localization effects inaccessible to other theoretical methods commonly used. Our simulations capture the rich mid-gap localized states observed in scanning tunneling microscopy studies and reproduce the observed features of the infrared optical absorption experiments. We show clear evidence of a disordered valence band model for metallic samples in which (i) there is no impurity band detached from the valence band, (ii) the disorder tends to localize and pull states near the top of the valence band into the gap region, and (iii) the Fermi energy is located deep in the delocalized region away from the mobility edge. We identify localized states deep in the gap region by visualizing the probability distribution of the quasiparticles and connecting it to their respective participation ratios. The analysis of the infrared-optical absorption data indicates that it does not have a direct relation to the nature of the states at the Fermi energy.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Intraband and interband spin-orbit torques in non-centrosymmetric ferromagnets

Intraband and interband contributions to the current-driven spin-orbit torque in magnetic materials lacking inversion symmetry are theoretically studied using Kubo formula. In addition to the current-driven field-like torque ${\bf T}_{\rm FL}= τ_{\rm FL}{\bf m}\times{\bf u}_{\rm so}$ (${\bf u}_{\rm so}$ being a unit vector determined by the symmetry of the spin-orbit coupling), we explore the intrinsic contribution arising from impurity-independent interband transitions and producing an anti-damping-like torque of the form ${\bf T}_{\rm DL}= τ_{\rm DL}{\bf m}\times({\bf u}_{\rm so}\times{\bf m})$. Analytical expressions are obtained in the model case of a magnetic Rashba two-dimensional electron gas, while numerical calculations have been performed on a dilute magnetic semiconductor (Ga,Mn)As modeled by the Kohn-Luttinger Hamiltonian exchanged coupled to the Mn moments. Parametric dependences of the different torque components and similarities to the analytical results of the Rashba two-dimensional electron gas in the weak disorder limit are described.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Minimal Model of Spin-Transfer Torque and Spin Pumping caused by Spin Hall Effect

In the normal metal/ferromagnetic insulator bilayer (such as Pt/Y$_{3}$Fe$_{5}$O$_{12}$) and the normal metal/ferromagnetic metal/oxide trilayer (such as Pt/Co/AlO$_{x}$) where spin injection and ejection are achieved by the spin Hall effect in the normal metal, we propose a minimal model based on quantum tunneling of spins to explain the spin-transfer torque and spin pumping caused by the spin Hall effect. The ratio of their damping-like to field-like component depends on the tunneling wave function that is strongly influenced by generic material properties such as interface $s-d$ coupling, insulating gap, and layer thickness, yet the spin relaxation plays a minor role. The quantified result renders our minimal model an inexpensive tool for searching for appropriate materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Thermodynamic Magnon Recoil for Domain Wall Motion

We predict a thermodynamic magnon recoil effect for domain wall motions in the presence of temperature gradients. All current thermodynamic theories assert that a magnetic domain wall must move toward the hotter side, based on equilibrium thermodynamic arguments. Microscopic calculations on the other hand show that a domain wall can move either along or against the direction of heat currents, depending on how strong the heat currents are reflected by the domain wall. We have resolved the inconsistency between these two approaches by augmenting the theory in the presence of thermal gradients by incorporating in the free energy of domain walls by a heat current term present in nonequilibrium steady states. The condition to observe a domain wall propagation toward the colder regime is derived analytically and can be tested by future experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Very large magnetoresistance in Fe$_{0.28}$TaS$_{2}$ single crystals

Magnetic moments intercalated into layered transition metal dichalcogenides are an excellent system for investigating the rich physics associated with magnetic ordering in a strongly anisotropic, strong spin-orbit coupling environment. We examine electronic transport and magnetization in Fe$_{0.28}$TaS$_{2}$, a highly anisotropic ferromagnet with a Curie temperature $T_{\mathrm{C}} \sim 68.8~$K. We find anomalous Hall data confirming a dominance of spin-orbit coupling in the magnetotransport properties of this material, and a remarkably large field-perpendicular-to-plane MR exceeding 60% at 2 K, much larger than the typical MR for bulk metals, and comparable to state-of-the-art GMR in thin film heterostructures, and smaller only than CMR in Mn perovskites or high mobility semiconductors. Even within the Fe$_x$TaS$_2$ series, for the current $x$ = 0.28 single crystals the MR is nearly $100\times$ higher than that found previously in the commensurate compound Fe$_{0.25}$TaS$_{2}$. After considering alternatives, we argue that the large MR arises from spin disorder scattering in the strong spin-orbit coupling environment, and suggest that this can be a design principle for materials with large MR.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A stable path to ferromagnetic hydrogenated graphene growth

