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Biplab Sanyal

Biplab Sanyal contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2022arXiv

Persistent half-metallic ferromagnetism in a (111)-oriented manganite superlattice

Heterostructures of mixed-valence manganites are still under intense scrutiny, due to the occurrence of exotic quantum phenomena linked to electronic correlation and interfacial composition. For instance, if two anti-ferromagnetic insulators as LaMnO$_3$ and SrMnO$_3$ are grown in a (001)-oriented superlattice, a half-metallic ferromagnet may form, provided that the thickness is sufficiently small to allow tunneling across interfaces. In this article, we employ electronic structure calculations to show that all the layers of a (111)-oriented LaMnO$_3$|SrMnO$_3$ superlattice retain a half-metallic ferromagnetic character for a much larger thickness than in its (001) counterpart. This behavior is shown to be linked to the charge transfer across the interface, favored by the octahedral connectivity between the layers. This also results in a symmetry-induced quenching of the Jahn-Teller distortions, which are replaced by breathing modes. The latter are coupled to charge and spin oscillations, whose components have a pure e g character. Most interestingly, the magnetization reaches its maximum value inside the LaMnO$_3$ region and not at the interface, which is fundamentally different from what observed for the (001) orientation. The analysis of the inter-atomic exchange coupling shows that the magnetic order arises from the double-exchange mechanism, despite competing interactions inside the SrMnO$_3$ region. Finally, the van Vleck distortions and the spin oscillations are found to be crucially affected by the variation of Hund's exchange and charge doping, which allows us to speculate that our system behaves as a Hund's metal, creating an interesting connection between manganites and nickelates.

preprint2021arXiv

Ferromagnetism with in-plane magnetization, Dirac spin-gapless semiconducting property, and tunable topological states in two-dimensional rare-earth-metal dinitrides

As the bulk single-crystal MoN2/ReN2 with a layered structure was successfully synthesized in experiment, transition-metal dinitrides have attracted considerable attention in recent years. Here, we focus on rare-earth-metal (Rem) elements and propose seven stable Rem dinitride monolayers with a 1T structure, namely 1T-RemN2. These monolayers have a ferromagnetic ground state with in-plane magnetization. Without spin-orbit coupling (SOC) effect, the band structures are spin-polarized with Dirac points at the Fermi level. Remarkably, the 1T-LuN2 monolayer shows an isotropic magnetic anisotropy energy in the xy-plane with in-plane magnetization, indicating easy tunability of the magnetization direction. When rotating the magnetization vector in the xy-plane, our proposed model can accurately describe the variety of the SOC band gap and two topological states (Weyl-like semimetal and Chern insulator states) appear with tunable properties. The Weyl-like semimetal state is a critical point between the two Chern insulator states with opposite sign of the Chern numbers. The large nontrivial band gap (up to 60.3 meV) and the Weyl-like semimetal state are promising for applications in spintronic devices.

preprint2020arXiv

Oxygen Vacancy in ZnO-$w$ Phase: Pseudohybrid Hubbard Density Functional Study

The study of zinc oxide, within the homogeneous electron gas approximation, results in overhybridization of zinc $3d$ shell with oxygen $2p$ shell, a problem shown for most transition metal chalcogenides. This problem can be partially overcome by using LDA+$U$ (or, GGA+$U$) methodology. However, in contrast to the zinc $3d$ orbital, Hubbard type correction is typically excluded for the oxygen $2p$ orbital. In this work, we provide results of electronic structure calculations of an oxygen vacancy in ZnO supercell from ab initio perspective, with two Hubbard type corrections, $U_{\mathrm{Zn}-3d}$ and $U_{\mathrm{O}-2p}$. The results of our numerical simulations clearly reveal that the account of $U_{\mathrm{O}-2p}$ has a significant impact on the properties of bulk ZnO, in particular the relaxed lattice constants, effective mass of charge carriers as well as the bandgap. For a set of validated values of $U_{\mathrm{Zn}-3d}$ and $U_{\mathrm{O}-2p}$ we demonstrate the appearance of a localized state associated with the oxygen vacancy positioned in the bandgap of the ZnO supercell. Our numerical findings suggest that the defect state is characterized by the highest overlap with the conduction band states as obtained in the calculations with no Hubbard-type correction included. We argue that the electronic density of the defect state is primarily determined by Zn atoms closest to the vacancy.

preprint2020arXiv

PAI-graphene: a new topological semimetallic two-dimensional carbon allotrope with highly tunable anisotropic Dirac cones

Using evolutionary algorithm for crystal structure prediction, we present a new stable two-dimensional (2D) carbon allotrope composed of polymerized as-indacenes (PAI) in a zigzag pattern, namely PAI-graphene whose energy is lower than most of the reported 2D allotropes of graphene. Crucially, the crystal structure realizes a nonsymmorphic layer group that enforces a nontrivial global topology of the band structure with two Dirac cones lying perfectly at the Fermi level. The absence of electron/hole pockets makes PAI-graphene a pristine crystalline topological semimetal having anisotropic Fermi velocities with a high value of $7.0 \times 10^{5}$ m/s. We show that while the semimetallic property of the allotrope is robust against the application of strain, the positions of the Dirac cone and the Fermi velocities can be modified significantly with strain. Moreover, by combining strain along both the x- and y-directions, two band inversions take place at $Γ$ leading to the annihilation of the Dirac nodes demonstrating the possibility of strain-controlled conversion of a topological semimetal into a semiconductor. Finally we formulate the bulk-boundary correspondence of the topological nodal phase in the form of a generalized Zak-phase argument finding a perfect agreement with the topological edge states computed for different edge-terminations.

