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Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

We discuss the environmental instability of amorphous indium oxide (InOx)-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InOx doped with low and high concentrations of oxygen binder (SiO2) showed that out-diffusion of oxygen molecules causes drastic changes in the film conductivity and TFT turn-on voltages. Incorporation of sufficient SiO2 could suppress fluctuations in excess oxygen because of the high oxygen bond-dissociation energy and low Gibbs free energy. Consequently, the TFT operation became rather stable. The results would be useful for the design of reliable oxide TFTs with stable electrical properties.

preprint2015arXivOpen access
Shinya AikawaNobuhiko MitomaTakio KizuToshihide NabatameKazuhito Tsukagoshi
cond-mat.mtrl-sci
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Shinya AikawaNobuhiko MitomaTakio KizuToshihide NabatameKazuhito Tsukagoshi

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