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N. Salovich

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4 publications

preprint2013arXiv

Nodal superconductivity in isovalently substituted SrFe2_2(As1−x_{1-x}Px_{x})2_2 pnictide superconductor at the optimal doping, x=x=0.35

Temperature-dependent London penetration depth, λ(T)λ(T), was measured in optimally - doped, x=x=0.35, as-grown (Tc≈T_c \approx25 K, RRR=ρ(300K)/ρ(Tc)ρ(300K)/ρ(T_c)=4.5) and annealed (Tc≈T_c \approx35 K, RRR=6.4) single crystals of SrFe2_2(As1−x_{1-x}Px_{x})2_2 iron - based superconductor. Annealing increases the RRR and decreases the absolute value of the London penetration depth from λ(0)=300±10λ(0) = 300 \pm 10 nm in as-grown sample to λ(0)=275±10λ(0) = 275 \pm 10 nm. At low temperatures, λ(T)∼Tλ(T) \sim T indicating superconducting gap with line nodes. Analysis of the full - temperature range superfluid density is consistent with the line nodes, but differs from the simple single - gap d−d-wave. The observed behavior is very similar to that of BaFe2_2(As1−x_{1-x}Px_{x})2_2, showing that isovalently substituted pnictides are inherently different from the charge - doped materials.

preprint2012arXiv

A Sharp Peak of the Zero-Temperature Penetration Depth at Optimal Composition in BaFe2(As1-xPx)2

In a superconductor, the ratio of the carrier density, nn, to their effective mass, m∗m^*, is a fundamental property directly reflecting the length scale of the superfluid flow, the London penetration depth, λLλ_L. In two dimensional systems, this ratio n/m∗n/m^* (∼1/λL2\sim 1/λ_L^2) determines the effective Fermi temperature, TFT_F. We report a sharp peak in the xx-dependence of λLλ_L at zero temperature in clean samples of BaFe2_2(As1−x_{1-x}Px_x)2_2 at the optimum composition x=0.30x = 0.30, where the superconducting transition temperature TcT_c reaches a maximum of 30\,K. This structure may arise from quantum fluctuations associated with a quantum critical point (QCP). The ratio of Tc/TFT_c/T_F at x=0.30x = 0.30 is enhanced, implying a possible crossover towards the Bose-Einstein condensate limit driven by quantum criticality.

preprint2010arXiv

Doping evolution of the absolute value of the London penetration depth and superfluid density in single crystals of Ba(Fe1−x_{1-x}Cox_x)2_2As2_2

The zero temperature value of the in-plane London penetration depth, λab(0)λ_{ab}(0), has been measured in single crystals of Ba(Fe1−x_{1-x}Cox_x)2_2As2_2 as a function of the Co concentration, xx, across both the underdoped and overdoped superconducting regions of the phase diagram. For x≳0.047x\gtrsim0.047, λab(0)λ_{ab}(0) has been found to have values between 120 ±\pm 50~nm and 300 ±\pm 50~nm. A pronounced increase in λab(0)λ_{ab}(0), to a value as high as 950 ±\pm 50~nm, has been observed for x≲0.047x\lesssim0.047, corresponding to the region of the phase diagram where the itinerant antiferromagnetic and superconducting phases coexist and compete. Direct determination of the doping-dependent λab(0)λ_{ab}(0) has allowed us to track the evolution of the temperature-dependent superfluid density, from which we infer the development of a pronounced superconducting gap anisotropy at the edges of the superconducting dome.

preprint2010arXiv

London penetration depth and superfluid density in single crystals of Fe(Te,Se) and Fe(Te,S) superconductors

The in-plane London penetration depth, λ(T)λ(T), was measured in single crystals of the iron-chalcogenide superconductors Fe1.03_{1.03}(Te0.63_{0.63}Se0.37_{0.37}) and Fe1.06_{1.06}(Te0.88_{0.88}S0.14_{0.14}) by using a radio-frequency tunnel diode resonator. As is also the case for the iron-pnictides, these iron-chalcogenides exhibit a nearly quadratic temperature variation of λ(T)λ(T) at low temperatures. The absolute value of the penetration depth in the T→0T \to 0 limit was determined for Fe1.03_{1.03}(Te0.63_{0.63}Se0.37)_{0.37}) by using an Al coating technique, giving λ(0)≈560±20λ(0)\approx560 \pm 20 nm. The superfluid density ρs(T)=λ2(0)/λ2(T)ρ_s(T)=λ^2(0)/λ^2(T) was fitted with a self-consistent two-gap γ−γ-model. While two different gaps are needed to describe the full-range temperature variation of ρs(T)ρ_s(T), a non-exponential behavior at low temperatures requires additional factors, such as scattering and/or significant gap anisotropy.

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