In this paper, we propose a practical way to stabilize half-hydrogenated graphene (graphone). We show that the dipole moments induced by an hexagonal-boron nitride (h-BN) substrate on graphene stabilize the hydrogen atoms on one sublattice of the graphene layer and suppress the migration of the absorbed hydrogen atoms. Based upon first principle spin polarized density of states (DOS) calculations, we show that the half hydrogenated graphene (graphone) obtained in different graphene-h-BN heterostructures exhibits a half metallic state. We propose to use this new exotic material for spin valve and other spintronics devices and applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction

We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in CoPt|MgO|CoPt as well. We find that the magneto-Seebeck ratio of CoPt|MgO|Pt exceeds that of CoPt|MgO|CoPt for small barrier thicknesses, reaching 175% at room temperature. This result provides a sharp contrast to the magnetoresistance, which behaves oppositely for all barrier thicknesses and differs by one order of magnitude between devices. Here the magnetoresistance results from differences in transmission brought upon by changing the tunnel junction's magnetization configuration. The magneto-Seebeck effect results from variations in asymmetry of the energy-dependent transmission instead. We report that this difference in origin allows for CoPt|MgO|Pt to possess strong thermal magnetic-transport anisotropy.

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preprint2014arXiv

Spin Hall effect

Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Although first observed only a decade ago, these effects are already ubiquitous within spintronics as standard spin-current generators and detectors. Here we review the experimental and theoretical results that have established this sub-field of spintronics. We focus on the results that have converged to give us a clear understanding of the phenomena and how they have evolved from a qualitative to a more quantitative measurement of spin-currents and their associated spin-accumulation. Within the experimental framework, we review optical, transport, and magnetization-dynamics based measurements and link them to both phenomenological and microscopic theories of the effect. Within the theoretical framework, we review the basic mechanisms in both the extrinsic and intrinsic regime which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. We also review the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin-generation which has proven important in the measurements of the spin Hall angle. We further connect the spin-current generating spin Hall effect to the inverse spin galvanic effect, which often accompanies the SHE, in which an electrical current induces a non-equilibrium spin polarization. These effects share common microscopic origins and can exhibit similar symmetries when present in ferromagnetic/non-magnetic structures through their induced current-driven spin torques. Although we give a short chronological overview, the main body is structured from a pedagogical point of view, focusing on well-established and accepted physics.

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preprint2013arXiv

Observation of a Berry phase anti-damping spin-orbit torque

Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-damping spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative interpretation combines the relativistic spin Hall effect (SHE), making the normal-conductor an injector of a spin-current, with the non-relativistic spin-transfer torque (STT) in the ferromagnet. Remarkably, the SHE in these experiments originates from the Berry phase effect in the band structure of a clean crystal and the anti-damping STT is also based on a disorder-independent transfer of spin from carriers to magnetization. Here we report the observation of an anti-damping SOT stemming from an analogous Berry phase effect to the SHE. The SOT alone can therefore induce magnetization dynamics based on a scattering-independent principle. The ferromagnetic semiconductor (Ga,Mn)As we use has a broken space-inversion symmetry in the crystal. This allows us to consider a bare ferromagnetic element which eliminates by design any SHE related contribution to the spin torque. We provide an intuitive picture of the Berry phase origin of the anti-damping SOT and a microscopic modeling of measured data.

