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Source author record

N. S. Averkiev

N. S. Averkiev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.othercond-mat.mtrl-sciquant-phcond-mat.dis-nnphysics.optics

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Published work

23 published item(s)

preprint2022arXiv

Shot noise in resonant tunneling: Role of inelastic scattering

We study the influence of inelastic processes on shot noise and the Fano factor for a one-dimensional double-barrier structure, where resonant tunneling takes place between two terminals. Most studies to date have found, by means of various approximate or phenomenological methods, that shot noise is insensitive to dephasing caused by inelastic scattering. In this paper, we explore the status of this statement by deriving a general Landaur-Büttiker-type formula that expresses the current noise and Fano factor in a one-dimensional conductor through inelastic scattering amplitudes. For a double-barrier structure, exact scattering amplitudes are calculated in the presence of a time-dependent potential. As an example of dephasing potential, we consider the one induced by equilibrium phonons. We calculate transmission coefficients of a double-barrier structure for these two types of phonon-induced dephasing. In the case of diffusive phase relaxation valid for one dimension phonons, the resonant level has a Lorentzian shape. For phonons whith high dimensions logarithmic dephasing realized which leads to an unusual shape of the size-quantized level characterized by the two energy scales. We further calculate the Fano factor for these types of dephasing, using exact expressions for inelastic transmission and reflection amplitudes. It turned out that when an integer number of levels fall into the energy window of width eV, where V is the voltage applied to the structure, the Fano factor is really insensitive to inelastic processes inside the structure and coincides with the prediction of phenomenological models with an accuracy of small corrections depending on these processes. On the contrary, at low voltages, when the eV window is smaller than the level width, this dependence is particularly pronounced and the phenomenological formula does not work.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dissipative phase transition in systems with two-photon drive and nonlinear dissipation near the critical point

We study dissipative phase transition near the critical point for a system with two-photon driving and nonlinear dissipation. The proposed mean-field theory, which explicitly takes into account quantum fluctuations, allowed us to describe properly the evolution dynamics of the system and to demonstrate the new effects in the steady-state. We show that the presence of quantum fluctuations leads to a power-law dependence of the anomalous average at the phase transition point, with which the critical exponent is associated. Also, we investigate the effect of the quantum fluctuations on the critical point renormalization and demonstrate the existence of a two-photon pump threshold. It is noteworthy that the obtained results are in a good agreement with the numerical simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fingerprints of the electron skew-scattering on paramagnetic impurities in semiconductor systems

In this paper we argue that the electron skew-scattering on paramagnetic impurities in non-magnetic systems, such as bulk semiconductors, possesses a remarkable fingerprint allowing to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and mobile electrons leads to the emergence of an electric Hall current persisting even at zero electron spin polarization. We describe two microscopic mechanisms behind this effect, namely the exchange interaction assisted skew-scattering and the conversion of the SHE induced transverse spin current to the charge one owing to the difference between the spin-up and spin-down conductivities. We propose an essentially all-electric scheme based on a spin-injection ferromagnetic-semiconductor device which allows one to reveal the effect of paramagnetic impurities on the Hall phenomena via the detection of the spin polarization independent terms in the Hall voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Sign-reversal electron magnetization in Mn-doped semiconductor structures

The diversity of various manganese types and its complexes in the Mn-doped ${\rm A^{III}B^V}$ semiconductor structures leads to a number of intriguing phenomena. Here we show that the interplay between the ordinary substitutional Mn acceptors and interstitial Mn donors as well as donor-acceptor dimers could result in a reversal of electron magnetization. In our all-optical scheme the impurity-to-band excitation via the Mn dimers results in direct orientation of the ionized Mn-donor $d$ shell. A photoexcited electron is then captured by the interstitial Mn and the electron spin becomes parallel to the optically oriented $d$ shell. That produces, in the low excitation regime, the spin-reversal electron magnetization. As the excitation intensity increases the capture by donors is saturated and the polarization of delocalized electrons restores the normal average spin in accordance with the selection rules. A possibility of the experimental observation of the electron spin reversal by means of polarized photoluminescence is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Chiral spin structure of electron gas in systems with magnetic skyrmions

The theoretical study considers chiral spin texture induced in a 2D electron gas (2DEG) by magnetic skyrmions. We calculate the electron gas spin density as a linear response to the exchange interaction between the 2DEG and the magnetization field of a magnetic skyrmion. Two physically distinct regimes occur. When the size of the skyrmion is larger than the inverse Fermi wavevector $k_F^{-1}$, the spin density response follows the magnetization profile of the skyrmion. In the opposite case of a small skyrmion the emerging spin structure of 2DEG has a characteristic size of $k_F^{-1}$ and the response becomes non-local, it can be viewed as chiral Friedel oscillations. At that, the emerging spin structure of the oscillations appears to be more complex than that of the skyrmion itself.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Numerical adiabatic potentials of orthorhombic Jahn-Teller effects retrieved from ultrasound attenuation experiments. Application to the SrF2:Cr crystal

A methodology is worked out to retrieve the numerical values of all the main parameters of the six-dimensional adiabatic potential energy surface (APES) of a polyatomic system with a quadratic T-term Jahn-Teller effect (JTE) from ultrasound experiments. The method is based on a verified assumption that ultrasound attenuation and speed encounter anomalies when the direction of propa- gation and polarization of its wave of strain coincides with the characteristic directions of symmetry breaking in the JTE. For the SrF2:Cr crystal, employed as a basic example, we observed anomaly peaks in the temperature dependence of attenuation of ultrasound at frequencies of 50-160 MHz in the temperature interval of 40-60 K for the wave propagating along the [110] direction, for both the longitudinal and shear modes, the latter with two polarizations along the [001] and [110] axes, respectively. We show that these anomalies are due to the ultrasound relaxation by the system of non-interacting Cr2+ JT centers with orthorhombic local distortions. The interpretation of the ex- perimental findings is based on the T2g (eg +t2g) JTE problem including the linear and quadratic terms of vibronic interactions in the Hamiltonian and the same-symmetry modes reduced to one interaction mode. Combining the experimental results with a theoretical analysis we show that on the complicated six-dimensional APES of this system with three tetragonal, four trigonal, and six orthorhombic extrema points, the latter are global minima, while the former are saddle points, and we estimate numerically all the main parameters of this surface, including the linear and quadratic vibronic coupling constants, the primary force constants, the coordinates of all the extrema points and their energies, the energy barrier between the orthorhombic minima, and the tunneling splitting of the ground vibrational states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation

The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the impurity-to-band excitation and observe a sign inversion of the luminescence polarization depending on the pump power. The g factor of a hole localized on the Mn acceptor in the quantum well was also found to be considerably modified from its bulk value due to the quantum confinement effect. This finding shows the importance of the local environment on magnetic properties of the dopants in semiconductor nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optical spectroscopy of single beryllium acceptors in GaAs/AlGaAs quantum well

We carry out microphotoluminescence measurements of an acceptor-bound exciton (A^0X) recombination in the applied magnetic field with a single impurity resolution. In order to describe the obtained spectra we develop a theoretical model taking into account a quantum well (QW) confinement, an electron-hole and hole-hole exchange interaction. By means of fitting the measured data with the model we are able to study the fine structure of individual acceptors inside the QW. The good agreement between our experiments and the model indicates that we observe single acceptors in a pure two-dimensional environment whose states are unstrained in the QW plain.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Phenomenological theory of optical broadening in zero-dimensional systems applied to silicon nanocrystals

We develop a phenomenological theory of inhomogeneous broadening in zero-dimensional systems and apply it to study photoluminescence (PL) spectra of silicon nanocrystals measured at helium and room temperatures. The proposed approach allowed us to explain experimentally observed PL peak asymmetry, linear dependence of the peak width on its maximum and anomalous alteration of spectral characteristics with temperature increase.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Scattering on magnetic skyrmion in the non-adiabatic approximation

We present a theory of electron scattring on a magnetic skyrmion for the case when exchange interaction is moderate so that adiabatic approximation and Berry phase approach is not applicable. The theory explains the appearance of a topological Hall current in the systems with magnetic skyrmions, of a special importance its applicability to dilute magnetic semiconductors with a weak exchange interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Resonant 2D-2D tunneling with account for spin-orbit interaction

