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A. W. Rushforth

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Published work

29 published item(s)

preprint2022arXiv

Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature

Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of these textures, which have gained significant attention because of their potential for terahertz dynamics, deflection free motion, and improved size scaling due to the absence of stray field. Here we show that topological spin textures, merons and antimerons, can be generated at room temperature and reversibly moved using electrical pulses in thin film CuMnAs, a semimetallic antiferromagnet that is a testbed system for spintronic applications. The electrical generation and manipulation of antiferromagnetic merons is a crucial step towards realizing the full potential of antiferromagnetic thin films as active components in high density, high speed magnetic memory devices.

preprint2022arXiv

Transition magnon modes in thin ferromagnetic nanogratings

This work presents micromagnetic simulations in ferromagnetic nanogratings for the full range of directions of an applied in-plane external magnetic field. We focus on the modification of the magnon mode characteristics when the magnetic field orientation is gradually changed between the classical Damon-Eshbach (DE) and backward-volume (BV) geometries. We found that in a specific range of field directions, the magnon mode parameters differ significantly from the parameters in the classical cases, namely, the modes are characterized by complex spatial distributions and have low group velocities. The center of this range corresponds to the direction of the external magnetic field, which gives the maximal nonuniform distribution of the static magnetization in the nanogratings.

preprint2017arXiv

Generation of a localized microwave magnetic field by coherent phonons in a ferromagnetic nanograting

A high-amplitude microwave magnetic field localized at the nanoscale is a desirable tool for various applications within the rapidly developing field of nanomagnetism. Here, we drive magnetization precession by coherent phonons in a metal ferromagnetic nanograting and generate ac-magnetic induction with extremely high amplitude (up to $10$ mT) and nanometer scale localization in the grating grooves. We trigger the magnetization by a laser pulse which excites localized surface acoustic waves. The developed technique has prospective uses in several areas of research and technology, including spatially resolved access to spin states for quantum technologies.

preprint2016arXiv

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromagnetic semiconductors while keeping the Mn concentration constant. We monitor the change of Curie temperature ($T_C$) and conductivity. For a broad range of samples including (Ga,Mn)As and (Ga,Mn)(As,P) with various Mn and P concentrations, we observe a smooth decrease of $T_C$ with carrier compensation over a wide temperature range while the conduction is changed from metallic to insulating. The existence of $T_C$ below 10\,K is also confirmed in heavily compensated samples. Our experimental results are naturally explained within the valence-band picture.

preprint2015arXiv

Modification of perpendicular magnetic anisotropy and domain wall velocity in Pt/Co/Pt by voltage-induced strain

The perpendicular magnetic anisotropy K$_e$$_f$$_f$, magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85-1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. K$_e$$_f$$_f$, measured by the extraordinary Hall effect, is reduced by 10 kJ/m$^3$ by tensile strain out-of-plane ε$_z$ = 9 x 10-4, independently of the film thickness, indicating a dominant volume contribution to the magnetostriction. The same strain reduces the coercive field by 2-4 Oe, and increases the domain wall velocity measured by wide-field Kerr microscopy by 30-100 %, with larger changes observed for thicker Co layers. We consider how strain-induced changes in the perpendicular magnetic anisotropy can modify the coercive field and domain wall velocity.

preprint2015arXiv

Resonant driving of magnetization precession in a ferromagnetic layer by coherent monochromatic phonons

We realize resonant driving of the magnetization precession by monochromatic phonons in a thin ferromagnetic layer embedded into a phononic Fabry-Perot resonator. A femtosecond laser pulse excites resonant phonon modes of the structure in the 10-40 GHz frequency range. By applying an external magnetic field, we tune the precession frequency relative to the frequency of the phonons localized in the cavity and observe the enormous increase in the amplitude of the magnetization precession when the frequencies of free magnetization precession and phonons localized in the cavity are equal.

