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Nguyen Thanh Tu

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cond-mat.mtrl-sci

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preprint2020arXiv

Evolution of the Fe-3 $d$ impurity band state as the origin of high Curie temperature in p-type ferromagnetic semiconductor (Ga,Fe)Sb

(Ga $_{1-x}$ ,Fe $_x$ )Sb is one of the promising ferromagnetic semiconductors for spintronic device applications because its Curie temperature ( $T_{\rm C}$ ) is above 300 K when the Fe concentration $x$ is equal to or higher than ~0.20. However, the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and first-principles calculations to investigate the $x$ dependence of the Fe 3 $d$ states in (Ga $_{1-x}$ ,Fe $_x$ )Sb ( $x$ = 0.05, 0.15, and 0.25) thin films. The observed Fe 2 $p$ -3 $d$ RPES spectra reveal that the Fe-3 $d$ impurity band (IB) crossing the Fermi level becomes broader with increasing $x$ , which is qualitatively consistent with the picture of double-exchange interaction. Comparison between the obtained Fe-3 $d$ partial density of states and the first-principles calculations suggests that the Fe-3 $d$ IB originates from the minority-spin ( $\downarrow$ ) $e$ states. The results indicate that enhancement of the interaction between $e_\downarrow$ electrons with increasing $x$ is the origin of the high $T_{\rm C}$ in (Ga,Fe)Sb.

preprint2020arXiv

Hybridization between the ligand $p$ band and Fe-3 $d$ orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb

(Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature ( $T_{\rm C}$ ) is above room temperature. However, the origin of ferromagnetism with high $T_{\rm C}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of (Ga $_{0.95}$ ,Fe $_{0.05}$ )Sb including the Fe-3 $d$ impurity band (IB), to unveil the mechanism of ferromagnetism in (Ga,Fe)Sb. We find that the VB dispersion in (Ga $_{0.95}$ ,Fe $_{0.05}$ )Sb observed by SX-ARPES is similar to that of GaSb, indicating that the doped Fe atoms hardly affect the band dispersion. The Fe-3 $d$ resonant ARPES spectra demonstrate that the Fe-3 $d$ IB crosses the Fermi level ( $E_{\rm F}$ ) and hybridizes with the VB of GaSb. These observations indicate that the VB structure of (Ga $_{0.95}$ ,Fe $_{0.05}$ )Sb is consistent with that of the IB model which is based on double-exchange interaction between the localized 3 $d$ electrons of the magnetic impurities. The results indicate that the ferromagnetism in (Ga,Fe)Sb is formed by the hybridization of the Fe-3 $d$ IB with the ligand $p$ band of GaSb.

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Nguyen Thanh Tu

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2 publications

Evolution of the Fe-3 $d$ impurity band state as the origin of high Curie temperature in p-type ferromagnetic semiconductor (Ga,Fe)Sb

Hybridization between the ligand $p$ band and Fe-3 $d$ orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb

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Nguyen Thanh Tu

Research overview

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2 publications

Evolution of the Fe-3ddd impurity band state as the origin of high Curie temperature in p-type ferromagnetic semiconductor (Ga,Fe)Sb

Hybridization between the ligand ppp band and Fe-3ddd orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb

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Building this map preview

Evolution of the Fe-3 $d$ impurity band state as the origin of high Curie temperature in p-type ferromagnetic semiconductor (Ga,Fe)Sb

Hybridization between the ligand $p$ band and Fe-3 $d$ orbitals in the p-type ferromagnetic semiconductor (Ga,Fe)Sb