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Nicholas P. Breznay

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Published work

8 published item(s)

preprint2020arXiv

Competition between magnetic order and charge localization in Na$_2$IrO$_3$ thin crystal devices

Spin orbit assisted Mott insulators such as sodium iridate (Na$_2$IrO$_3$) have been an important subject of study in the recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects and a honeycomb arrangement of ions bring exciting ground states, predicted in the frame of the Kitaev model. The insulating character of Na$_2$IrO$_3$ has hampered its integration to an electronic device, desirable for applications, such as the manipulation of quasiparticles interesting for topological quantum computing. Here we show through electronic transport measurements supported by Angle Resolved Photoemission Spectroscopy (ARPES) experiments, that electronic transport in Na$_2$IrO$_3$ is ruled by variable range hopping and it is strongly dependent on the magnetic ordering transition known for bulk Na$_2$IrO$_3$, as well as on external electric fields. Electronic transport measurements allow us to deduce a value for the localization length and the density of states in our Na$_2$IrO$_3$ thin crystals devices, offering an alternative approach to study insulating layered materials.

preprint2019arXiv

Hidden spin-orbital order in the Kitaev hyperhoneycomb $β$-Li$_2$IrO$_3$

We report the existence of a phase transition at high temperature in the 3D Kitaev candidate material, $β$-Li$_2$IrO$_3$. We show that the transition is bulk, intrinsic and orders a tiny magnetic moment with a spatially anisotropic saturation moment. We show that even though this transition is global, it does not freeze the local Ir moments, which order at much lower temperatures into an incommensurate state. Rather, the ordered moment has an orbital origin that is coupled to spin correlations, likely of a Kitaev origin. The separate ordering of spin-correlated orbital moments and of local Ir moments reveals a novel way in which magnetic frustration in Kitaev systems can lead to coexisting magnetic states.

preprint2016arXiv

Self Duality and a possible Hall-insulator phase near the superconductor-to-insulator transition in two-dimensional indium-oxide films

We combine measurements of the longitudinal ($ρ_{xx}$) and Hall ($ρ_{xy}$) resistivities of disordered two dimensional amorphous indium-oxide films to study the magnetic-field tuned superconductor to insulator transition (H-SIT) in the $T \to 0$ limit. At the critical field, $H_c$, the full resistivity tensor is $T$ independent with $ρ_{xx}(H_c) = h/4e^2$ and $ρ_{xy}(H_c)=0$ within experimental uncertainty in all films (i.e. these appear to be "universal" values), this is strongly suggestive that there is a particle-vortex self-duality at $H=H_c$. The transition separates the (presumably) superconducting state at $H<H_c$ from a "Hall-insulator" phase in which $ρ_{xx}\to \infty$ as $T\to 0$ while $ρ_{xy}$ approaches a non-zero value smaller than its "classical value" $H/nec$, i.e. $0<ρ_{xy}<H/nec$. A still higher characteristic magnetic field, $H_c^*> H_c$, at which the Hall resistance is $T$ independent and roughly equal to its classical value, $ρ_{xy}\approx H/nec$, marks an additional crossover to a highfield regime (probably to a Fermi-insulator) in which $ρ_{xy} > H/nec$ and possibly diverges as $T\to 0$. We also highlight a profound analogy between the H-SIT and quantum-Hall liquid to insulator transitions (QHIT).

preprint2016arXiv

Shubnikov-de Haas quantum oscilations reveal a reconstructed Fermi surface near optimal doping in a thin film of the cuprate superconductor Pr$_{1.86}$Ce$_{0.14}$CuO$_{4\pmδ}$

We study magnetotransport properties of the electron-doped superconductor Pr$_{2-x}$Ce$_x$CuO$_{4\pmδ}$ with $x$ = 0.14 in magnetic fields up to 92~T, and observe Shubnikov de-Haas magnetic quantum oscillations. The oscillations display a single frequency $F$=255$\pm$10~T, indicating a small Fermi pocket that is $\sim$~1\% of the two-dimensional Brillouin zone and consistent with a Fermi surface reconstructed from the large hole-like cylinder predicted for these layered materials. Despite the low nominal doping, all electronic properties including the effective mass and Hall effect are consistent with overdoped compounds. Our study demonstrates that the exceptional chemical control afforded by high quality thin films will enable Fermi surface studies deep into the overdoped cuprate phase diagram.

preprint2013arXiv

Observation of the ghost critical field for superconducting fluctuations in a disordered TaN thin film

We experimentally study the ghost critical field (GCF), a magnetic field scale for the suppression of superconducting fluctuations, using Hall effect and magnetoresistance measurements on a disordered superconducting thin film near its transition temperature $T_c$. We observe an increase in the Hall effect with a maximum in field that tracks the upper critical field below $T_c$, vanishes near $T_c$, and returns to higher fields above $T_c$. Such a maximum has been observed in studies of the Nernst effect and identified as the GCF. Magnetoresistance measurements near $T_c$ indicate quenching of superconducting fluctuations, agree with established theoretical descriptions, and allow us to extract the GCF and other parameters. Above $T_c$ the Hall peak field is quantitatively distinct from the GCF, and we contrast this finding with ongoing studies of the Nernst effect and superconducting fluctuations in unconventional and thin-film superconductors.

preprint2012arXiv

Hall conductivity dominated by fluctuations near the superconducting transition in disordered films

We have studied the Hall effect in superconducting tantalum nitride films. We find a large contribution to the Hall conductivity near the superconducting transition, which we can track to temperatures well above $T_c$ and magnetic fields well above the upper critical field, $\text{\text{H}}_{c2}(0)$. This contribution arises from Aslamazov-Larkin superconducting fluctuations, and we find quantitative agreement between our data and recent theoretical analysis based on time dependent Ginzburg-Landau theory.

preprint2012arXiv

Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe

Phase change materials can be reversibly switched between amorphous and crystalline states and often show strong contrast in the optical and electrical properties of these two phases. They are now in widespread use for optical data storage, and their fast switching and a pronounced change of resistivity upon crystallization are also very attractive for nonvolatile electronic data storage. Nevertheless there are still several open questions regarding the electronic states and charge transport in these compounds. In this work we study electrical transport in thin metallic films of the disordered, crystalline phase change material Ge$_1$Sb$_2$Te$_4$. We observe weak antilocalization and disorder enhanced Coulomb interaction effects at low temperatures, and separate the contributions of these two phenomena to the temperature dependence of the resistivity, Hall effect, and magnetoresistance. Strong spin-orbit scattering causes positive magnetoresistance at all temperatures, and a careful analysis of the low-field magnetoresistance allows us to extract the temperature dependent electron dephasing rate and study other scattering phenomena. We find electron dephasing due to inelastic electron-phonon scattering at higher temperatures, electron-electron scattering dephasing at intermediate temperatures, and a crossover to weak temperature dependence below 1 K.

preprint2007arXiv

The approach to a superconductor-to-Bose-insulator transition in disordered films

Through a detailed study of scaling near the magnetic field-tuned superconductor-to-insulator transition in strongly disordered films, we find that results for a variety of materials can be collapsed onto a single phase diagram. The data display two clear branches, one with weak disorder and an intervening metallic phase, the other with strong disorder. Along the strongly disordered branch, the resistance at the critical point approaches $R_Q = h/4e^2$ and the scaling of the resistance is consistent with quantum percolation, and therefore with the predictions of the dirty boson model.