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Nan Niu

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physics.optics cond-mat.mtrl-sci quant-ph Software Engineering

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preprint2021arXiv

Extracting Concise Bug-Fixing Patches from Human-Written Patches in Version Control Systems

High-quality and large-scale repositories of real bugs and their concise patches collected from real-world applications are critical for research in software engineering community. In such a repository, each real bug is explicitly associated with its fix. Therefore, on one side, the real bugs and their fixes} may inspire novel approaches for finding, locating, and repairing software bugs; on the other side, the real bugs and their fixes are indispensable for rigorous and meaningful evaluation of approaches for software testing, fault localization, and program repair. To this end, a number of such repositories, e.g., Defects4J, have been proposed. However, such repositories are rather small because their construction involves expensive human intervention. Although bug-fixing code commits as well as associated test cases could be retrieved from version control systems automatically, existing approaches could not yet automatically extract concise bug-fixing patches from bug-fixing commits because such commits often involve bug-irrelevant changes. In this paper, we propose an automatic approach, called BugBuilder, to extracting complete and concise bug-fixing patches from human-written patches in version control systems. It excludes refactorings by detecting refactorings involved in bug-fixing commits, and reapplying detected refactorings on the faulty version. It enumerates all subsets of the remaining part and validates them on test cases. If none of the subsets has the potential to be a complete bug-fixing patch, the remaining part as a whole is taken as a complete and concise bug-fixing patch. Evaluation results on 809 real bug-fixing commits in Defects4J suggest that BugBuilder successfully generated complete and concise bug-fixing patches for forty percent of the bug-fixing commits, and its precision (99%) was even higher than human experts.

preprint2014arXiv

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities

Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems, but also shed insight into the more fundamental issues of light matter coupling in such systems.

preprint2012arXiv

A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity

Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is proposed as the driving force for the observed shift in WGMs, and is supported by experiments. The tuning for GaN/InGaN microdisk cavities is an important step for deterministically realizing novel nanophotonic devices for studying cavity quantum electrodynamics.

preprint2011arXiv

Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities

Controlled tuning of the whispering gallery modes of GaN/InGaN μ-disk cavities is demonstrated. The whispering gallery mode (WGM) tuning is achieved at room temperature by immersing the μ-disks in water and irradiating with ultraviolet (UV) laser. The tuning rate can be controlled by varying the laser excitation power, with a nanometer precision accessible at low excitation power (~ several μW). The selective oxidation mechanism is proposed to explain the results and supported by theoretical analysis. The tuning of WGMs in GaN/InGaN μ-disk cavities may have important implication in cavity quantum electrodynamics and the development of efficient light emitting devices.