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Niels Ubbelohde

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Published work

6 published item(s)

preprint2021arXiv

A random-walk benchmark for single-electron circuits

Mesoscopic integrated circuits achieving high-fidelity control of elementary quantum systems require new methodology for benchmarking. We offer circuit-level statistical description of rare-error accumulation in terms of a universal random-walk model for on-demand electron transfer. For a high-fidelity single-electron circuit, realized in the experiment as a chain of quantum dots in a GaAs/AlGaAs heterostructure, the error of the transfer operation is probed by charge counting. Error rates for extra ($P_+$) or missing ($P_-$) electrons of the electron shuttle are measured to $P_{-}=(6.92 \pm 0.14) \times 10^{-5}$ and $P_{+}=(2.13 \pm 0.08)\times 10^{-5}$ with uncertainty due to correlated noise in the environment. Furthermore, precise control over the timing of the random walk allows to explore the role of memory as the clock frequency is increased.

preprint2021arXiv

Magnetic field robust high quality factor NbTiN superconducting microwave resonators

We systematically study the performance of compact lumped element planar microwave $\mathrm{Nb_{70}Ti_{30}N}$ (NbTiN) resonators operating at 5 GHz in external in-plane magnetic fields up to 440 mT, a broad temperature regime from 2.2 K up to 13 K, as well as mK temperatures. For comparison, the resonators have been fabricated on thermally oxidized and pristine, (001) oriented silicon substrates. When operating the resonators in the multi-photon regime at $T=2.2$ K, we find internal quality factors $Q_{\mathrm{int}}\simeq$ $2\cdot10^5$ for NbTiN resonators grown on pristine Si substrates, while resonators grown on thermally oxidized substrates show a reduced value of $Q_{\mathrm{int}}\simeq$ $1\cdot10^4$, providing evidence for additional loss channels for the latter substrate. In addition, we investigate the $Q$-factors of the resonators on pristine Si substrates at millikelvin temperatures to asses their applicability for quantum applications. We find $Q_{\mathrm{int}}\simeq$ $2\cdot10^5$ in the single photon regime and $Q_{\mathrm{int}}\simeq$ $5\cdot10^5$ in the high power regime at $T=7$ mK.

preprint2014arXiv

Partitioning of on-demand electron pairs

We demonstrate the high fidelity splitting of electron pairs emitted on demand from a dynamic quantum dot by an electronic beam splitter. The fidelity of pair splitting is inferred from the coincidence of arrival in two detector paths probed by a measurement of the partitioning noise. The emission characteristic of the on-demand electron source is tunable from electrons being partitioned equally and independently to electron pairs being split with a fidelity of 90%. For low beam splitter transmittance we further find evidence of pair bunching violating statistical expectations for independent fermions.

preprint2013arXiv

Spin-dependent shot noise enhancement in a quantum dot

The spin-dependent dynamical blockade was investigated in a lateral quantum dot in a magnetic field. Spin-polarized edge channels in the two-dimensional leads and the spatial distribution of Landau orbitals in the dot modulate the tunnel coupling of the quantum dot level spectrum. In a measurement of the electron shot noise we observe a pattern of super-Poissonian noise which is correlated to the spin-dependent competition between different transport channels.

preprint2012arXiv

Measurement of finite-frequency current statistics in a single-electron transistor

Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single electron transistor (SET) can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the SET. We have directly measured the frequency-dependent current statistics and hereby fully characterized the fundamental tunneling processes in the SET. Our experiment paves the way for future investigations of interaction and coherence induced correlation effects in quantum transport.

preprint2011arXiv

A quantized current source with mesoscopic feedback

We study a mesoscopic circuit of two quantized current sources, realized by non-adiabatic single- electron pumps connected in series with a small micron-sized island in between. We find that quantum transport through the second pump can be locked onto the quantized current of the first one by a feedback due to charging of the mesoscopic island. This is confirmed by a measurement of the charge variation on the island using a nearby charge detector. Finally, the charge feedback signal clearly evidences loading into excited states of the dynamic quantum dot during single-electron pump operation.