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preprint2013arXiv

Phenomenology of current-skyrmion interactions in thin films with perpendicular magnetic anisotropy

We study skyrmions in magnetic thin films with structural inversion asymmetry perpendicular to the film plane. We determine the magnetization texture of a single skyrmion and its dependence on the strength of the Dzyaloshinskii-Moriya interaction relative to the magnetostatic energy. Furthermore, we construct a phenomenological model that describes the interaction between the motion of skyrmions and electric currents to lowest order in spin-orbit coupling. We estimate the experimental verifiable velocities for current-driven motion of skyrmion textures based on available results obtained from domain walls dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Reading charge transport from spin dynamics on the surface of topological insulator

Resolving the conductance of the topological surface states (TSSs) from the bulk contribution has been a great challenge for studying the transport property of topological insulators. By developing a non-purturbative diffusion equation that describes fully the spin-charge dynamics in the strong spin-orbit coupling regime, we present a proposal to read the charge transport information of TSSs from its spin dynamics which can be isolated from the bulk contribution by time-resolved second harmonic generation pump-probe measurement. We demonstrate the qualitatively different Dyaknov-Perel spin relaxation behavior between the TSSs and the two-dimensional spin-orbit coupling electron gas. The decay time of both in-plane and out-of-plane spin polarization is naturally proved to be identical to the charge transport time. The out-of-plane spin dynamics is shown to be in the experimentally reachable regime of the femtosecond pump probe spectroscopy and thereby we suggest experiments to detect the charge transport property of the TSSs from their unique spin dynamics.

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preprint2013arXiv

Unified theory of spin-dynamics in a two dimensional electron gases with arbitrary spin-orbit coping strength at finite temperature

We study the spin dynamics in the presence of impurity and electron-electron (e-e) scattering in a III-V semiconductor quantum well with arbitrary spin-orbit coupling (SOC) strength and symmetry at finite temperature. We derive the coupled spin-charge dynamic equations in the presence of inelastic scattering and provide a new formalism that describes the spin relaxation and dynamics in both the weak and the strong SOC regime in a unified way. In the weak SOC regime, as expected, our theory reproduces all previous zero-temperature results, most of which have focused on impurity-scattering induced spin-charge dynamics. In the regime where the strength of the Rashba and linear Dresselhaus SOC match, known as the SU(2) symmetry point, experiments have observed the spin-helix mode with a large spin-lifetime whose unexplained non-monotonic temperature dependence peaks at around 75 K. As a key test of our theory, we are able to naturally explain quantitatively this non-monotonic dependence and show that it arises as a competition between the Dyakonov-Perel mechanism, suppressed at the SU(2) point, and the Elliott-Yafet mechanism. In the strong SOC regime, we show that our theory directly reproduces the only previous known analytical result at the SU(2) symmetry point in the ballistic regime. It also explains, as we have shown previously, the rise of damped oscillating dynamics when the electron scattering time is larger than half of the spin precession time due to the SOC. Hence, we provide a unified theory of the spin-dynamics in two dimensional electron gases in the full phase diagram experimentally accessible.

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preprint2012arXiv

Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As

(Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducting doping trends and micromagnetic parameters. In this paper we establish these basic material characteristics by individually optimizing the highly non-equilibrium synthesis for each Mn-doping level and by simultaneously determining all micromagnetic parameters from one set of magneto-optical pump-and-probe measurements. Our (Ga,Mn)As thin-film epilayers, spannig the wide range of accessible dopings, have sharp thermodynamic Curie point singularities typical of uniform magnetic systems. The materials show systematic trends of increasing magnetization, carrier density, and Curie temperature (reaching 188 K) with increasing doping, and monotonous doping dependence of the Gilbert damping constant of ~0.1-0.01 and the spin stiffness of ~2-3 meVnm^2. These results render (Ga,Mn)As well controlled degenerate semiconductor with basic magnetic characteristics comparable to common band ferromagnets.

