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Myles A. Steiner

Myles A. Steiner appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.app-phcond-mat.mtrl-scicond-mat.supr-conphysics.opticscond-mat.str-el

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Published work

11 published item(s)

preprint2022arXiv

Efficient and Scalable GaInAs Thermophotovoltaic Devices

Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm$^2$), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8$\pm$2.0% and an electrical power density of 3.78 W/cm$^2$ at an emitter temperature of 1850°C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with a highly optimized cell architecture, excellent material quality, and very low series resistance. Importantly, fabrication of 12 high-performing devices on a two-inch wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, and early results for a two-junction 0.84-eV GaInPAs / 0.74-eV GaInAs device illustrate this promise.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Efficient light-trapping in ultrathin GaAs solar cells using quasi-random photonic crystals

Ultrathin solar cells reduce material usage and allow the use of lower-quality materials thanks to their one order of magnitude smaller thickness than their conventional counterparts. However, efficient photonic light-trapping is required to harvest the incident light efficiently for an otherwise insufficient absorber thickness. Quasi-random photonic crystals are predicted to have high efficient light-trapping while being more robust under angle and thickness variations than simple photonic crystals. Here we experimentally demonstrate a light-trapping solution based on quasi-random photonic crystals fabricated by polymer blend lithography. We control the average lattice parameter by modifying the spin-coating speed. We demonstrate an ultrathin GaAs cell of 260 nm with a rear quasi-random pattern with submicron features, and a Jsc =26.4 mA/cm2 and an efficiency of 22.35% under the global solar spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Identifying optimal photovoltaic technologies for underwater applications

Improving solar energy collection in aquatic environments would allow for superior environmental monitoring and remote sensing, but the identification of optimal photovoltaic technologies for such applications is challenging as evaluation requires either field deployment or access to large water tanks. Here, we present a simple bench-top characterization technique that does not require direct access to water and therefore circumvents the need for field testing during initial trials of development. Employing LEDs to simulate underwater solar spectra at various depths, we compare Si and CdTe solar cells, two commercially available technologies, with GaInP cells, a technology with a wide band gap close to ideal for underwater solar harvesting. We use this method to show that while Si cells outperform both CdTe and GaInP under terrestrial AM1.5G solar irradiance, both CdTe and GaInP outperform Si at depths > 2 m, with GaInP cells operating with underwater efficiencies exceeding 51%.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates

Like many optoelectronics, the highest quality III-V solar cells start out as thin single-crystalline multilayers on GaAs substrates. Separating these device layers from their growth substrate enables higher performing devices and wafer reuse, both of which are critical for III-V solar cell viability in a terrestrial market. Here, we remove rigidly-bonded, lattice-matched, 16 mm$^2$ x 3.5 um thick GaAs devices off a GaAs substrate using a 10 ns, unfocused Nd:YAG laser pulse. The pulse is selectively absorbed in a lower-bandgap, lattice-matched, crystalline layer below the device, driving a quasi-two dimensional ablation event that ejects the crystalline multilayer from the substrate. After minutes of selective wet-chemical etching and front contact deposition, our champion 0.1 cm$^2$ device showed a (17.4 +/- 0.5) % power conversion efficiency and an open-circuit voltage of 1.07 V, using AM1.5 direct (1000 W m$^{-2}$) with no anti-reflection coating. We show that the performance is comparable to similar solar cells produced via conventional substrate dissolution processes. We discuss unique process characteristics and opportunities, such as the potential to separate wafer-sized thin film solar cells per laser pulse.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices

Multijunction solar cell design is guided by both the theoretical optimal bandgap combination as well as the realistic limitations to materials with these bandgaps. For instance, triple-junction III-V multijunction solar cells commonly use GaAs as a middle cell because of its near-perfect material quality, despite its bandgap being higher than optimal for the global spectrum. Here, we modify the GaAs bandgap using thick GaInAs/GaAsP strain-balanced quantum well (QW) solar cells with excellent voltage and absorption. These high-performance QWs are incorporated into a triple-junction inverted metamorphic multijunction device consisting of a GaInP top cell, GaInAs/GaAsP QW middle cell, and lattice-mismatched GaInAs bottom cell, each of which has been highly optimized. We demonstrate triple-junction efficiencies of 39.5% and 34.2% under the global and space spectra, respectively, which are higher than previous record six-junction devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Semiconductor-Dielectric-Metal Solar Absorbers with High Spectral Selectivity

An ideal solar thermal absorber has a sharp transition between high and low absorptance at the wavelength where the blackbody emissive power begins to exceed the solar irradiance. However, most real selective absorbers have a fairly broad transition, leading to both solar absorption and thermal emission losses. Here, we model, fabricate, and characterize a highly selective semiconductor-dielectric-metal (Ga0.46In0.54As - MgF2 - Ag) solar absorber with an extremely sharp transition from high to low absorptance. The thin semiconductor serves as a selective filter, absorbing photons with wavelengths shorter than the bandgap and transmitting those with longer wavelengths. The highly reflective dielectric-metal rear mirror allows the structure to have very low emittance for longer wavelengths. These characteristics provide the absorber with a measured solar absorptance >91% below the bandgap wavelength and infrared emittance <5% at 100 C above the bandgap wavelength. This transition wavelength can be tuned by modifying the semiconductor composition, and modeling indicates that the absorber's optical properties should be stable at high temperatures, making the structure a good candidate for unconcentrated to highly concentrated solar thermal energy conversion.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Thermophotovoltaic Efficiency of 40%

