Researcher profile

Neil J. Curson

Neil J. Curson contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el physics.chem-ph quant-ph

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preprint2022arXiv

Room temperature donor incorporation for quantum devices: arsine on germanium

Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms as qubits have largely focussed on phosphorus in silicon. Positioning phosphorus in silicon with atomic-scale precision requires a thermal incorporation anneal, but the low success rate for this step has been shown to be a fundamental limitation prohibiting the scale-up to large-scale devices. Here, we present a comprehensive study of arsine (AsH$_3$) on the germanium (001) surface. We show that, unlike any previously studied dopant precursor on silicon or germanium, arsenic atoms fully incorporate into substitutional surface lattice sites at room temperature. Our results pave the way for the next generation of atomic-scale donor devices combining the superior electronic properties of germanium with the enhanced properties of arsine/germanium chemistry that promises scale-up to large numbers of deterministically-placed qubits.

preprint2020arXiv

Topological phases of a dimerized Fermi-Hubbard model for semiconductor nano-lattices

Motivated by recent advances in fabricating artificial lattices in semiconductors and their promise for quantum simulation of topological materials, we study the one-dimensional dimerized Fermi-Hubbard model. We show how the topological phases at half-filling can be characterized by a reduced Zak phase defined based on the reduced density matrix of each spin subsystem. Signatures of bulk-boundary correspondence are observed in the triplon excitation of the bulk and the edge states of uncoupled spins at the boundaries. At quarter-filling we show that owing to the presence of the Hubbard interaction the system can undergo a transition to the topological ground state of the non-interacting Su-Schrieffer-Heeger model with the application of a moderate-strength external magnetic field. We propose a robust experimental realization with a chain of dopant atoms in silicon or gate-defined quantum dots in GaAs where the transition can be probed by measuring the tunneling current through the many-body state of the chain.

preprint2016arXiv

Channels of oxygen diffusion in single crystal rubrene revealed

Electronic devices made from organic materials have the potential to support a more ecologically friendly and affordable future. However, the ability to fabricate devices with well-defined and reproducible electrical and optical properties is hindered by the sensitivity to the presence of chemical impurities. Oxygen in particular is an impurity that can trap electrons and modify conductive properties of some organic materials. Until now the 3-dimensional profiling of oxygen species in organic semiconductors has been elusive and the effect of oxygen remains disputed. In this study we map out high-spatial resolution 3-dimensional distributions of oxygen inclusions near the surface of single crystal rubrene, using Time of Flight Secondary Ion Mass Spectroscopy (TOF-SIMS). Channels of diffused oxygen, 'oxygen pillars', are found extending from uniform oxygen inclusion layers at the surface. These pillars extend to depths in excess of 1.8 μm and act as an entry point for oxygen to diffuse along the ab-plane of the crystal with at least some of the diffused oxygen molecularly binding to rubrene. Our investigation of surfaces at different stages of evolution reveals the extent of oxygen inclusion, which affects rubrene's optical and transport properties, and is consequently of importance for the reliability and longevity of devices.

preprint2013arXiv

Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy

We study sub-surface arsenic dopants in a hydrogen terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant related features that fall into two classes, which we call As1 and As2. When imaged in occupied states the As1 features appear as anisotropic protrusions superimposed on the silicon surface topography, and have maximum intensities lying along particular crystallographic orientations. In empty-state images the features all exhibit long-range circular protrusions. The images are consistent with buried dopants that are in the electrically neutral (D0) charge state when imaged in filled states, but become positively charged (D+) through electrostatic ionisation when imaged under empty state conditions, similar to previous observations of acceptors in GaAs. Density functional theory (DFT) calculations predict that As dopants in the third layer of the sample induce two states lying just below the conduction band edge, which hybridize with the surface structure creating features with the surface symmetry consistent with our STM images. The As2 features have the surprising characteristic of appearing as a protrusion in filled state images and an isotropic depression in empty state images, suggesting they are negatively charged at all biases. We discuss the possible origins of this feature.