Researcher profile

Nikhil Rangarajan

Nikhil Rangarajan contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Opening the Doors to Dynamic Camouflaging: Harnessing the Power of Polymorphic Devices

The era of widespread globalization has led to the emergence of hardware-centric security threats throughout the IC supply chain. Prior defenses like logic locking, layout camouflaging, and split manufacturing have been researched extensively to protect against intellectual property (IP) piracy at different stages. In this work, we present dynamic camouflaging as a new technique to thwart IP reverse engineering at all stages in the supply chain, viz., the foundry, the test facility, and the end-user. Toward this end, we exploit the multi-functionality, post-fabrication reconfigurability, and run-time polymorphism of spin-based devices, specifically the magneto-electric spin-orbit (MESO) device. Leveraging these unique properties, dynamic camouflaging is shown to be resilient against state-of-the-art analytical SAT-based attacks and test-data mining attacks. Such dynamic reconfigurability is not afforded in CMOS owing to fundamental differences in operation. For such MESO-based camouflaging, we also anticipate massive savings in power, performance, and area over other spin-based camouflaging schemes, due to the energy-efficient electric-field driven reversal of the MESO device. Based on thorough experimentation, we outline the promises of dynamic camouflaging in securing the supply chain end-to-end along with a case study, demonstrating the efficacy of dynamic camouflaging in securing error-tolerant image processing IP.

preprint2020arXiv

SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory

The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power operation. In this paper, we demonstrate, for the first time, circuit models and performance benchmarking for the domain wall (DW) reversal-based magnetoelectric-antiferromagnetic random access memory (ME-AFMRAM) at cell-level and at array-level. We also provide perspectives for coherent rotation-based memory switching with topological insulator-driven anomalous Hall read-out. In the coherent rotation regime, the ultra-low power magnetoelectric switching coupled with the terahertz-range antiferromagnetic dynamics result in substantially lower energy-per-bit and latency metrics for the ME-AFMRAM compared to other NVMs including STTMRAM and PCM. After characterizing the novel ME-AFMRAM, we leverage its unique properties to build a dense, on-chip, secure NVM platform, called SMART: A Secure Magnetoelectric Antiferromagnet- Based Tamper-Proof Non-Volatile Memory. New NVM technologies open up challenges and opportunities from a data-security perspective. For example, their sensitivity to magnetic fields and temperature fluctuations, and their data remanence after power-down make NVMs vulnerable to data theft and tampering attacks. The proposed SMART memory is not only resilient against data confidentiality attacks seeking to leak sensitive information but also ensures data integrity and prevents Denial-of-Service (DoS) attacks on the memory. It is impervious to particular power side-channel (PSC) attacks which exploit asymmetric read/write signatures for 0 and 1 logic levels, and photonic side-channel attacks which monitor photo-emission signatures from the chip backside.