We report the fabrication and measurement of thermophotovoltaic (TPV) cells with efficiencies of >40%, which is a record high TPV efficiency and the first experimental demonstration of the efficiency of high-bandgap tandem TPV cells. TPV efficiency was determined by simultaneous measurement of electric power output and heat dissipation from the device via calorimetry. The TPV cells are two-junction devices comprising high-quality III-V materials with band gaps between 1.0 and 1.4 eV that are optimized for high emitter temperatures of 1900-2400°C. The cells exploit the concept of band-edge spectral filtering to obtain high efficiency, using high-reflectivity back surface reflectors to reject unusable sub-bandgap radiation back to the emitter. A 1.4/1.2 eV device reached a maximum efficiency of (41.1 +/- 1)% operating at a power density of 2.39 W/cm2 under an irradiance of 30.4 W/cm2 and emitter temperature of 2400°C. A 1.2/1.0 device reached a maximum efficiency of (39.3 +/- 1)% operating at a power density of 1.8 W/cm2 under an irradiance of 20.1 W/cm2 and emitter temperature of 2127°C. These cells can be integrated into a TPV system for thermal energy grid storage (TEGS) to enable dispatchable renewable energy. These new TPV cells enable a pathway for TEGS to reach sufficiently high efficiency and sufficiently low cost to enable full decarbonization of the grid. Furthermore, the high demonstrated efficiency also gives TPV the potential to compete with turbine-based heat engines for large-scale power production with respect to both cost and performance, thereby enabling possible usage in natural gas or hydrogen-fueled electricity production.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Solar Thermoradiative-Photovoltaic Energy Conversion

We propose a solar thermal energy conversion system consisting of a solar absorber, a thermoradiative cell or negative illumination photodiode, and a photovoltaic cell. Because it is a heat engine, this system can also be paired with thermal storage to provide reliable electricity generation. Heat from the solar absorber drives radiative recombination current in the thermoradiative cell, and its emitted light is absorbed by the photovoltaic cell to provide an additional photocurrent. Based on the principle of detailed balance, we calculate a limiting solar conversion efficiency of 85% for fully concentrated sunlight and 45% for one sun with an absorber and single-junction cells of equal areas. Ideal and nonideal solar thermoradiative-photovoltaic systems outperform solar thermophotovoltaic converters for low bandgaps and practical absorber temperatures. Their performance enhancement results from a high tolerance to nonradiative generation/recombination and an ability to minimize radiative heat losses. We show that a realistic device with all major losses could achieve increases in solar conversion efficiency by up to 7.9% (absolute) compared to a solar thermophotovoltaic device under low optical concentration. Our results indicate that these converters could serve as efficient heat engines for low cost single axis tracking systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Self Duality and a possible Hall-insulator phase near the superconductor-to-insulator transition in two-dimensional indium-oxide films

We combine measurements of the longitudinal ($ρ_{xx}$) and Hall ($ρ_{xy}$) resistivities of disordered two dimensional amorphous indium-oxide films to study the magnetic-field tuned superconductor to insulator transition (H-SIT) in the $T \to 0$ limit. At the critical field, $H_c$, the full resistivity tensor is $T$ independent with $ρ_{xx}(H_c) = h/4e^2$ and $ρ_{xy}(H_c)=0$ within experimental uncertainty in all films (i.e. these appear to be "universal" values), this is strongly suggestive that there is a particle-vortex self-duality at $H=H_c$. The transition separates the (presumably) superconducting state at $H<H_c$ from a "Hall-insulator" phase in which $ρ_{xx}\to \infty$ as $T\to 0$ while $ρ_{xy}$ approaches a non-zero value smaller than its "classical value" $H/nec$, i.e. $0<ρ_{xy}<H/nec$. A still higher characteristic magnetic field, $H_c^*> H_c$, at which the Hall resistance is $T$ independent and roughly equal to its classical value, $ρ_{xy}\approx H/nec$, marks an additional crossover to a highfield regime (probably to a Fermi-insulator) in which $ρ_{xy} > H/nec$ and possibly diverges as $T\to 0$. We also highlight a profound analogy between the H-SIT and quantum-Hall liquid to insulator transitions (QHIT).

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preprint2015arXiv

III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100$^{\circ}$C to 350$^{\circ}$C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 $Ω$cm$^2$ for samples bonded at 200$^{\circ}$C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga$_{0.5}$In$_{0.5}$P/Si tandem solar cells operating at one sun or low concentration conditions.

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preprint2007arXiv

The approach to a superconductor-to-Bose-insulator transition in disordered films

Through a detailed study of scaling near the magnetic field-tuned superconductor-to-insulator transition in strongly disordered films, we find that results for a variety of materials can be collapsed onto a single phase diagram. The data display two clear branches, one with weak disorder and an intervening metallic phase, the other with strong disorder. Along the strongly disordered branch, the resistance at the critical point approaches $R_Q = h/4e^2$ and the scaling of the resistance is consistent with quantum percolation, and therefore with the predictions of the dirty boson model.

0 citations0 reviewsNo code linkedOpen access