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Researcher profile

O. A. Mironov

O. A. Mironov contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.str-el

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Published work

10 published item(s)

preprint2016arXiv

Fractional Quantum Hall States in a Ge Quantum Well

Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fraction $ν=5/2$. We analyse the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarised Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Hall field-induced resistance oscillations in Ge/SiGe quantum wells

We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hall field-induced resistance oscillations (HIRO) which are known to occur in 2D electron gases in GaAs/AlGaAs systems. After taking into account the Dingle factor correction, we find that the position of the HIRO peak is well described by the hole effective mass $m^\star \approx 0.09\,m_0$, obtained from microwave photoresistance in the same sample.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

In-plane magnetic field effect on hole cyclotron mass and $g_z$ factor in high-mobility SiGe/Ge/SiGe structures

The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt angle of the magnetic field with respect to the normal of the two-dimensional channel at $T$=0.3 K. It is shown, that at the minima of the conductivity oscillations, holes are localized on the Fermi level, and that there is a temperature domain in which the high-frequency conductivity in the bulk of the quantum well is of the activation nature. The analysis of the temperature dependence of the conductivity at odd filling factors enables us to determine the effective $g_z$ factor. It is shown that the in-plane component of the magnetic field leads to an increase of the cyclotron mass and to a reduction of the $g_z$ factor. We developed a microscopic theory of these effects for the heavy-hole states of the complex valence band in quantum wells which describes well the experimental findings.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Observation of microwave-induced resistance oscillations in strained Ge/SiGe quantum wells

Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields

The contactless Surface Acoustic Wave (SAW) technique was implemented to probe the high-frequency (ac) conductivity in a high-mobility $p$-SiGe/Ge/SiGe structure in the integer quantum Hall (IQHE) regime. The structure was grown by low-energy plasma-enhanced chemical vapor deposition and comprised a two-dimensional channel formed in a compressively strained Ge layer. It was investigated at temperatures of 0.3 - 5.8 K and magnetic fields up to 18 T at various SAW intensities. In the IQHE regime, in minima of the conductivity oscillations with small filling factors, holes are localized. The ac conductivity is of the hopping nature and can be described within the "two-site" model. Furthermore, the dependence of the ac conductivity on the electric field of the SAW was determined. The manifestation of non-linear effects is interpreted in terms of nonlinear percolation-based conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II

The magnetoresistance components $ρ_{xx}$ and $ρ_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$\times10^{11}$\,cm$^{-2}$. This transition is due to crossing of the 0$\uparrow$ and 1$\downarrow$ Landau levels. However, in another sample, with $p$=7.2$\times10^{10}$\,cm$^{-2}$, the 0$\uparrow$ and 1$\downarrow$ Landau levels coincide for angles $Θ$=0-70$^{\text{o}}$. Only for $Θ$ > 70$^{\text{o}}$ do the levels start to diverge which, in turn, results in the energy gap opening.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in $p$-Si/SiGe/Si Structures with an Anisotropic $g$ Factor

Magnetoresistivity $ρ_{xx}$ and $ρ_{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times $ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective $g$-factor on the angle of magnetic field tilt $θ$ to the normal to the plane of a two dimensional $p$-Si/SiGe/Si channel is determined. A first order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor $ν$ = 2 at $θ\approx $ 59$^\textrm{o}$-60$^\textrm{o}$.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure

Measurement results of the acoustoelectric effects (surface acoustic waves (SAW) attenuation and velocity) in a high-mobility $p$-SiGe/Ge/SiGe structure are presented. The structure was LEPECVD grown with a two dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5 - 4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time $τ_{\varepsilon}$ and the deformation potential constant determined.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field

We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-plane magnetic field $B_{\parallel}$ against the current $I$: $B_{\parallel} \perp I$ and $B_{\parallel} \parallel I$. In the sample with the lowest density in the magnetic field range of 0-7.2 T the temperature dependence of $ρ_{xx}$ demonstrates the metallic characteristics ($d ρ_{xx}/dT>$0). However, at $B_{\parallel}$ =7.2 T the derivative $d ρ_{xx}/dT$ reverses the sign. Moreover, the resistance depends on the current orientation with respect to the in-plane magnetic field. At $B_{\parallel} \cong$ 13 T there is a transition from the dependence $\ln(Δρ_{xx} / ρ_{0})\propto B_{\parallel}^2$ to the dependence $\ln(Δρ_{xx} / ρ_{0})\propto B_{\parallel}$. The observed effects can be explained by the influence of the in-plane magnetic field on the orbital motion of the charge carriers in the quasi-2D system.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Magnetoresistance in Dilute $p$-Si/SiGe in Parallel and Tilted Magnetic Fields

We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ and $ρ_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel plane. The large in-plane magnetoresistance can be explained by the influence of the \textit{in-plane} magnetic field on the orbital motion of the charge carriers in the quasi-2D system. The measurements of $ρ_{xx}$ and $ρ_{xy}$ in the tilted magnetic field showed that the anomaly in $ρ_{xx}$, observed at filling factor $ν$=3/2 is practically nonexistent in the conductivity $σ_{xx}$. The anomaly in $σ_{xx}$ at $ν$=2 might be explained by overlapping of the levels with different spins 0$\uparrow$ and 1$\downarrow$ when the tilt angle of the applied magnetic field is changed. The dependence of g-factor $g^*(Θ)/g^*(0^0)$ on the tilt angle $Θ$ was determined.

0 citations0 reviewsNo code linkedOpen access