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Researcher profile

Nobuhiko Mitoma

Nobuhiko Mitoma contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

5 published item(s)

preprint2020arXiv

Gate-controlled photo-oxidation of graphene for electronic structure modification

Graphene is an ultrathin material, which allows us to control surface phenomena by means of field-effect gating. Among various surface phenomena, photo-oxidation is known to be a facile method to largely control the electronic structure of graphene. In this study, gate controllability of photo-oxidation of graphene is thoroughly examined using a field-effect-transistor configuration. The presence of water molecules enhances gate controllability, which can be explained using water-oxygen co-adsorption picture. In addition, the photo-oxidation reaction evolves from the edge and proceeds towards the center of the graphene channel, which can be understood by the fringing field effect. Semiconducting characteristics are successfully obtained by narrowing of the graphene channel, suggesting possible formation of a graphene nanoribbon under mild conditions, i.e., in air at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

We discuss the environmental instability of amorphous indium oxide (InOx)-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InOx doped with low and high concentrations of oxygen binder (SiO2) showed that out-diffusion of oxygen molecules causes drastic changes in the film conductivity and TFT turn-on voltages. Incorporation of sufficient SiO2 could suppress fluctuations in excess oxygen because of the high oxygen bond-dissociation energy and low Gibbs free energy. Consequently, the TFT operation became rather stable. The results would be useful for the design of reliable oxide TFTs with stable electrical properties.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Gate-controlled ultraviolet photo-etching of graphene edges

The chemical reactivity of graphene under ultraviolet (UV) light irradiation is investigated under positive and negative gate electric fields. Graphene edges are selectively etched when negative gate voltages are applied, while the reactivity is significantly suppressed for positive gate voltages. Oxygen adsorption onto graphene is significantly affected by the Fermi level of the final state achieved during previous electrical measurements. UV irradiation after negative-to-positive gate sweeps causes predominant oxygen desorption, while UV irradiation after gate sweeps in the opposite direction causes etching of graphene edges.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Photo-oxidation of Graphene in the Presence of Water

Oxygen molecules are found to exhibit non-negligible reactivity with graphene under strong light irradiation in the presence of water. The reaction is triggered by the laser Raman spectroscopy measurement itself, and the D band (ca. 1340 cm-1) becomes larger as the laser irradiation is prolonged. The electronic transport properties of the graphene derivative are also investigated and both the electron and hole mobility are found to be reduced. These results are attributed to oxidation of graphene. This primitive modification method can be exploited to manipulate the structural and electronic properties of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Analysis of Degradation in Graphene-based Spin Valves

The degradation mechanisms of multilayer graphene spin valves are investigated. The spin injection signals in graphene spin valves have been reported to be linearly dependent on the drain bias voltage, which indicates that the spin polarization of injected spins in graphene is robust against the bias voltage. We present that the disappearance of this robustness is due to two different degradation mechanisms of the spin valves. Our findings indicate that the disappearance of the robustness is due to degradation rather than an intrinsic characteristic of graphene. Thus, the robustness can be greatly enhanced if degradation can be prevented.

0 citations0 reviewsNo code linkedOpen access