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preprint2012arXiv

Spin Hall transistor with electrical spin injection

The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor channel. The inverse spin Hall effect (iSHE) detection of spins injected optically in a 2D GaAs and manipulated by a gate-voltage dependent internal spin-orbit field has recently led to the experimental demonstration of a spin transistor logic device. The aim of the work presented here is to demonstrate in one device the iSHE detection combined with an electrical spin injection and manipulation. We use a 3D GaAs channel for which efficient electrical spin injection from Fe Schottky contacts has been demonstrated in previous works. In order to experimentally separate the strong ordinary Hall effect signal from the iSHE in the semiconductor channel we developed epitaxial ultrathin-Fe/GaAs contacts allowing for Hanle spin-precession measurements in applied in-plane magnetic fields. Electrical injection and detection is combined in our transistor structure with electrically manipulated spin distribution and spin current which, unlike the previously utilized electrical manipulations of the spin-orbit field or ballistic spin transit time, is well suited for the diffusive 3D GaAs spin channel. The magnitudes and external field dependencies of the measured signals are quantitatively analyzed using simultaneous spin detection by the non-local spin valve effect and modeled by solving the drift-diffusion and Hall-cross response equations for the parameters of the studied microstructure.

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preprint2011arXiv

Ab Initio Theory of Scattering-Independent Anomalous Hall Effect

We report on first-principles calculations of the side-jump contribution to the anomalous Hall conductivity (AHC) directly from the electronic structure of a perfect crystal. We implemented our approach for a short-range scattering disorder model within the density functional theory and computed the full scattering-independent AHC in elemental bcc Fe, hcp Co, fcc Ni, and L1o FePd and FePt alloys. The full AHC thus calculated agrees systematically with experiment to a degree unattainable so far, correctly capturing the previously missing elements of side-jump contributions, hence paving the way to a truly predictive theory of the anomalous Hall effect and turning it from a characterization tool to a probing tool of multi-band complex electronic band structures.

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preprint2011arXiv

Holey topological thermoelectrics

We study the thermoelectric properties of three-dimensional topological insulators with many holes (or pores) in the bulk. We show that at high density of these holes the thermoelectric figure of merit ZT can be large due to the contribution of the conducting surfaces and the suppressed phonon thermal conductivity. The maximum efficiency can be tuned by an induced gap in the surface states dispersion through tunneling or external magnetic fields. The large values of ZT, much higher than unity for reasonable parameters, make this system a strong candidate for applications in heat management of nanodevices, especially at low temperatures.

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preprint2011arXiv

Spin dynamics in the strong spin-orbit coupling regime

We study the spin dynamics in a high-mobility two dimensional electron gas (2DEG) with generic spin-orbit interactions (SOIs). We derive a set of spin dynamic equations which capture the purely exponential to the damped oscillatory spin evolution modes observed in different regimes of SOI strength. Hence we provide a full treatment of the D'yakonov-Perel's mechanism by using the microscopic linear response theory from the weak to the strong SOI limit. We show that the damped oscillatory modes appear when the electron scattering time is larger than half of the spin precession time due to the SOI, in agreement with recent observations. We propose a new way to measure the scattering time and the relative strength of Rashba and linear Dresselhaus SOIs based on these modes and optical grating experiments. We discuss the physical interpretation of each of these modes in the context of Rabi oscillation.

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preprint2011arXiv

The Scaling of the Anomalous Hall Effect in the Insulating Regime

We develop a theoretical approach to study the scaling of anomalous Hall effect (AHE) in the insulating regime, which is observed to be $σ_{xy}^{AH}\proptoσ_{xx}^{1.40\sim1.75}$ in experiments over a large range of materials. This scaling is qualitatively different from the ones observed in metals. Basing our theory on the phonon-assisted hopping mechanism and percolation theory, we derive a general formula for the anomalous Hall conductivity, and show that it scales with the longitudinal conductivity as $σ_{xy}^{AH}\simσ_{xx}^γ$ with $γ$ predicted to be $1.38\leqγ\leq1.76$, quantitatively in agreement with the experimental observations. Our result provides a clearer understanding of the AHE in the insulating regime and completes the scaling phase diagram of the AHE.

