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Naoki Shirakawa

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cond-mat.str-el cond-mat.supr-con

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preprint2016arXiv

Optical, transport and magnetic properties of new compound CeCd3P3

We have found that CeCd $_{3}$ P $_{3}$ crystallizes into a hexagonal ScAl $_{3}$ C $_{3}$ -type structure. The optical, transport and magnetic properties of CeCd $_{3}$ P $_{3}$ were investigated by measuring the diffuse reflectance, electrical resistivity and magnetization. CeCd $_{3}$ P $_{3}$ is a semiconductor with the fundamental band gap of approximately 0.75 eV. The 4 $f$ electrons of Ce $^{3+}$ ions are well localized but do not show long range order down to 0.48 K, presumably due to the geometrical frustration of Ce atoms. The magnetic ordering temperature is possibly lower than that of isostructural CeZn $_{3}$ P $_{3}$ (0.75 K). Because several $f$ -electron compounds with the ScAl $_{3}$ C $_{3}$ -type structure are quantum spin systems, CeCd $_{3}$ P $_{3}$ may be a candidate of quantum spin liquid. On the other hand, the relatively large band gap compared to approximately 0.4 eV in CeZn $_{3}$ P $_{3}$ , would not be intimate with the observation of photoinduced Kondo effect, providing a potentially new range of applications of devices based on the Kondo effect.

preprint2015arXiv

Pressure Effects on Superconducting Properties of the BiS2-Based Superconductor Bi2(O,F)S2

Pressure effects on a recently discovered BiS2-based superconductor Bi2(O,F)S2 (Tc = 5.1 K) were examined via two different methods; high pressure resistivity measurement and high pressure annealing. The effects of these two methods on the superconducting properties of Bi2(O,F)S2 were significantly different although in both methods hydrostatic pressure is applied to the sample by the cubic-anvil-type apparatus. In high pressure resistivity measurement, Tc linearly decreased at the rate of -1.2 K GPa-1. In contrast, the Tc of 5.1 K is maintained after high pressure annealing under 2 GPa and 470°C of optimally doped sample despite significant change of lattice parameters. In addition, superconductivity was observed in fluorine-free Bi2OS2 after high pressure annealing. These results suggest that high pressure annealing would cause a unique effect on physical properties of layered compounds.

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