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Joseph A. Stroscio

Joseph A. Stroscio appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

17 published item(s)

preprint2016arXiv

Scanning Tunneling Spectroscopy of Proximity Superconductivity in Epitaxial Multilayer Graphene

We report on spatial measurements of the superconducting proximity effect in epitaxial graphene induced by a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial multilayer graphene on SiC. The aluminum films were discontinuous with networks of trenches in the film morphology reaching down to exposed graphene terraces. Scanning tunneling spectra measured on the graphene terraces show a clear decay of the superconducting energy gap with increasing separation from the graphene-aluminum edges. The spectra were well described by Bardeen-Cooper-Schrieffer (BCS) theory. The decay length for the superconducting energy gap in graphene was determined to be greater than 400 nm. Deviations in the exponentially decaying energy gap were also observed on a much smaller length scale of tens of nanometers.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Creating and Probing Electron Whispering Gallery Modes in Graphene

Designing high-finesse resonant cavities for electronic waves faces challenges due to short electron coherence lengths in solids. Previous approaches, e.g. the seminal nanometer-sized quantum corrals, depend on careful positioning of adatoms at clean surfaces. Here we demonstrate an entirely different approach, inspired by the peculiar acoustic phenomena in whispering galleries. Taking advantage of graphene's unique properties, namely gate-tunable light-like carriers, we create Whispering Gallery Mode (WGM) resonators defined by circular pn-junctions, induced by a scanning tunneling probe. We can tune the resonator size and the carrier concentration under the probe in a back-gated graphene device over a wide range, independently and in situ. The confined modes, revealed through characteristic resonances in the tunneling spectrum, originate from Klein scattering at pn junction boundaries. The WGM-type confinement and resonances are a new addition to the quantum electron-optics toolbox, paving the way to real-world electronic lenses and resonators.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Creating Nanostructured Superconductors On Demand by Local Current Annealing

Superconductivity results from a Bose condensate of Cooper-paired electrons with a macroscopic quantum wavefunction. Dramatic effects can occur when the region of the condensate is shaped and confined to the nanometer scale. Recent progress in nanostructured superconductors has revealed a route to topological superconductivity, with possible applications in quantum computing. However, challenges remain in controlling the shape and size of specific superconducting materials. Here, we report a new method to create nanostructured superconductors by partial crystallization of the half-Heusler material, YPtBi. Superconducting islands, with diameters in the range of 100 nm, were reproducibly created by local current annealing of disordered YPtBi in the tunneling junction of a scanning tunneling microscope (STM). We characterize the superconducting island properties by scanning tunneling spectroscopic measurements to determine the gap energy, critical temperature and field, coherence length, and vortex formations. These results show unique properties of a confined superconductor and demonstrate that this new method holds promise to create tailored superconductors for a wide variety of nanometer scale applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Programmable Extreme Pseudomagnetic Fields in Graphene by a Uniaxial Stretch

Many of the properties of graphene are tied to its lattice structure, allowing for tuning of charge carrier dynamics through mechanical strain. The graphene electro-mechanical coupling yields very large pseudomagnetic fields for small strain fields, up to hundreds of Tesla, which offer new scientific opportunities unattainable with ordinary laboratory magnets. Significant challenges exist in investigation of pseudomagnetic fields, limited by the non-planar graphene geometries in existing demonstrations and the lack of a viable approach to controlling the distribution and intensity of the pseudomagnetic field. Here we reveal a facile and effective mechanism to achieve programmable extreme pseudomagnetic fields with uniform distributions in a planar graphene sheet over a large area by a simple uniaxial stretch. We achieve this by patterning the planar graphene geometry and graphene-based hetero-structures with a shape function to engineer a desired strain gradient. Our method is geometrical, opening up new fertile opportunities of strain engineering of electronic properties of 2D materials in general.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Pseudomagnetic Fields in a Locally Strained Graphene Drumhead

