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Researcher profile

Christian Kloc

Christian Kloc contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.chem-ph

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Published work

5 published item(s)

preprint2016arXiv

Channels of oxygen diffusion in single crystal rubrene revealed

Electronic devices made from organic materials have the potential to support a more ecologically friendly and affordable future. However, the ability to fabricate devices with well-defined and reproducible electrical and optical properties is hindered by the sensitivity to the presence of chemical impurities. Oxygen in particular is an impurity that can trap electrons and modify conductive properties of some organic materials. Until now the 3-dimensional profiling of oxygen species in organic semiconductors has been elusive and the effect of oxygen remains disputed. In this study we map out high-spatial resolution 3-dimensional distributions of oxygen inclusions near the surface of single crystal rubrene, using Time of Flight Secondary Ion Mass Spectroscopy (TOF-SIMS). Channels of diffused oxygen, 'oxygen pillars', are found extending from uniform oxygen inclusion layers at the surface. These pillars extend to depths in excess of 1.8 μm and act as an entry point for oxygen to diffuse along the ab-plane of the crystal with at least some of the diffused oxygen molecularly binding to rubrene. Our investigation of surfaces at different stages of evolution reveals the extent of oxygen inclusion, which affects rubrene's optical and transport properties, and is consequently of importance for the reliability and longevity of devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Effects of Lower Symmetry and Dimensionality on Raman Spectra in 2D WSe2

We report the observation and interpretation of new Raman peaks in few-layer tungsten diselenide (WSe2), induced by the reduction of symmetry going from 3D to 2D. In general, Raman frequencies in 2D materials follow quite closely the frequencies of corresponding eigenmodes in the bulk. However, while the modes that are Raman active in the bulk are also Raman active in the thin films, the reverse is not always true due to the reduced symmetry in thin films. Here, we predict from group theory and density functional calculations that two intra-layer vibrational modes which are Raman inactive in bulk WSe2 in our experimental configuration become Raman active in thin film WSe2, due to reduced symmetry in thin films. This phenomenon explains the Raman peaks we observe experimentally at ~310 cm-1 and 176 cm-1 in thin film WSe2. Interestingly, the bulk mode at ~310 cm-1 that is Raman inactive can in fact be detected in Raman measurements under specific wavelengths of irradiation, suggesting that in this case, crystal symmetry selection rules may be broken due to resonant scattering. Both theory and experiment indicate that the and modes blue-shift with decreasing thickness, which we attribute to surface effects. Our results shed light on a general understanding of the Raman/IR activities of the phonon modes in layered transition metal dichalcogenide materials and their evolution behavior from 3D to 2D.

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preprint2013arXiv

Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2

Thickness is one of the fundamental parameters that define the electronic, optical, and thermal properties of two-dimensional (2D) crystals. Phonons in molybdenum disulfide (MoS2) were recently found to exhibit unique thickness dependence due to interplay between short and long range interactions. Here we report Raman spectra of atomically thin sheets of WS2 and WSe2 in the mono- to few-layer thickness regime. We show that, similar to the case of MoS2, the characteristic and modes exhibit stiffening and softening with increasing number of layers, respectively, with a small shift of less than 3 cm-1 due to large mass of the atoms. Thickness dependence is also observed in a series of multiphonon bands arising from overtone, combination, and zone edge phonons, whose intensity exhibit significant enhancement in excitonic resonance conditions. Some of these multiphonon peaks are found to be absent only in monolayers. These features provide a unique fingerprint and rapid identification for monolayer flakes.

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preprint2013arXiv

Origin of indirect optical transitions in few-layer MoS2, WS2 and WSe2

It has been well established that single layer MX2 (M=Mo,W and X=S,Se) are direct gap semiconductors with band edges coinciding at the K point in contrast to their indirect gap multilayer counterparts. In few-layer MX2, there are two valleys along the Γ-K line with similar energy. There is little understanding on which of the two valleys forms the conduction band minimum (CBM) in this thickness regime. We investigate the conduction band valley structure in few-layer MX2 by examining the temperature-dependent shift of indirect exciton PL. Hihgly anisotropic thermal expansion of the lattice and corresponding evolution of the band structure result in distinct peak shift for indirect transitions involving the K and Λ (midpoint along Γ-K) valleys. We identify the origin of the indirect emission and concurrently determine the relative energy of these valleys. Our results show that the two valleys compete in energy in few-layer WSe2.

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preprint2012arXiv

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion with decreasing layer thickness. Molybdenum disulphide (MoS2) was recently found to exhibit indirect to direct gap transition when the thickness is reduced to a single monolayer. This leads to remarkable enhancement in the photoluminescence efficiency, which opens up new opportunities for the optoelectronic applications of the material. Here we report differential reflectance and photoluminescence (PL) spectra of mono- to few-layer WS2 and WSe2 that indicate that the band structure of these materials undergoes similar indirect to direct transition when thinned to a single monolayer. Strong enhancement in PL quantum yield is observed for monoayer WS2 and WSe2 due to exciton recombination at the direct band edge. In contrast to natural MoS2 crystals extensively used in recent studies, few-layer WS2 and WSe2 show comparatively strong indirect gap emission along with distinct direct gap hot electron emission, suggesting high quality of synthetic crystals prepared by chemical vapor transport method. Fine absorption and emission features and their thickness dependence suggest strong effect of Se p-orbitals on the d electron band structure as well as interlayer coupling in WSe2.

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