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I. L. Drichko contributes to research discovery and scholarly infrastructure.
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Published work
Contactless acoustic methods were used to determine electrical parameters - electrical conductivity, carrier mobility and their concentration - in single-layer graphene deposited on the surface of lithium niobate.
The DC and AC conductivities of the n-GaAs/AlAs heterostructure with two filled size quantization levels are studied within a wide magnetic field range. The electron spectrum of such heterostructure is characterized by two subbands (symmetric $S$ and antisymmetric $AS$), separated by the band gap $Δ_{12}=15.5$ meV. It is shown that, in the linear regime at the applied magnetic field $B >3$ T, the system exhibits oscillations corresponding to the integer quantum Hall effect. A quite complicated pattern of such oscillations is well interpreted in terms of transitions between Landau levels related to different subbands. At $B <1$ T, magneto-intersubband resistance oscillations (MISOs) are observed. An increase in the conductivity with the electric current flowing across the sample or in the intensity of the surface acoustic wave (SAW) in the regime of the integer quantum Hall effect is determined by an increase in the electron gas temperature. In the case of intersubband transitions, it is found that nonlinearity cannot be explained by heating. At the same time, the decrease in the AC conductivity with increasing SAW electric field is independent of frequency, but the corresponding behavior does not coincide with that corresponding to the dependence of the DC conductivity on the Hall voltage $E_y$.
We have measured magnetic field dependences of the attenuation and velocity of surface acoustic waves in a high-mobility $n$-GaAs/AlGaAs structure with a wide quantum well. The results allowed us to find the complex conductance, $σ(ω)$, of the heterostructure for different frequencies, temperatures and magnetic fields near filling factors $ν=1, 2$. Observed behavior of $σ(ω)$ versus magnetic field outside close vicinities of integer fillings reveals an oscillation pattern indicative of the rich fractional quantum Hall effect. Our result is that in very close vicinities of integer filling factors the AC response of a high-mobility two-dimensional structures behaves as that of a two-dimensional system of localized electrons. Namely, both real and imaginary parts of the complex AC conductance at low temperatures agree with the predictions for the two-site model for a two-dimensional hopping system. Another result is the specific temperature dependences of $σ(ω)$, which are extremely sensitive to the filling factor value. These dependences indicate a sharp crossover between the localized modes and a pinned Wigner crystal.
High frequency (ac) conductivity in the single quantum well AlGaAs/GaAs/AlGaAs with high mobility was investigated by contactless acoustic methods in the fractional quantum Hall effect regime in perpendicular and tilted magnetic fields. We studied the dependence of ac conductivity $σ^{ac}=σ_1 - iσ_2$ on both the temperature and magnetic field tilt angle. Tilting the magnetic field relative to the sample surface enabled us to change the position of the conductivity oscillation minimum at $ν$=2/3. We measured the temperature dependence of ac conductivity for each tilt angle and for the 2/3 state we calculated the activation energy $ΔE$ which was derived by constructing the Arrhenius plot ln $σ_1$ against 1/$T$. Analyzing behavior of the activation energy in total magnetic field for the filling factor 2/3 we observed a distinct minimum which can be interpreted as the spin unpolarized-polarized phase transition.
By simultaneous measurements of the attenuation and velocity of surface acoustic waves propagating in proximity to a high-quality GaAs quantum well we study the complex AC conductance of the two-dimensional electron system. Focusing on the vicinity of the filling factor $ν=1/5$ we confirm that the insulating states formed closely to this value of $ν$ are pinned Wigner crystals.
We report a procedure to determine the frequency-dependent conductance of quantum Hall structures in a broad frequency domain. The procedure is based on the combination of two known probeless methods -- acoustic spectroscopy and microwave spectroscopy. By using the acoustic spectroscopy, we study the low-frequency attenuation and phase shift of a surface acoustic wave in a piezoelectric crystal in the vicinity of the electron (hole) layer. The electronic contribution is resolved using its dependence on a transverse magnetic field. At high frequencies, we study the attenuation of an electromagnetic wave in a coplanar waveguide. To quantitatively calibrate these data, we use the fact that in the quantum-Hall-effect regime the conductance at the maxima of its magnetic field dependence is determined by extended states. Therefore, it should be frequency independent in a broad frequency domain. The procedure is verified by studies of a well-characterized $p$-SiGe/Ge/SiGe heterostructure.
The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt angle of the magnetic field with respect to the normal of the two-dimensional channel at $T$=0.3 K. It is shown, that at the minima of the conductivity oscillations, holes are localized on the Fermi level, and that there is a temperature domain in which the high-frequency conductivity in the bulk of the quantum well is of the activation nature. The analysis of the temperature dependence of the conductivity at odd filling factors enables us to determine the effective $g_z$ factor. It is shown that the in-plane component of the magnetic field leads to an increase of the cyclotron mass and to a reduction of the $g_z$ factor. We developed a microscopic theory of these effects for the heavy-hole states of the complex valence band in quantum wells which describes well the experimental findings.
The contactless Surface Acoustic Wave (SAW) technique was implemented to probe the high-frequency (ac) conductivity in a high-mobility $p$-SiGe/Ge/SiGe structure in the integer quantum Hall (IQHE) regime. The structure was grown by low-energy plasma-enhanced chemical vapor deposition and comprised a two-dimensional channel formed in a compressively strained Ge layer. It was investigated at temperatures of 0.3 - 5.8 K and magnetic fields up to 18 T at various SAW intensities. In the IQHE regime, in minima of the conductivity oscillations with small filling factors, holes are localized. The ac conductivity is of the hopping nature and can be described within the "two-site" model. Furthermore, the dependence of the ac conductivity on the electric field of the SAW was determined. The manifestation of non-linear effects is interpreted in terms of nonlinear percolation-based conductivity.
