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Researcher profile

Nikolai N. Klimov

Nikolai N. Klimov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.opticscond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2015arXiv

Fabrication and Characterization of On-Chip Integrated Silicon Photonic Bragg Grating and Photonic Crystal Cavity Thermometers

We report on the fabrication and characterization of photonic-based nanothermometers, a silicon photonic Bragg grating and photonic crystal cavity. When cladded with silicon dioxide layer the sensors have at least eight times better sensitivity compared to the sensitivity of conventional fiber Bragg grating sensors. We demonstrate that these photonic thermometers are a viable temperature sensing solution.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

On-Chip Silicon Waveguide Bragg Grating Photonic Temperature Sensor

Resistance thermometry is a time-tested method for taking temperature measurements. In recent years fundamental limits to resistance-based approaches spurred considerable interest in developing photonic temperature sensors as a viable alternative. In this study we demonstrate that our photonic thermometer, which consists of a silicon waveguide integrated with a Bragg grating, can be used to measure temperature changes over the range from 5 C to 160 C with a combined expanded uncertainty [k = 2 ; 95% confidence level] of 1.25 degree C. The computational modeling of the sensor predicts the resonance wavelength and effective refractive index within 4% of the measured value.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Mechanism for puddle formation in graphene

When graphene is close to charge neutrality, its energy landscape is highly inhomogeneous, forming a sea of electron-like and hole-like puddles, which determine the properties of graphene at low carrier density. However, the details of the puddle formation have remained elusive. We demonstrate numerically that in sharp contrast to monolayer graphene, the normalized autocorrelation function for the puddle landscape in bilayer graphene depends only on the distance between the graphene and the source of the long-ranged impurity potential. By comparing with available experimental data, we find quantitative evidence for the implied differences in scanning tunneling microscopy measurements of electron and hole puddles for monolayer and bilayer graphene in nominally the same disorder potential.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Microscopic Polarization in Bilayer Graphene

Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric field or spontaneously formed through an interaction-induced symmetry breaking. Our scanning tunneling measurements reveal the microscopic nature of the bilayer gap to be very different from what is observed in previous macroscopic measurements or expected from current theoretical models. The potential difference between the layers, which is proportional to charge imbalance and determines the gap value, shows strong dependence on the disorder potential, varying spatially in both magnitude and sign on a microscopic level. Furthermore, the gap does not vanish at small charge densities. Additional interaction-induced effects are observed in a magnetic field with the opening of a subgap when the zero orbital Landau level is placed at the Fermi energy.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Evolution of Microscopic Localization in Graphene in a Magnetic Field from Scattering Resonances to Quantum Dots

Graphene is a unique two-dimensional material with rich new physics and great promise for applications in electronic devices. Physical phenomena such as the half-integer quantum Hall effect and high carrier mobility are critically dependent on interactions with impurities/substrates and localization of Dirac fermions in realistic devices. We microscopically study these interactions using scanning tunneling spectroscopy (STS) of exfoliated graphene on a SiO2 substrate in an applied magnetic field. The magnetic field strongly affects the electronic behavior of the graphene; the states condense into welldefined Landau levels with a dramatic change in the character of localization. In zero magnetic field, we detect weakly localized states created by the substrate induced disorder potential. In strong magnetic field, the two-dimensional electron gas breaks into a network of interacting quantum dots formed at the potential hills and valleys of the disorder potential. Our results demonstrate how graphene properties are perturbed by the disorder potential; a finding that is essential for both the physics and applications of graphene.

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