Researcher profile

Nemin Wei

Nemin Wei contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Strong-Magnetic-Field Magnon Transport in Monolayer Graphene

At high magnetic fields, monolayer graphene hosts competing phases distinguished by their breaking of the approximate SU(4) isospin symmetry. Recent experiments have observed an even denominator fractional quantum Hall state thought to be associated with a transition in the underlying isospin order from a spin-singlet charge density wave at low magnetic fields to an antiferromagnet at high magnetic fields, implying that a similar transition must occur at charge neutrality. However, this transition does not generate contrast in typical electrical transport or thermodynamic measurements and no direct evidence for it has been reported, despite theoretical interest arising from its potentially unconventional nature. Here, we measure the transmission of ferromagnetic magnons through the two dimensional bulk of clean monolayer graphene. Using spin polarized fractional quantum Hall states as a benchmark, we find that magnon transmission is controlled by the detailed properties of the low-momentum spin waves in the intervening Hall fluid, which is highly density dependent. Remarkably, as the system is driven into the antiferromagnetic regime, robust magnon transmission is restored across a wide range of filling factors consistent with Pauli blocking of fractional quantum hall spin-wave excitations and their replacement by conventional ferromagnetic magnons confined to the minority graphene sublattice. Finally, using devices in which spin waves are launched directly into the insulating charge-neutral bulk, we directly detect the hidden phase transition between bulk insulating charge density wave and a canted antiferromagnetic phases at charge neutrality, completing the experimental map of broken-symmetry phases in monolayer graphene.

preprint2020arXiv

Current Driven Magnetization Reversal in Orbital Chern Insulators

Graphene multilayers with flat moiré minibands can exhibit the quantized anomalous Hall effect due to the combined influence of spontaneous valley polarization and topologically non-trival valley-projected bands. The sign of the Hall effect in these Chern insulators can be reversed either by applying an external magnetic field, or by driving a transport current through the system. We propose a current-driven mechanism whereby reversal occurs along lines in the (current $I$, magnetic-field $B$) control parameter space with slope $dI/dB = (e/h)\, M A_{M} \, (1-γ^2)/γ$, where $M$ is the magnetization, $A_M$ is the moiré unit cell area, and $γ<1$ is the ratio of the chemical potential difference between valleys along a domain wall to the electrical bias $eV$.