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Nadezhda Kukharchyk

Nadezhda Kukharchyk appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mes-hallcond-mat.mtrl-sciquant-phgr-qcphysics.ins-det

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Published work

9 published item(s)

preprint2022arXiv

Microwave cavity-free hole burning spectroscopy of Er$^{3+}$:Y$_2$SiO$_5$ at millikelvin temperatures

Efficient quantum memory is of paramount importance for long-distance quantum communications, as well as for complex large-scale computing architectures. We investigate the capability of Er$^{3+}$:Y$_2$SiO$_5$ crystal to serve as a quantum memory for the travelling microwave photons by employing techniques developed for dense optical ensembles. In our efforts to do so, we have performed high-resolution microwave spectroscopy of Er$^{3+}$:Y$_2$SiO$_5$, where we identified electronic spin as well as hyperfine transitions. Furthermore, we have explored spectral hole burning technique and studied the spin relaxation process at millikelvin temperatures, determined the main relaxation mechanisms, which lay the groundwork for further studies of the topic.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Development of Yttrium alloy ion source and its application in nanofabrication

We present a new YAuSi Liquid Metal Alloy Ion Source (LMAIS), generating focused ion beams of yttrium ions, and its prospective applications for nanofabrication, sample preparation, lithographic and implantation processes. Working parameters of the AuSiY LMAIS are similar to other gold-silicon based LMAIS. We found anomalously high emission current of triple charged Yttrium ions. Influence of Yttrium implantation on optical qualities of the implanted ion-ensembles is shown in luminescence of co-implanted Erbium ions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Single electron relativistic clock interferometer

Although time is one of the fundamental notions in physics, it does not have a unique description. In quantum theory time is a parameter ordering the succession of the probability amplitudes of a quantum system, while according to relativity theory each system experiences in general a different proper time, depending on the system's world line, due to time to time dilation. It is therefore of fundamental interest to test the notion of time in the regime where both quantum and relativistic effects play a role, for example, when different amplitudes of a single quantum clock experience different magnitudes of time dilation. Here we propose a realization of such an experiment with a single electron in a Penning trap. The clock can be implemented in the electronic spin precession and its time dilation then depends on the radial (cyclotron) state of the electron. We show that coherent manipulation and detection of the electron can be achieved already with present day technology. A single electron in a Penning trap is a technologically ready platform where the notion of time can be probed in a hitherto untested regime, where it requires a relativistic as well as quantum description.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

All-optical preparation of coherent dark states of a single rare earth ion spin in a crystal

All-optical addressing and control of single solid-state based qubits allows for scalable architectures of quantum devices such as quantum networks and quantum simulators. So far, all-optical addressing of qubits was demonstrated only for color centers in diamond and quantum dots. Here, we demonstrate generation of coherent dark state of a single rare earth ion in a solid, namely a cerium ion in yttrium aluminum garnet (YAG). The dark state was formed under the condition of coherent population trapping. Furthermore, high-resolution spectroscopic studies of native and implanted single Ce ions have been performed. They revealed narrow and spectrally stable optical transitions between the spin sublevels of the ground and excited optical states, indicating the feasibility of interfacing single photons with a single electron spin of a cerium ion.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanoscale nonlinear effects in Erbium-implanted Yttrium Orthosilicate

Doping of substrates at desired locations is a key technology for spin-based quantum memory devices. Focused ion beam implantation is well-suited for this task due to its high spacial resolution. In this work, we investigate ion-beam implanted erbium ensembles in Yttrium Orthosilicate crystals by means of confocal photoluminescence spectroscopy. The sample temperature and the post-implantation annealing step strongly reverberate in the properties of the implanted ions. We find that hot implantation leads to a higher activation rate of the ions. At high enough fluences, the relation between the fluence and final concentration of ions becomes non-linear. Two models are developed explaining the observed behaviour.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Production yield of rare-earth ions implanted into an optical crystal

Rare-earth ions doped into desired locations of optical crystals might enable a range of novel integrated photonic devices for quantum applications. With this aim, we have investigated the production yield of cerium and praseodymium by means of ion implantation. As a measure, the collected fluorescence intensity from both, implanted samples and single centers was used. With a tailored annealing procedure for cerium, a yield up to 53% was estimated. Praseodymium yield amounts up to 91%.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Strong Coupling of Intersubband Resonance in a High Electron Mobility Transistor Structure to a THz Metamaterial by Ultrawide Electrical Tuning

The interaction between intersubband resonances (ISRs) and metamaterial microcavities can form a strongly coupled system where new resonances form that depend on the coupling strength. Here we present experimental evidence of strong coupling between the cavity resonance of a THz metamaterial and the ISR in a high electron mobility transistor structure with a triangular confinement. The device is electrically switched from an uncoupled to a strongly coupled regime by tuning the ISR with epitaxially grown transparent gates. An asymmetric triangular potential in the heterostructure enables ultrawide electrical tuning of ISR which is an order of magnitude higher as compared to the equivalent square well. For a single triangular well, we achieve a coupling strength of 0.52 THz, with a normalized coupling ratio of 0.26.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Infrared transmission spectroscopy of charge carriers in self-assembled InAs quantum dots under surface electric fields

We present a study on the intersublevel spacings of electrons and holes in a single layer of InAs self-assembled quantum dots (SAQDs) using Fourier transform infrared (FTIR) transmission spectroscopy without the application of an external magnetic field. Epitaxial, complementary-doped and semi-transparent electrostatic gates are grown within the ultra high vacuum conditions of molecular beam epitaxy to voltage-tune the device, while a two dimensional electron gas (2DEG) serves as back contact. Spacings of the hole sublevels are indirectly calculated using the photoluminescence spectroscopy along with FTIR spectroscopy. The observed spacings fit well to the calculated values for both electrons and holes. Additionally, the intersubband resonances of the 2DEG are enhanced due to the QD layer on top of the device.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Photoluminescence of focused ion beam implanted Er$^{3+}$:Y$_{2}$SiO$_{5}$ crystals

Erbium doped low symmetry Y$_2$SiO$_5$ crystals attract a lot of attention in perspective of quantum information applications. However, only doping of the samples during growth is available up to now, which yields a quite homogeneous doping density. In the present work, we deposit Er$^{3+}$-ions by the focused ion beam technique at Yttrium sites with several fluences in one sample. With a photoluminescence study of these locally doped Er$^{3+}$:Y$_2$SiO$_5$ crystals, we are able to evaluate the efficiency of the implantation process and develop it for the highest efficiency possible. We observe the dependence of the ion activation after the post-implantation annealing on the fluence value.

0 citations0 reviewsNo code linkedOpen access