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preprint2011arXiv

Thermoelectric efficiency of topological insulators in a magnetic field

We study the thermoelectric properties of three-dimensional topological insulators in magnetic fields with many holes (or pores) in the bulk. We find that at high density of these holes in the transport direction the thermoelectric figure of merit, ZT, can be large due to the contribution of the topologically protected conducting surfaces and the suppressed phonon thermal conductivity. By applying an external magnetic field a subgap can be induced in the surface states spectrum. We show that the thermoelectric efficiency can be controlled by this tunable subgap leading to the values of ZT much greater than 1. Such high values of ZT for reasonable system parameters and its tunability by magnetic field make this system a strong candidate for applications in heat management of nanodevices, especially at low temperatures.

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preprint2010arXiv

Anomalous Hall Effect in Disordered Multiband Metals

We present a microscopic theory of the anomalous Hall effect in metallic multi-band ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and the so-called side jump. For a model of Gaussian disorder, the anomalous Hall effect is expressed solely in terms of the electronic band structure of the host material. Our theory handles systematically the interband-scattering coherence effects. We demonstrate the method in the two-dimensional Rashba and three-dimensional ferromagnetic (III,Mn)V semiconductor models. Our formalism is directly amenable to ab initio treatments for a wide range of ferromagnetic metals.

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preprint2010arXiv

Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of states near the Fermi energy which reside in an exchange-split sp-d hybridized valence band with dominant orbital character of the host semiconductor; this microscopic spectral character is consistent with the physical premise of the k.p kinetic-exchange model. On the other hand, the various models with a band structure comprising an impurity band detached from the valence band assume mutually incompatible microscopic spectral character. By adapting the tight-binding Anderson calculations individually to each of the impurity band pictures in the single Mn impurity limit and then by exploring the entire doping range we find that a detached impurity band does not persist in any of these models in ferromagnetic (Ga,Mn)As.

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preprint2010arXiv

Modeling of diffusion of injected electron spins in spin-orbit coupled microchannels

We report on a theoretical study of spin dynamics of an ensemble of spin-polarized electrons injected in a diffusive microchannel with linear Rashba and Dresselhaus spin-orbit coupling. We explore the dependence of the spin-precession and spin-diffusion lengths on the strengths of spin-orbit interaction and external magnetic fields, microchannel width, and orientation. Our results are based on numerical Monte Carlo simulations and on approximate analytical formulas, both treating the spin dynamics quantum-mechanically. We conclude that spin-diffusion lengths comparable or larger than the precession-length occur i) in the vicinity of the persistent spin helix regime for arbitrary channel width, and ii) in channels of similar or smaller width than the precession length, independent of the ratio of Rashba and Dresselhaus fields. For similar strengths of the Rashba and Dresselhaus fields, the steady-state spin-density oscillates or remains constant along the channel for channels parallel to the in-plane diagonal crystal directions. An oscillatory spin-polarization pattern tilted by 45$^{\circ}$ with respect to the channel axis is predicted for channels along the main cubic crystal directions. For typical experimental system parameters, magnetic fields of the order of Tesla are required to affect the spin-diffusion and spin-precession lengths.

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preprint2010arXiv

Plasmon mass and Drude weight in strongly spin-orbit-coupled 2D electron gases

Spin-orbit-coupled two-dimensional electron gases (2DEGs) are a textbook example of helical Fermi liquids, i.e. quantum liquids in which spin (or pseudospin) and momentum degrees-of-freedom at the Fermi surface have a well-defined correlation. Here we study the long-wavelength plasmon dispersion and the Drude weight of archetypical spin-orbit-coupled 2DEGs. We first show that these measurable quantities are sensitive to electron-electron interactions due to broken Galileian invariance and then discuss in detail why the popular random phase approximation is not capable of describing the collective dynamics of these systems even at very long wavelengths. This work is focussed on presenting approximate microscopic calculations of these quantities based on the minimal theoretical scheme that captures the basic physics correctly, i.e. the time-dependent Hartree-Fock approximation. We find that interactions enhance the "plasmon mass" and suppress the Drude weight. Our findings can be tested by inelastic light scattering, electron energy loss, and far-infrared optical-absorption measurements.

