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Jacques Ferré

Jacques Ferré contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2013arXiv

Modified current induced domain wall motion in GaMnAs nanowire

We report on current induced domain wall propagation in a patterned GaMnAs microwire with perpendicular magnetization. An unexpected slowing down of the propagation velocity has been found when the moving domain wall extends over only half of the width of the wire. This slowing down is related to the elongation of a longitudinal wall along the axis of the wire. By using an energy balance argument, the expected theoretical dependence of the velocity change has been calculated and compared with the experimental results. According to this, the energy associated to the longitudinal domain wall should change when a current passes through the wire. These results provide possible evidence of transverse spin diffusion along a longitudinal domain wall.

preprint2006arXiv

Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer.