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Researcher profile

N. S. Averkiev

N. S. Averkiev contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.othercond-mat.mtrl-sciphysics.opticsquant-ph

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Published work

9 published item(s)

preprint2022arXiv

Shot noise in resonant tunneling: Role of inelastic scattering

We study the influence of inelastic processes on shot noise and the Fano factor for a one-dimensional double-barrier structure, where resonant tunneling takes place between two terminals. Most studies to date have found, by means of various approximate or phenomenological methods, that shot noise is insensitive to dephasing caused by inelastic scattering. In this paper, we explore the status of this statement by deriving a general Landaur-Büttiker-type formula that expresses the current noise and Fano factor in a one-dimensional conductor through inelastic scattering amplitudes. For a double-barrier structure, exact scattering amplitudes are calculated in the presence of a time-dependent potential. As an example of dephasing potential, we consider the one induced by equilibrium phonons. We calculate transmission coefficients of a double-barrier structure for these two types of phonon-induced dephasing. In the case of diffusive phase relaxation valid for one dimension phonons, the resonant level has a Lorentzian shape. For phonons whith high dimensions logarithmic dephasing realized which leads to an unusual shape of the size-quantized level characterized by the two energy scales. We further calculate the Fano factor for these types of dephasing, using exact expressions for inelastic transmission and reflection amplitudes. It turned out that when an integer number of levels fall into the energy window of width eV, where V is the voltage applied to the structure, the Fano factor is really insensitive to inelastic processes inside the structure and coincides with the prediction of phenomenological models with an accuracy of small corrections depending on these processes. On the contrary, at low voltages, when the eV window is smaller than the level width, this dependence is particularly pronounced and the phenomenological formula does not work.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dissipative phase transition in systems with two-photon drive and nonlinear dissipation near the critical point

We study dissipative phase transition near the critical point for a system with two-photon driving and nonlinear dissipation. The proposed mean-field theory, which explicitly takes into account quantum fluctuations, allowed us to describe properly the evolution dynamics of the system and to demonstrate the new effects in the steady-state. We show that the presence of quantum fluctuations leads to a power-law dependence of the anomalous average at the phase transition point, with which the critical exponent is associated. Also, we investigate the effect of the quantum fluctuations on the critical point renormalization and demonstrate the existence of a two-photon pump threshold. It is noteworthy that the obtained results are in a good agreement with the numerical simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fingerprints of the electron skew-scattering on paramagnetic impurities in semiconductor systems

In this paper we argue that the electron skew-scattering on paramagnetic impurities in non-magnetic systems, such as bulk semiconductors, possesses a remarkable fingerprint allowing to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and mobile electrons leads to the emergence of an electric Hall current persisting even at zero electron spin polarization. We describe two microscopic mechanisms behind this effect, namely the exchange interaction assisted skew-scattering and the conversion of the SHE induced transverse spin current to the charge one owing to the difference between the spin-up and spin-down conductivities. We propose an essentially all-electric scheme based on a spin-injection ferromagnetic-semiconductor device which allows one to reveal the effect of paramagnetic impurities on the Hall phenomena via the detection of the spin polarization independent terms in the Hall voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Sign-reversal electron magnetization in Mn-doped semiconductor structures

The diversity of various manganese types and its complexes in the Mn-doped ${\rm A^{III}B^V}$ semiconductor structures leads to a number of intriguing phenomena. Here we show that the interplay between the ordinary substitutional Mn acceptors and interstitial Mn donors as well as donor-acceptor dimers could result in a reversal of electron magnetization. In our all-optical scheme the impurity-to-band excitation via the Mn dimers results in direct orientation of the ionized Mn-donor $d$ shell. A photoexcited electron is then captured by the interstitial Mn and the electron spin becomes parallel to the optically oriented $d$ shell. That produces, in the low excitation regime, the spin-reversal electron magnetization. As the excitation intensity increases the capture by donors is saturated and the polarization of delocalized electrons restores the normal average spin in accordance with the selection rules. A possibility of the experimental observation of the electron spin reversal by means of polarized photoluminescence is discussed.

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preprint2019arXiv

Chiral spin structure of electron gas in systems with magnetic skyrmions

The theoretical study considers chiral spin texture induced in a 2D electron gas (2DEG) by magnetic skyrmions. We calculate the electron gas spin density as a linear response to the exchange interaction between the 2DEG and the magnetization field of a magnetic skyrmion. Two physically distinct regimes occur. When the size of the skyrmion is larger than the inverse Fermi wavevector $k_F^{-1}$, the spin density response follows the magnetization profile of the skyrmion. In the opposite case of a small skyrmion the emerging spin structure of 2DEG has a characteristic size of $k_F^{-1}$ and the response becomes non-local, it can be viewed as chiral Friedel oscillations. At that, the emerging spin structure of the oscillations appears to be more complex than that of the skyrmion itself.

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preprint2013arXiv

Resonant exchange interaction in semiconductors

We present a non-perturbative calculation of indirect exchange interaction between two paramagnetic impurities via 2D free carriers gas separated by a tunnel barrier. The new method accounts for the impurity attractive potential producing a bound state. The calculations show that for if the bound impurity state energy lies within the energy range occupied by the free 2D carriers the indirect exchange interaction is strongly enhanced due to resonant tunneling and exceeds by a few orders of magnitude what one would expect from the conventional RKKY approach.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Resonant photonic crystals and quasicrystals based on highly doped quantum-well structures

A theory of light propagation through one-dimensional photonic crystals and deterministic aperiodic structures, including quasicrystals, based on doped quantum-well structures has been developed. The resonant Bragg condition, leading to the superradiant regime and formation of the widest optical reflection spectrum, has been formulated. The expressions for band gap edges for light waves in the Bragg structures have been obtained. The reflection and absorption spectra of such systems are calculated. The optical properties of the doped multiple-quantum-well structure are compared with the properties of undoped ones.

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preprint2006arXiv

Linear polarization of the photoluminescence of quantum wells

The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of detection photon energy, applied magnetic field strength and orientation in the quantum well plane. A theoretical description of this effect in terms of an in-plane deformation acting on the valence band states is presented and is verified by comparison with the experimental data. We attempted to identify clues to the microscopic origin of the valence band spin anisotropy and to the mechanisms which actually determine the linear polarization of the PL in the quantum wells subject to the in-plane magnetic field. The conclusions of the present paper apply in full measure to non-magnetic QWs as well as ensembles of disk-like QDs with shape and/or strain anisotropy.

0 citations0 reviewsNo code linkedOpen access