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Researcher profile

Nicolas Vernier

Nicolas Vernier contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

5 published item(s)

preprint2015arXiv

Current Induced Fingering Instability in Magnetic Domain Walls

The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient is found either to stabilize domains with walls perpendicular to current lines or to produce finger-like patterns, depending on the domain wall motion direction. The instability mechanism is shown to result from the non-adiabatic contribution of the spin transfer torque mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Modified current induced domain wall motion in GaMnAs nanowire

We report on current induced domain wall propagation in a patterned GaMnAs microwire with perpendicular magnetization. An unexpected slowing down of the propagation velocity has been found when the moving domain wall extends over only half of the width of the wire. This slowing down is related to the elongation of a longitudinal wall along the axis of the wire. By using an energy balance argument, the expected theoretical dependence of the velocity change has been calculated and compared with the experimental results. According to this, the energy associated to the longitudinal domain wall should change when a current passes through the wire. These results provide possible evidence of transverse spin diffusion along a longitudinal domain wall.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer.

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preprint2004arXiv

Universality of thermally assisted magnetic domain wall motion under spin torque

Thermally assisted motion of magnetic domain wall under spin torque is studied theoretically. It is shown that the wall velocity $v$ depends exponentially on the spin current, $\Is$, below the threshold value, in the same way as in a thermally activated motion driven by a force. A novel property of the spin torque driven case at low temperature is that the linear term in spin current is universal, i.e., $\ln v \sim \frac{π\hbar}{2e}(\Is/\kB T)$. This behavior, which is independent of pinning and material constants, could be used to confirm experimentally the spin torque as the driving mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Domain wall propagation in magnetic nanowires by spin polarized current injection

We demonstrate movement of a head-to-head domain wall through a magnetic nanowire simply by passing an electrical current through the domain wall and without any external magnetic field applied. The effect depends on the sense and magnitude of the electrical current and allows direct propagation of domain walls through complex nanowire shapes, contrary to the case of magnetic field induced propagation. The efficiency of this mechanism has been evaluated and the effective force acting on the wall has been found equal to 0.88x10-9 N.A-1.

0 citations0 reviewsNo code linkedOpen access