Current Driven Magnetization Reversal in Orbital Chern Insulators

preprint2020arXivOpen access

Abstract

Graphene multilayers with flat moiré minibands can exhibit the quantized anomalous Hall effect due to the combined influence of spontaneous valley polarization and topologically non-trival valley-projected bands. The sign of the Hall effect in these Chern insulators can be reversed either by applying an external magnetic field, or by driving a transport current through the system. We propose a current-driven mechanism whereby reversal occurs along lines in the (current II, magnetic-field BB) control parameter space with slope dI/dB=(e/h) MAM (1−γ2)/γdI/dB = (e/h)\, M A_{M} \, (1-γ^2)/γ, where MM is the magnetization, AMA_M is the moiré unit cell area, and γ<1γ<1 is the ratio of the chemical potential difference between valleys along a domain wall to the electrical bias eVeV.

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