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preprint2010arXiv

Quantum Anomalous Hall Effect with Cold Atoms Trapped in a Square Lattice

We propose an experimental scheme to realize and detect the quantum anomalous Hall effect in an anisotropic square optical lattice which can be generated from available experimental set-ups of double-well lattices with minor modifications. A periodic gauge potential induced by atom-light interaction is introduced to give a Peierls phase for the nearest-neighbor site hopping. The quantized anomalous Hall conductivity is investigated by calculating the Chern number as well as the chiral gapless edge states of our system. Furthermore, we show in detail the feasability for its experimental detection through light Bragg scattering of the edge and bulk states with which one can determine the topological phase transition from usual insulating phase to quantum anomalous Hall phase.

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preprint2010arXiv

Spin Hall effect transistor

Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to realize an all-semiconductor spin Hall effect transistor. Our scheme circumvents semiconductor-ferromagnet interface problems of the original Datta-Das spin transistor concept and demonstrates the utility of the spin Hall effects in microelectronics. The devices use diffusive transport and operate without electrical current, i.e., without Joule heating in the active part of the transistor. We demonstrate a spin AND logic function in a semiconductor channel with two gates. Our experimental study is complemented by numerical Monte Carlo simulations of spin-diffusion through the transistor channel.

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preprint2010arXiv

Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As

We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga dopings. The growth and post-growth annealing procedures were optimized for each nominal Mn doping in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption spectra whose position exhibits a prevailing blue-shift for increasing Mn-doping. In the visible range, a peak in the magnetic circular dichroism blue shifts with increasing Mn-doping. These observed trends confirm that disorder-broadened valence band states provide a better one-particle representation for the electronic structure of high-doped (Ga,Mn)As with metallic conduction than an energy spectrum assuming the Fermi level pinned in a narrow impurity band.

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preprint2010arXiv

Thermoelectric transport of perfectly conducting channels in two- and three-dimensional topological insulators

Topological insulators have gapless edge/surface states with novel transport properties. Among these, there are two classes of perfectly conducting channels which are free from backscattering: the edge states of two-dimensional topological insulators and the one-dimensional states localized on dislocations of certain three-dimensional topological insulators. We show how these novel states affect thermoelectric properties of the systems and discuss possibilities to improve the thermoelectric figure of merit using these materials with perfectly conducting channels.

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preprint2009arXiv

Anomalous Hall effect

We present a review of experimental and theoretical studies of the anomalous Hall effect (AHE), focusing on recent developments that have provided a more complete framework for understanding this subtle phenomenon and have, in many instances, replaced controversy by clarity. Synergy between experimental and theoretical work, both playing a crucial role, has been at the heart of these advances. On the theoretical front, the adoption of Berry-phase concepts has established a link between the AHE and the topological nature of the Hall currents which originate from spin-orbit coupling. On the experimental front, new experimental studies of the AHE in transition metals, transition-metal oxides, spinels, pyrochlores, and metallic dilute magnetic semiconductors, have more clearly established systematic trends. These two developments in concert with first-principles electronic structure calculations, strongly favor the dominance of an intrinsic Berry-phase-related AHE mechanism in metallic ferromagnets with moderate conductivity. The intrinsic AHE can be expressed in terms of Berry-phase curvatures and it is therefore an intrinsic quantum mechanical property of a perfect cyrstal. An extrinsic mechanism, skew scattering from disorder, tends to dominate the AHE in highly conductive ferromagnets. We review the full modern semiclassical treatment of the AHE together with the more rigorous quantum-mechanical treatments based on the Kubo and Keldysh formalisms, taking into account multiband effects, and demonstrate the equivalence of all three linear response theories in the metallic regime. Finally we discuss outstanding issues and avenues for future investigation.

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preprint2009arXiv

Control of Josephson current by Aharonov-Casher Phase in a Rashba Ring

We study the interference effect induced by the Aharonov-Casher phase on the Josephson current through a semiconducting ring attached to superconducting leads. Using a 1D model that incorporates spin-orbit coupling in the semiconducting ring, we calculate the Andreev levels analytically and numerically, and predict oscillations of the Josephson current due to the AC phase. This result is valid from the point contact limit to the long channel length limit, as defined by the ratio of the junction length and the BCS healing length. We show in the long channel length limit that the impurity scattering has no effect on the oscillation of the Josephson current, in contrast to the case of conductivity oscillations in a spin-orbit coupled ring system attached to normal leads where impurity scattering reduces the amplitude of oscillations. Our results suggest a new scheme to measure the AC phase with, in principle, higher sensitivity. In addition, this effect allows for control of the Josephson current through the gate voltage tuned AC phase.