Recent experiments reveal that a scanning tunneling microscopy (STM) probe tip can generate a highly localized strain field in a graphene drumhead, which in turn leads to pseudomagnetic fields in the graphene that can spatially confine graphene charge carriers in a way similar to a lithographically defined quantum dot (QD). While these experimental findings are intriguing, their further implementation in nanoelectronic devices hinges upon the knowledge of key underpinning parameters, which still remain elusive. In this paper, we first summarize the experimental measurements of the deformation of graphene membranes due to interactions with the STM probe tip and a back gate electrode. We then carry out systematic coarse grained, (CG), simulations to offer a mechanistic interpretation of STM tip-induced straining of the graphene drumhead. Our findings reveal the effect of (i) the position of the STM probe tip relative to the graphene drumhead center, (ii) the sizes of both the STM probe tip and graphene drumhead, as well as (iii) the applied back-gate voltage, on the induced strain field and corresponding pseudomagnetic field. These results can offer quantitative guidance for future design and implementation of reversible and on-demand formation of graphene QDs in nanoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states

Recently, the topological classification of electronic states has been extended to a new class of matter known as topological crystalline insulators. Similar to topological insulators, topological crystalline insulators also have spin-momentum locked surface states; but they only exist on specific crystal planes that are protected by crystal reflection symmetry. Here, we report an ultra-low temperature scanning tunneling microscopy and spectroscopy study on topological crystalline insulator SnTe nanoplates grown by molecular beam epitaxy. We observed quasiparticle interference patterns on the SnTe (001) surface that can be interpreted in terms of electron scattering from the four Fermi pockets of the topological crystalline insulator surface states in the first surface Brillouin zone. A quantitative analysis of the energy dispersion of the quasiparticle interference intensity shows two high energy features related to the crossing point beyond the Lifshitz transition when the two neighboring low energy surface bands near the point merge. A comparison between the experimental and computed quasiparticle interference patterns reveals possible spin texture of the surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films

Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device remains challenging. We have overcome this limitation by scanning tunneling microscopy and spectroscopy measurements on in-situ molecular beam epitaxy growth of Bi2Se3 films on SrTiO3 substrates with pre-patterned electrodes. Using this gating method, we are able to shift the Fermi level of the top surface states by 250 meV on a 3 nm thick Bi2Se3 device. We report field effect studies of the surface state dispersion, band gap, and electronic structure at the Fermi level.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thermoelectric imaging of structural disorder in epitaxial graphene

Heat is a familiar form of energy transported from a hot side to a colder side of an object, but not a notion associated with microscopic measurements of electronic properties. A temperature difference within a material causes charge carriers, electrons or holes, to diffuse along the temperature gradient inducing a thermoelectric voltage. Here we show that local thermoelectric measurements can yield high sensitivity imaging of structural disorder on the atomic and nanometre scales. The thermopower measurement acts to amplify the variations in the local density of states at the Fermi-level, giving high differential contrast in thermoelectric signals. Using this imaging technique, we uncovered point defects in the first layer of epitaxial graphene, which generate soliton-like domain wall line patterns separating regions of the different interlayer stacking of the second graphene layer.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Local Measurements of the Superconducting Pairing Symmetry in CuxBi2Se3

Topological superconductors represent a newly predicted phase of matter that is topologically distinct from conventional superconducting condensates of Cooper pairs. As a manifestation of their topological character, topological superconductors support solid-state realizations of Majorana fermions at their boundaries. The recently discovered superconductor CuxBi2Se3 has been theoretically proposed as an odd-parity superconductor in the time-reversal-invariant topological superconductor class and point-contact spectroscopy measurements have reported the observation of zero-bias conductance peaks corresponding to Majorana states in this material. Here we report scanning tunneling spectroscopy (STS) measurements of the superconducting energy gap in CuxBi2Se3 as a function of spatial position and applied magnetic field. The tunneling spectrum shows that the density of states at the Fermi level is fully gapped without any in-gap states. The spectrum is well described by the Bardeen-Cooper-Schrieffer (BCS) theory with a momentum independent order parameter, which suggests that Cu0.2Bi2Se3 is a classical s-wave superconductor contrary to previous expectations and measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Grain Boundary Loops in Graphene

Topological defects can affect the physical properties of graphene in unexpected ways. Harnessing their influence may lead to enhanced control of both material strength and electrical properties. Here we present a new class of topological defects in graphene composed of a rotating sequence of dislocations that close on themselves, forming grain boundary loops that either conserve the number of atoms in the hexagonal lattice or accommodate vacancy/interstitial reconstruction, while leaving no unsatisfied bonds. One grain boundary loop is observed as a "flower" pattern in scanning tunneling microscopy (STM) studies of epitaxial graphene grown on SiC(0001). We show that the flower defect has the lowest energy per dislocation core of any known topological defect in graphene, providing a natural explanation for its growth via the coalescence of mobile dislocations.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Landau Levels and Band Bending in Few-Layer Epitaxial Graphene