preprint2014arXiv

Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As

We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data we determined the magnetic anisotropy fields, the spin stiffness and the Gilbert damping constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular to plane anisotropy field but also to an increase of the Gilbert damping and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We report that the magnetization precession damping is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode.

preprint2014arXiv

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that make (Ga,Mn)As a favorable test-bed system for spintronics research and discuss contributions of (Ga,Mn)As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat.

preprint2014arXiv

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Neél temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.

preprint2013arXiv

Anisotropic Current-Controlled Magnetization Reversal in the Ferromagnetic Semiconductor (Ga,Mn)As

Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Rashba induced magnetic field in our GaMnAs devices.

preprint2013arXiv

High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As

We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band.

preprint2013arXiv

Magnetostrictive thin films for microwave spintronics

Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of single crystal thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make the single crystal thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

preprint2013arXiv

Spin-orbit torque opposing the Oersted torque in ultrathin Co/Pt bilayers

Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven FMR technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, were analysed to determine the symmetries and relative magnitudes of the spin-orbit torques. Both anti-damping (Slonczewski) and field-like torques were observed. As the ferromagnet thickness was reduced from 3 to 1 nm, the sign of the field-like torque reversed. This observation is consistent with the emergence of a Rashba spin orbit torque in ultra-thin bilayers.

preprint2012arXiv

Correspondence on "Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band" by M. Dobrowolska et al

Comment on the recent Nature Materials article by M. Dobrowolska et al., arXiv:1203.1852. We present experimental data showing that the Curie temperature and conductivity of high quality (Ga,Mn)As samples are maximized at low compensation, and thus the magnetic order in (Ga,Mn)As is not consistent with the isolated impurity band scenario.

preprint2012arXiv

Enhanced Inverse Spin-Hall Effect in Ultrathin Ferromagnetic/Normal Metal Bilayers

We measure electrically detected ferromagnetic resonance in microdevices patterned from ultra-thin Co/Pt bilayers. Spin pumping and rectification voltages are observed and distinguished via their angular dependence. The spin-pumping voltage shows an unexpected increase as the cobalt thickness is reduced below 2 nm. This enhancement allows more efficient conversion of spin to charge current and motivates a theory modelling the dependence of impurity scattering on surface roughness.

preprint2012arXiv

Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe81Ga19 film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the modification of the magnetic anisotropy by mechanical strain induced by a piezoelectric transducer attached to the layer. Epitaxial Fe81Ga19 is shown to possess the favourable combination of cubic magnetic anisotropy and large magnetostriction necessary to achieve this functionality with experimentally accessible levels of strain. The switching of the magnetization proceeds by the motion of magnetic domain walls, also controlled by the voltage induced strain.

preprint2012arXiv

Piezoelectric strain induced variation of the magnetic anisotropy in a high Curie temperature (Ga,Mn)As sample

We show that effective electrical control of the magnetic properties in the ferromagnetic semiconductor (Ga,Mn)As is possible using the strain induced by a piezoelectric actuator even in the limit of high doping levels and high Curie temperatures, where direct electric gating is not possible. We demonstrate very large and reversible rotations of the magnetic easy axis. We compare the results obtained from magneto-transport and SQUID magnetometry measurements, extracting the dependence of the piezo-induced uniaxial magnetic anisotropy constant upon strain in both cases and detailing the limitations encountered in the latter approach.

preprint2011arXiv

Analysing surface structures on (Ga,Mn)As by Atomic Force Microscopy

Using atomic force microscopy, we have studied the surface structures of high quality molecular beam epitaxy grown (Ga,Mn)As compound. Several samples with different thickness and Mn concentration, as well as a few (Ga,Mn)(As,P) samples have been investigated. All these samples have shown the presence of periodic ripples aligned along the $[1\bar{1}0]$ direction. From a detailed Fourier analysis we have estimated the period (~50 nm) and the amplitude of these structures.

preprint2011arXiv

Origin of in-plane uniaxial magnetic anisotropy in CoFeB amorphous ferromagnetic thin-films

