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Nadezhda Kukharchyk

Nadezhda Kukharchyk contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Microwave cavity-free hole burning spectroscopy of Er$^{3+}$:Y$_2$SiO$_5$ at millikelvin temperatures

Efficient quantum memory is of paramount importance for long-distance quantum communications, as well as for complex large-scale computing architectures. We investigate the capability of Er$^{3+}$:Y$_2$SiO$_5$ crystal to serve as a quantum memory for the travelling microwave photons by employing techniques developed for dense optical ensembles. In our efforts to do so, we have performed high-resolution microwave spectroscopy of Er$^{3+}$:Y$_2$SiO$_5$, where we identified electronic spin as well as hyperfine transitions. Furthermore, we have explored spectral hole burning technique and studied the spin relaxation process at millikelvin temperatures, determined the main relaxation mechanisms, which lay the groundwork for further studies of the topic.

preprint2014arXiv

Photoluminescence of focused ion beam implanted Er$^{3+}$:Y$_{2}$SiO$_{5}$ crystals

Erbium doped low symmetry Y$_2$SiO$_5$ crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping density. In the present work, we deposit Er$^{3+}$-ions by the focused ion beam technique at Yttrium sites with several fluences in one sample. With a photoluminescence study of these locally doped Er$^{3+}$:Y$_2$SiO$_5$ crystals, we are able to evaluate the efficiency of the implantation process and develop it for the highest efficiency possible. We observe the dependence of the ion activation after the post-implantation annealing on the fluence value.