The magnetoresistance components $ρ_{xx}$ and $ρ_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$\times10^{11}$\,cm$^{-2}$. This transition is due to crossing of the 0$\uparrow$ and 1$\downarrow$ Landau levels. However, in another sample, with $p$=7.2$\times10^{10}$\,cm$^{-2}$, the 0$\uparrow$ and 1$\downarrow$ Landau levels coincide for angles $Θ$=0-70$^{\text{o}}$. Only for $Θ$ > 70$^{\text{o}}$ do the levels start to diverge which, in turn, results in the energy gap opening.
Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a dense lattice of localized states leads us to the conclusion that the main mechanism of AC conduction in hopping systems with large localization length is due to the charge transfer within large clusters, while the main mechanism behind its non-Ohmic behavior is charge heating by absorbed power.
In case of a of the heterostructure n-GaAs/AlGaAs with sheet density $n=2 \times 10^{11}$cm$^{-2}$ and mobility $μ\approx 2 \times 10^6$ cm$^2$/V$\cdot$s with integer and fractional quantum Hall effect (IQHE and FQHE, respectively) we demonstrate the wide applicability of acoustic methods for determining the general conduction parameters of a two dimensional electron gas. We also examine the mechanisms of low-temperature conductivity in the minima of oscillations of high frequency conductivity in the IQHE and FQHE regimes. In the magnetic field region where electrons are delocalized, the parameters determined by the acoustic technique do not differ from those determined by a direct current. However, the acoustic measurements do not require Hall bars and electrical contacts to be fabricated. In the minima of IQHE and FQHE oscillations electrons are localized, and ac conductivity turns to be via hopping. An analysis of the high frequency conductivity in the QHE regime has been carried out within a "two site" model. Furthermore, measurements of acoustoelectric effects in a tilted magnetic field provided the dependence of the activation energy on magnetic field in the fractional quantum Hall effect regime at $ν$=2/3.
Magnetoresistivity $ρ_{xx}$ and $ρ_{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times $ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective $g$-factor on the angle of magnetic field tilt $θ$ to the normal to the plane of a two dimensional $p$-Si/SiGe/Si channel is determined. A first order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor $ν$ = 2 at $θ\approx $ 59$^\textrm{o}$-60$^\textrm{o}$.
Measurement results of the acoustoelectric effects (surface acoustic waves (SAW) attenuation and velocity) in a high-mobility $p$-SiGe/Ge/SiGe structure are presented. The structure was LEPECVD grown with a two dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5 - 4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time $τ_{\varepsilon}$ and the deformation potential constant determined.
We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-plane magnetic field $B_{\parallel}$ against the current $I$: $B_{\parallel} \perp I$ and $B_{\parallel} \parallel I$. In the sample with the lowest density in the magnetic field range of 0-7.2 T the temperature dependence of $ρ_{xx}$ demonstrates the metallic characteristics ($d ρ_{xx}/dT>$0). However, at $B_{\parallel}$ =7.2 T the derivative $d ρ_{xx}/dT$ reverses the sign. Moreover, the resistance depends on the current orientation with respect to the in-plane magnetic field. At $B_{\parallel} \cong$ 13 T there is a transition from the dependence $\ln(Δρ_{xx} / ρ_{0})\propto B_{\parallel}^2$ to the dependence $\ln(Δρ_{xx} / ρ_{0})\propto B_{\parallel}$. The observed effects can be explained by the influence of the in-plane magnetic field on the orbital motion of the charge carriers in the quasi-2D system.
We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ and $ρ_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel plane. The large in-plane magnetoresistance can be explained by the influence of the \textit{in-plane} magnetic field on the orbital motion of the charge carriers in the quasi-2D system. The measurements of $ρ_{xx}$ and $ρ_{xy}$ in the tilted magnetic field showed that the anomaly in $ρ_{xx}$, observed at filling factor $ν$=3/2 is practically nonexistent in the conductivity $σ_{xx}$. The anomaly in $σ_{xx}$ at $ν$=2 might be explained by overlapping of the levels with different spins 0$\uparrow$ and 1$\downarrow$ when the tilt angle of the applied magnetic field is changed. The dependence of g-factor $g^*(Θ)/g^*(0^0)$ on the tilt angle $Θ$ was determined.
High-frequency (HF) conductivity ($σ_{hf}$) measured by an acoustical method has been studied in GaAs/AlGaAs heterostructures in a linear and nonlinear regime on acoustic power. It has been shown that in the quantum Hall regime at magnetic fields corresponding to the middle of the Hall plateaus the HF conductivity is determined by the sum of the conductivity of 2-dimensional electrons in the high-mobility channel and the hopping conductivity of the electrons in the doped thick AlGaAs layer. The dependence of these conductivities on a temperature is analyzed. The width of the Landau level broadened by the impurity random potential is determined.
The parameters of two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure were determined by an acoustical (contactless) method in the delocalized electrons region ($B\le$2.5T). Nonlinear effects in Surface Acoustic Wave (SAW) absorption by 2DEG are determined by the electron heating in the electric field of SAW, which may be described in terms of electron temperature $T_e$. The energy relaxation time $τ_ε$ is determined by the scattering at piezoelectric potential of acoustic phonons with strong screening. At different SAW frequencies the heating depends on the relationship between $ωτ_ε$ and 1 and is determined either by the instantaneously changing wave field ($ωτ_ε$$<1$), or by the average wave power ($ωτ_ε$$>1$).