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preprint2009arXiv

Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy

We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. The infrared magneto-optical effects we study arise directly from the spin-splitting of the carrier bands and their chiral asymmetry due to spin-orbit coupling. Unlike the unpolarized absorption, they are intimately related to ferromagnetism and their interpretation is much more microscopically constrained in terms of the orbital character of the relevant band states. We show that the conventional theory of the disordered valence band with dominant As p-orbital character and coupled by kinetic-exchange to Mn local moments accounts semi-quantitatively for the overall characteristics of the measured infrared magneto-optical spectra.

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preprint2008arXiv

Aharonov-Casher and spin Hall effects in two-dimensional mesoscopic ring structures with strong spin-orbit interaction

We study the quantum interference effects induced by the Aharonov-Casher phase in asymmetrically confined two-dimensional electron and heavy-hole ring structures systems taking into account the electrically tunable spin-orbit (SO) interaction. We have calculated the non-adiabatic transport properties of charges (heavy-holes and electrons) in two-probe thin ring structures and compare how the form of the SO coupling of the carries affects it. We show that both the SO splitting of the bands and the carrier density can be used to modulate the conductance through the ring. We show that the dependence on carrier density is due to the backscattering from the leads which shows pronounce resonances when the Fermi energy is close to the eigenenergy of the ring. We also calculate the spin Hall conductivity and longitudinal conductivity in four-probe rings as a function of the carrier density and SO interaction, demonstrating that for heavy-hole carriers both conductivities are larger than for electrons. Finally, we investigate the transport properties of mesoscopic rings with spatially inhomogeneous SO coupling. We show that devices with inhomogeneous SO interaction exhibit an electrically controlled spin-flipping mechanism.

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preprint2008arXiv

Spin-injection Hall effect in a planar photovoltaic cell

Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers as they propagate along the semiconducting channel. In this paper we report the observation of a spin-injection Hall effect (SIHE) which exploits the quantum-relativistic nature of spin-charge transport and which meets all these key requirements on the spin detection. The two-dimensional electron-hole gas photo-voltaic cell we designed to observe the SIHE allows us to develop a quantitative microscopic theory of the phenomenon and to demonstrate its direct application in optoelectronics. We report an experimental realization of a non-magnetic spin-photovoltaic effect via the SIHE, rendering our device an electrical polarimeter which directly converts the degree of circular polarization of light to a voltage signal.

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preprint2008arXiv

Superfluid Density in High-$T_c$ Superconductors: Enabled by Holes or Suppressed by Electrons?

The critical temperature of an underdoped cuprate superconductor is limited by its phase stiffness $ρ$. In this Letter we argue that the dependence of $ρ$ on doping $x$ should be understood as a consequence of deleterious competition with antiferromagnetism at large electron densities, rather than as evidence for pairing of holes in the $x =0$ Mott insulator state. Our proposal is based on the observation that the correlation energy of a d-wave superconductor increases in magnitude at finite pairing wavevector when antiferromagnetic fluctuations are strong.

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preprint2008arXiv

Theory of Weak Localization in Ferromagnetic (Ga,Mn)As

We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn concentrations above 1% quantum interference corrections lead to negative magnetoresistance, i.e. to weak localization (WL) rather than weak antilocalization (WAL). Our work highlights key qualitative differences between (Ga,Mn)As and previously studied toy model systems, and pinpoints the mechanism by which exchange splitting in the ferromagnetic state converts valence band WAL into WL. We comment on recent experimental studies and theoretical analyses of low-temperature magnetoresistance in (Ga,Mn)As which have been variously interpreted as implying both WL and WAL and as requiring an impurity-band interpretation of transport in metallic (Ga,Mn)As.

