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Naoki Shikama

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2 publications

preprint2020arXiv

Enhancement of superconducting transition temperature in electrochemically etched FeSe/LaAlO3_3 films

In this study, we investigated the gate voltage dependence of TcT_{\mathrm c} in electrochemically etched FeSe films with an electric-double layer transistor structure. The TczeroT_{\mathrm c}^{\mathrm {zero}} value of the etched FeSe films with a lower gate voltage (VgV_{\mathrm g} = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhanced TcT_{\mathrm c} remains unchanged even after the discharge process, unlike the results for electrostatic doping without an etching process. Our results suggest that the origin of the increase in TcT_{\mathrm c} is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films.

preprint2019arXiv

Close correlation between superconducting transition temperatures and carrier densities in Te- and S-substituted FeSe thin films

We comparatively investigated the transport properties for S- and Te-substituted FeSe thin films under magnetic fields to clarify the origin of the contrasting behavior of the superconducting transition temperature in S and Te substitution. A classical two carrier analysis revealed that the carrier densities of the films increased with increasing Te content, while no significant change was observed for the S-substitution. This composition dependence of the carrier density well corresponds to the TcT_{\mathrm c} behavior. The clear correlation between TcT_{\mathrm c} and the carrier densities suggests that the structural transition affects the electronic structure in a different manner between Fe(Se,S) and Fe(Se,Te) and that this fact is the direct cause of the difference in the TcT_{\mathrm c} behaviors at the end point of the structural transition.

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