Describing the origin of uniaxial magnetic anisotropy (UMA) is generally problematic in systems other than single crystals. We demonstrate an in-plane UMA in amorphous CoFeB films on GaAs(001) which has the expected symmetry of the interface anisotropy in ferromagnetic films on GaAs(001), but strength which is independent of, rather than in inverse proportion to, the film thickness. We show that this volume UMA is consistent with a bond-orientational anisotropy, which propagates the interface-induced UMA through the thickness of the amorphous film. It is explained how, in general, this mechanism may describe the origin of in-plane UMAs in amorphous ferromagnetic films.

preprint2011arXiv

Surface morphology and magnetic anisotropy in (Ga,Mn)As

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

preprint2010arXiv

Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction.

preprint2010arXiv

Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.

preprint2010arXiv

Element-resolved orbital polarization in (III,Mn)As ferromagnetic semiconductors from $K$ edge x-ray magnetic circular dichroism

Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the As K absorption edge consists of a single peak located on the low-energy side of the edge, which increases with the concentration of ferromagnetic Mn moments. The XMCD at the Mn K edge is more detailed and is strongly concentration-dependent, which is interpreted as a signature of hole localization for low Mn doping. The results indicate a markedly different character of the polarized holes in low-doped insulating and high-doped metallic films, with a transfer of the hole orbital magnetic moment from Mn to As sites on crossing the metal-insulator transition.

preprint2010arXiv

Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal

We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange coupled (Ga,Mn)As interface layer in addition to the biassed bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.

preprint2010arXiv

Manipulation of electrical and ferromagnetic properties of photo-sensitized (Ga,Mn)As

We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering of the Curie temperature with a corresponding increase in electrical resistance and a higher coercive field is found for the GaMnAs/fluorescein system with respect to (Ga,Mn)As. Upon exposure to visible light a shift in Curie temperature towards higher values and a reduction of the coercive field can be achieved in photo-sensitized (Ga,Mn)As. A mayor change in the XPS spectrum of (Ga,Mn)As indicates the appearance of occupied levels in the energy range corresponding to the (Ga,Mn)As valence band states upon adsorption of fluorescein. This points towards a hole quenching effect at the molecule-(Ga,Mn)As interface which is susceptible to light exposure.

preprint2010arXiv

Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of states near the Fermi energy which reside in an exchange-split sp-d hybridized valence band with dominant orbital character of the host semiconductor; this microscopic spectral character is consistent with the physical premise of the k.p kinetic-exchange model. On the other hand, the various models with a band structure comprising an impurity band detached from the valence band assume mutually incompatible microscopic spectral character. By adapting the tight-binding Anderson calculations individually to each of the impurity band pictures in the single Mn impurity limit and then by exploring the entire doping range we find that a detached impurity band does not persist in any of these models in ferromagnetic (Ga,Mn)As.

preprint2010arXiv

Tailoring the magnetism of GaMnAs films by ion irradiation

Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated GaMnAs layers indicates that the controlled tailoring of magnetism results from a compensation of holes by generated electrical defects.

preprint2010arXiv

Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

We have investigated the effects of post growth low temperature annealing on the magnetic, electrical and structural properties of (Ga_0.94,Mn_0.06)(As_0.9,P_0.1) layers grown by molecular beam epitaxy. By controlling the annealing time we are able to tune the magnetic anisotropy between an easy axis in the plane for the as-grown samples, to an easy axis perpendicular to the plane for fully annealed samples. The increase of the carrier density, as a result of annealing, is found to be the primary reason for the change in magnetic anisotropy, in qualitative agreement with theoretical predictions.

preprint2006arXiv

AMR and magnetometry studies of ultra thin GaMnAs films

We have measured the Anisotropic Magnetoresistance (AMR) of ultra thin (5nm) Ga(0.95)Mn(0.05)As films. We find that the sign of the AMR can be positive or negative, which may depend on the direction of the current with respect to the crystal. At low temperatures, transport measurements and SQUID magnetometry suggest that the magnetisation has a component pointing out of the plane of the film.