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preprint2007arXiv

Absence of skew scattering in two-dimensional systems: Testing the origins of the anomalous Hall effect

We study the anomalous Hall conductivity in spin-polarized, asymmetrically confined two-dimensional electron and hole systems, focusing on skew-scattering contributions to the transport. We find that the skew scattering, principally responsible for the extrinsic contribution to the anomalous Hall effect, vanishes for the two-dimensional electron system if both chiral Rashba subbands are partially occupied, and vanishes always for the two-dimensional hole gas studied here, regardless of the band filling. Our prediction can be tested with the proposed coplanar two-dimensional electron/hole gas device and can be used as a benchmark to understand the crossover from the intrisic to the extrinsic anomalous Hall effect.

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preprint2007arXiv

Aharonov-Casher effect in a two dimensional hole gas with spin-orbit interaction

We study the quantum interference effects induced by the Aharonov-Casher phase in a ring structure in a two-dimensional heavy hole (HH) system with spin-orbit interaction realizable in narrow asymmetric quantum wells. The influence of the spin-orbit interaction strength on the transport is investigated analytically. These analytical results allow us to explain the interference effects as a signature of the Aharonov-Casher Berry phases. Unlike previous studies on the electron two-dimensional Rashba systems, we find that the frequency of conductance modulations as a function of the spin-orbit strength is not constant but increases for larger spin-orbit splittings. In the limit of thin channel rings (width smaller than Fermi wavelength), we find that the spin-orbit splitting can be greatly increased due to quantization in the radial direction. We also study the influence of magnetic field considering both limits of small and large Zeeman splittings.

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preprint2005arXiv

Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system

We report the experimental observation of the spin-Hall effect in a two-dimensional (2D) hole system with Rashba spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed co-planar geometry which allows an angle-resolved polarization detection at opposite edges of the 2D hole system. In equilibrium the angular momenta of the Rashba split heavy hole states lie in the plane of the 2D layer. When an electric field is applied across the hole channel a non zero out-of-plane component of the angular momentum is detected whose sign depends on the sign of the electric field and is opposite for the two edges. Microscopic quantum transport calculations show only a weak effect of disorder suggesting that the clean limit spin-Hall conductance description (intrinsic spin-Hall effect) might apply to our system.

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preprint2002arXiv

Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As

We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn$^{2+}$ acceptors with a local moment $S=5/2$ and from non-magnetic compensating defects. In metallic samples Boltzmann transport theory with Golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. We predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineering or by altering chemical composition.

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preprint2002arXiv

Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors

We present a theoretical survey of ferromagnetic transition temperatures in cubic (III,Mn)V semiconductors based on a model with $S=5/2$ local moments exchange-coupled to itinerant holes in the host semiconductor valence band. Starting from the simplest mean-field theory of this model, we estimate the $T_c$ enhancement due to exchange and correlation in the itinerant-hole system, and the $T_c$ suppression due to collective fluctuations of the ordered moments. We show that high critical temperatures in these ferromagnetic semiconductors require both the large magnetic susceptibility contribution from the valence band's heavy holes and the large spin stiffness that results from strong spin-orbit coupling in the valence band. Our calculations demonstrate that this model for the ferromagnetism of these systems is fully consistent with the room-temperature ferromagnetism reported for Mn doped nitrides.

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preprint2002arXiv

Electron-Phonon Interactions in Polyacene Organic Transistors

We present a simple model for the electron-phonon interactions between the energy subbands in polyacene field-effect transistors and the vibrations of the crystal. We introduce a generalized Su-Schrieffer-Heeger model, arguing that the strongest electron-phonon interactions in these systems originate from the dependence of inter-molecule hopping amplitudes on collective molecular motion. We compute the electron-phonon spectral function $α^2F(ω)$ as a function of two-dimensional hole density and the coupling strength constant. Our results are in agreement with the sharp onset of superconductivity near half-filling discovered in recent experiments by Schön {\it et al.} [Batlogg] and predict an increase of $T_c$ with pressure. We further speculate on the implications that the observation of the quantum Hall effect in these systems has on the effective band mass in the low carrier density regime.

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