preprint2020arXiv

Structural phase transition in monolayer gold(I) telluride: From a room-temperature topologicalinsulator to an auxetic semiconductor

Structural phase transitions between semiconductors and topological insulators have rich applications in nanoelectronics but are rarely found in two-dimensional (2D) materials. In this work, by combining ab initio computations and evolutionary structure search, we investigate two stable 2D forms of gold(I) telluride (Au$_{2}$Te) with square symmetry, noted as s(I)- and s(II)-Au$_{2}$Te. s(II)-Au$_{2}$Te is the global minimum structure and is a room-temperature topological insulator. s(I)-Au$_{2}$Te is a direct-gap semiconductor with high carrier mobilities and unusual in-plane negative Poisson's ratio. Both s(I) and s(II) phases have ultra-low Young's modulus, implying high flexibility. By applying a small tensile strain, s(II)-Au$_{2}$Te can be transformed into s(I)-Au$_{2}$Te. Hence, a structural phase transition from a room-temperature topological insulator to an auxetic semiconductor is found in the 2D forms of Au$_{2}$Te, which enables potential applications in phase-change electronic devices. Moreover, we elucidate the mechanism of the phase transition with the help of phonon spectra and group theory analysis.

preprint2020arXiv

Tailoring the opto-electronic response of graphene nanoflakes by size and shape optimization

The long spin-diffusion length, spin-lifetimes and excellent optical absorption coefficient of graphene provide an excellent platform for building opto-electronic devices as well as spin-based logic in a nanometer regime. In this study, by employing density functional theory and its time-dependent version, we provide a detailed analysis of how the size and shape of graphene nanoflakes can be used to alter their magnetic structure and optical properties. As the edges of zigzag graphene nanoribbons are known to align anti-ferromagnetically and armchair nanoribbons are typically non-magnetic, a combination of both in a nanoflake geometry can be used to optimize the ground-state magnetic structure and tailor the exchange coupling decisive for ferro- or anti-ferromagnetic edge magnetism, thereby offering the possibility to optimize the external fields needed to switch magnetic ordering. Most importantly, we show that the magnetic state alters the optical response of the flake leading to the possibility of opto-spintronic applications.

preprint2019arXiv

Magneto-structural correlations in a systematically disordered B2 lattice

Ferromagnetism in certain B2 ordered alloys such as Fe$_{60}$Al$_{40}$ can be switched on, and tuned, via antisite disordering of the atomic arrangement. The disordering is accompanied by a $\sim$1 % increase in the lattice parameter. Here we performed a systematic disordering of B2 Fe$_{60}$Al$_{40}$ thin films, and obtained correlations between the order parameter ($S$), lattice parameter ($a_0$), and the induced saturation magnetization ($M_{s}$). As the lattice is gradually disordered, a critical point occurs at 1-$S$=0.6 and $a_0$=291 pm, where a sharp increase of the $M_{s}$ is observed. DFT calculations suggest that below the critical point the system magnetically behaves as it would still be fully ordered, whereas above, it is largely the increase of $a_0$ in the disordered state that determines the $M_{s}$. The insights obtained here can be useful for achieving tailored magnetic properties in alloys through disordering.

preprint2016arXiv

Exchange interactions of CaMnO3 in the bulk and at the surface

In this work, we present electronic and magnetic properties of CaMnO3 (CMO) as obtained from ab initio calculations. We identify the preferable magnetic order by means of density functional theory plus Hubbard U calculations and extract the effective exchange parameters (Jij's) using the magnetic force theorem. We find that the effects of geometrical relaxation at the surface as well as the change of crystal field are very strong and are able to influence the lower energy magnetic configuration. In particular, our analysis reveals that the exchange interaction between the Mn atoms belonging to the surface and the subsurface layers is very sensitive to the structural changes. An earlier study [A. Filippetti and W.E. Pickett, Phys. Rev. Lett. 83, 4184 (1999)] suggested that this coupling is ferromagnetic and gives rise to the spin flip process on the surface of CMO. In our work we confirm their finding for an unrelaxed geometry, but once the structural relaxations are taken into account, this exchange coupling changes its sign. Thus, we suggest that the surface of CMO should have the same G-type antiferromagnetic order as in the bulk. Finally, we show that the suggested SF can be induced in the system by introducing an excess of electrons.

preprint2016arXiv

Gap opening and large spin-orbit splitting in MX2 (M=Mo,W X=S,Se,Te) from the interplay between crystal field and hybridizations: insights from ab-initio theory

By means of first-principles density functional calculations, we study the maximally localized Wannier functions for the 2D transition metal dichalcogenides MX2 (M=Mo,W X=S,Se,Te). We found a M^+4-like ionic charge and a single occupied d-band. The center of the d-like maximally localized Wannier function associated with this band is distributed among three M sites. Part of the energy gap is opened by the crystal field splitting induced by the X^-2-like atoms. We extract the hopping parameters for the Wannier functions and provide a perspective on tight-binding model. From the analysis of the tight binding model, we have found an inversion of the band character between the Gamma and the K points of the Brillouin zone due to the M-M hybridization. The consequence of this inversion is the closure of the gap. The M-X hybridization is the only one that tends to open the gap at every k-point, the change in the M-X and M-M hybridization is the main responsible for the difference in the gap between the different dichalcogenide materials. The inversion of the bands gives rise to different spin-orbit splitting at Gamma and K point in the valence band. The different character of the gap at Gamma and K point offers the chance to manipulate the semiconductive properties of these compounds. For a bilayer system, the hybridizations between the out of plane orbitals and the hybridizations between the in plane orbitals split the valence band respectively at the Gamma and K point. The splitting in the valence band is opened also without spin-orbit coupling and comes from the M-M and X-X hybridization between the two monolayers.