The carrier density distributions in few-layer-graphene systems grown on the carbon face of silicon carbide can be altered by the presence of a scanning tunneling microscope (STM) tip used to probe top-layer electronic properties, and by a perpendicular magnetic field which induces well-defined Landau levels. Hartree approximation calculations in the perpendicular field case show that charge tends to rearrange between the layers so that the filling factors of most layers are pinned at integer values. We use our analysis to provide insight into the role of buried layers in recent few-layer-graphene STM studies and discuss the limitations of our model.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Mechanism for puddle formation in graphene

When graphene is close to charge neutrality, its energy landscape is highly inhomogeneous, forming a sea of electron-like and hole-like puddles, which determine the properties of graphene at low carrier density. However, the details of the puddle formation have remained elusive. We demonstrate numerically that in sharp contrast to monolayer graphene, the normalized autocorrelation function for the puddle landscape in bilayer graphene depends only on the distance between the graphene and the source of the long-ranged impurity potential. By comparing with available experimental data, we find quantitative evidence for the implied differences in scanning tunneling microscopy measurements of electron and hole puddles for monolayer and bilayer graphene in nominally the same disorder potential.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Microscopic Polarization in Bilayer Graphene

Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric field or spontaneously formed through an interaction-induced symmetry breaking. Our scanning tunneling measurements reveal the microscopic nature of the bilayer gap to be very different from what is observed in previous macroscopic measurements or expected from current theoretical models. The potential difference between the layers, which is proportional to charge imbalance and determines the gap value, shows strong dependence on the disorder potential, varying spatially in both magnitude and sign on a microscopic level. Furthermore, the gap does not vanish at small charge densities. Additional interaction-induced effects are observed in a magnetic field with the opening of a subgap when the zero orbital Landau level is placed at the Fermi energy.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Epitaxial Graphene Electronic Structure And Transport

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure, and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analog epitaxial graphene amplifiers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Epitaxial Graphenes on Silicon Carbide

The materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals is reviewed. We show that the growth of epitaxial graphene on Si-terminated SiC(0001) is much different than growth on the C-terminated SiC(000 -1) surface, and discuss the physical structure of these graphenes. The unique electronic structure and transport properties of each type of epitaxial graphene is described, as well as progress toward the development of epitaxial graphene devices. This materials system is rich in subtleties, and graphene grown on the two polar faces differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Evolution of Microscopic Localization in Graphene in a Magnetic Field from Scattering Resonances to Quantum Dots

Graphene is a unique two-dimensional material with rich new physics and great promise for applications in electronic devices. Physical phenomena such as the half-integer quantum Hall effect and high carrier mobility are critically dependent on interactions with impurities/substrates and localization of Dirac fermions in realistic devices. We microscopically study these interactions using scanning tunneling spectroscopy (STS) of exfoliated graphene on a SiO2 substrate in an applied magnetic field. The magnetic field strongly affects the electronic behavior of the graphene; the states condense into welldefined Landau levels with a dramatic change in the character of localization. In zero magnetic field, we detect weakly localized states created by the substrate induced disorder potential. In strong magnetic field, the two-dimensional electron gas breaks into a network of interacting quantum dots formed at the potential hills and valleys of the disorder potential. Our results demonstrate how graphene properties are perturbed by the disorder potential; a finding that is essential for both the physics and applications of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Structural Determination of Multilayer Graphene via Atomic Moiré Interferometry

Rotational misalignment of two stacked honeycomb lattices produces a moiré pattern that is observable in scanning tunneling microscopy as a small modulation of the apparent surface height. This is known from experiments on highly-oriented pyrolytic graphite. Here, we observe the combined effect of three-layer moiré patterns in multilayer graphene grown on SiC ($000\bar{1}$). Small-angle rotations between the first and third layer are shown to produce a "double-moiré" pattern, resulting from the interference of moiré patterns from the first three layers. These patterns are strongly affected by relative lattice strain between the layers. We model the moiré patterns as a beat-period of the mismatched reciprocal lattice vectors and show how these patterns can be used to determine the relative strain between lattices, in analogy to strain measurement by optical moiré interferometry.

0 citations0 reviewsNo code linkedOpen access