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Nirmal Ganguli

Nirmal Ganguli contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2022arXiv

Implications of electron and hole doping on the magnetic properties of spin-orbit entangled Ca$_\text{4}$IrO$_\text{6}$ from DFT calculations

We investigate the electronic structure and magnetic properties of a $J_\text{eff} = 1/2$ iridate Ca$_4$IrO$_6$ and the implications of doping electrons and holes using ab initio density functional theory. Our calculations considering spin-orbit interaction reveal that although the Mott-insulating parent compound transforms into a conductor upon doping, antiferromagnetism sustains in the doped system, albeit with a grossly noncollinear arrangement of the spins. We find a strong spin-orbit interaction and magneto-crystalline anisotropy, causing frustration in the system, possibly leading to the highly noncollinear arrangement of spins upon non-magnetic doping. Our results may be important from the viewpoint of spintronics using iridates or other $5d$ materials.

preprint2014arXiv

First-principles study of the electronic structure of CdS/ZnSe coupled quantum dots

We have studied the electronic structure of CdS/ZnSe coupled quantum dot, a novel heterostructure at the nano-scale. Our calculations reveal CdS/ZnSe coupled quantum dots to be of type-II in nature where the anion-p states play an important role in deciding the band offset for the highest occupied molecular orbitals (HOMO). We show that the offsets of HOMO as well as the lowest unoccupied molecular orbitals (LUMO) can be tuned by changing the sizes of the components of the coupled quantum dot, thereby providing an additional control parameter to tune the band gap and the optical properties. Our investigations also suggest that formation of alloy near the interface has very little influence on the band offsets, although it affects the spatial localization of the quantum states from the individual components. Comparing the influence of strain on coupled quantum dots and core/shell nanowires, we find strain practically has no role in the electronic structure of coupled quantum dots as the small effective area of the interface in a coupled quantum dot helps a large part of the structure remain free from any substantial strain. We argue that in contrast to core-shell nanowires, quantum confinement is the key parameter that controls the electronic properties of coupled quantum dot and should therefore be an ideal candidate for the design of a quantum device.

preprint2014arXiv

Tuning ferromagnetism at interfaces between insulating perovskite oxides

We use density functional theory calculations to show that the LaAlO3|SrTiO3 interface between insulating perovskite oxides is borderline in satisfying the Stoner criterion for itinerant ferromagnetism and explore other oxide combinations with a view to satisfying it more amply. The larger lattice parameter of an LaScO3|BaTiO3 interface is found to be less favorable than the greater interface distortion of LaAlO3|CaTiO3. Compared to LaAlO3|SrTiO3, the latter is predicted to exhibit robust magnetism with a larger saturation moment and a higher Curie temperature. Our results provide support for a "two phase" picture of coexistent superconductivity and ferromagnetism.

preprint2013arXiv

Role of Te in the low dimensional multiferroic material FeTe2O5Br

Using first principles density functional calculations, we study the electronic structure of the low-dimensional multiferroic compound FeTe2O5Br to investigate the origin of the magnetoelectric (ME) effect and the role of Te ions in this system. We find that without magnetism even in the presence of Te-5s lone pairs, the system remains centrosymmetric due to the antipolar orientation of the lone pairs. Our study shows that the exchange striction within the Fe tetramers as well as between them is responsible for the ME effect in FeTe2O5Br. We also find that the Te^4+ ions play an important role in the inter-tetramer exchange striction as well as contribute to the electric polarization in FeTe2O5Br, once the polarization is triggered by the magnetic ordering.

preprint2012arXiv

Magnetic properties of Mn-doped Ge46 and Ba8Ge46 clathrates

We present a detailed study of the magnetic properties of unique cluster assembled solids namely Mn doped Ge46 and Ba8Ge46 clathrates using density functional theory. We find that ferromagnetic (FM) ground states may be realized in both the compounds when doped with Mn. In Mn2Ge44, ferromagnetism is driven by hybridization induced negative exchange splitting, a generic mechanism operating in many diluted magnetic semiconductors. However, for Mn-doped Ba8Ge46 clathrates incorporation of conduction electrons via Ba encapsulation results in RKKY-like magnetic interactions between the Mn ions. We show that our results are consistent with the major experimental observations for this system.

preprint2010arXiv

Electronic structure and magnetism of transition metal doped Zn12O12 clusters: Role of defects

We present a comprehensive study of the energetics and magnetic properties of ZnO clusters doped with 3d transition metals (TM) using ab initio density functional calculations in the framework of generalized gradient approximation + Hubbard U (GGA+U) method. Our results within GGA+U for all 3d dopants except Ti indicate that antiferromagnetic interaction dominates in a neutral, defect-free cluster. Formation energies are calculated to identify the stable defects in the ZnO cluster. We have analyzed in details the role of these defects to stabilize ferromagnetism when the cluster is doped with Mn, Fe, and Co. Our calculations reveal that in the presence of charged defects the transition metal atoms residing at the surface of the cluster may have an unusual oxidation state, that plays an important role to render the cluster ferromagnetic. Defect induced magnetism in ZnO clusters without any TM dopants is also analyzed. These results on ZnO clusters may have significant contributions in the nanoengineering of defects to achieve desired ferromagnetic properties for spintronic applications.