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Researcher profile

Nguyen H. Le

Nguyen H. Le contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elquant-ph

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Published work

3 published item(s)

preprint2026arXiv

Fast thermal state preparation beyond native interactions

While questions on quantum simulation of ground state physics are mostly focussed on the realization of effective interactions, most work on quantum simulation of thermal physics explores the realization of dynamics towards a thermal mixed state under native interactions. Many open questions that could be answered with quantum simulations, however, involve thermal states with respect to synthetic interactions. We present a framework based solely on unitary dynamics to design quantum simulations for thermal states with respect to Hamiltonians that include non-native interactions, suitable for both present-day digital and analogue devices. By classical means, our method finds the control sequence to reach a target thermal state for system sizes well out of reach of state-vector or density-matrix control methods, even though quantum hardware is required to explicitly simulate the thermal state dynamics. With the illustrative example of the cluster Ising model that includes non-native three-body interactions, we find that required experimental resources, such as the total evolution time, are independent of temperature and criticality.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Topological phases of a dimerized Fermi-Hubbard model for semiconductor nano-lattices

Motivated by recent advances in fabricating artificial lattices in semiconductors and their promise for quantum simulation of topological materials, we study the one-dimensional dimerized Fermi-Hubbard model. We show how the topological phases at half-filling can be characterized by a reduced Zak phase defined based on the reduced density matrix of each spin subsystem. Signatures of bulk-boundary correspondence are observed in the triplon excitation of the bulk and the edge states of uncoupled spins at the boundaries. At quarter-filling we show that owing to the presence of the Hubbard interaction the system can undergo a transition to the topological ground state of the non-interacting Su-Schrieffer-Heeger model with the application of a moderate-strength external magnetic field. We propose a robust experimental realization with a chain of dopant atoms in silicon or gate-defined quantum dots in GaAs where the transition can be probed by measuring the tunneling current through the many-body state of the chain.

0 citations0 reviewsNo code linkedOpen access