We present a theory of quantum tunneling between 2D layers with account for Rashba and Dresselhaus spin-orbit interaction (SOI) in the layers. Energy and momentum conservation results in a single resonant peak in the tunnel conductance between two 2D layers as has been experimentally observed for two quantum wells (QW) in GaAs/AlGaAs heterostructures. The account for SOI in the layers leads to a complex pattern in the tunneling characteristic with typical features corresponding to SOI energy. For this manifestation of SOI to be observed experimentally the characteristic energy should exceed the resonant broadening related to the particles quantum lifetime in the layers. We perform an accurate analysis of the known experimental data on electron and hole 2D-2D tunneling in AlGaAs/GaAs heterostructures. It appears that for the electron tunneling the manifestation of SOI is difficult to observe, but for the holes tunneling the parameters of the real structures used in the experiments are very close to those required by the resolution criteria. We also consider a new promising candidate for the effect to be observed, that is p-doped SiGe strained heterostructures. The reported parameters of cubic Rashba SOI and quantum lifetime in strained Ge QWs fabricated up to date already match the criteria for observing SOI in 2D-2D heavy holes tunneling. As supported by our calculations small adjustments of the parameters for AlGaAs/GaAs p-type QWs or simply designing a 2D-2D tunneling experiment for SiGe case are very likely to reveal the SOI features in the 2D-2D tunneling.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Resonant indirect exchange via remote 2D channel

We apply the previously developed theory of the resonant indirect exchange interaction to explain the ferromagnetic properties of the hybrid heterostructure consisting of a InGaAs-based quantum well (QW) sandwiched between GaAs barriers with a remote Mn delta-layer. The experimentally obtained dependence of the Curie temperature on the QW depth exhibits a maximum related to the region of resonant indirect exchange. We suggest the theoretical explanantion and a fit to this dependence as a result of the two contributions to ferromagnetism - the intralayer contribution and the resonant exchange contribution provided by the QW.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Non-diffusion theory of weak localization in graphene

We put forward a theory of the weak localization in two dimensional graphene layers which explains experimentally observable transition between positive and negative magnetoresistance. Calculations are performed for the whole range of classically weak magnetic field with account on intervalley transitions. Contribution to the quantum correction which stems from closed trajectories with few scatterers is carefully taken into account. We show that intervalley transitions lead not only to the transition from weak antilocalization to the weak localization, but also to the non-monotonous dependence of the conductivity on the magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Resonant exchange interaction in semiconductors

We present a non-perturbative calculation of indirect exchange interaction between two paramagnetic impurities via 2D free carriers gas separated by a tunnel barrier. The new method accounts for the impurity attractive potential producing a bound state. The calculations show that for if the bound impurity state energy lies within the energy range occupied by the free 2D carriers the indirect exchange interaction is strongly enhanced due to resonant tunneling and exceeds by a few orders of magnitude what one would expect from the conventional RKKY approach.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Collective effects in emission of quantum dots strongly coupled to a microcavity photon

A theory of non-linear emission of quantum dot ensembles coupled to the optical mode of the microcavity is presented. Numerical results are compared with analytical approaches. The effects of exciton-exciton interaction within the quantum dots and with the reservoir formed by nonresonant pumping are considered. It is demonstrated, that the nonlinearity due to the interaction strongly affects the shape of the emission spectra. The collective superradiant mode of the excitons is shown to be stable against the non-linear effects.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Tunneling magnetic effect in heterostructures with paramagnetic impurities

An effect of paramagnetic impurity located in a vicinity of a quantum well (QW) on spin polarization of the carriers in the QW is analyzed theoretically. Within approach of Bardeen's tunneling Hamiltonian the problem is formulated in terms of Anderson-Fano model of configuration interaction between a localized hole state at Mn and continuum of heavy hole states in the InGaAs-based QW. The hybridization between the localized state and the QW leads to resonant enhancement of interband radiative recombination. The splitting of the configuration resonances induced by splitting of the localized state in magnetic field results in circular polarization of light emitted from the QW. The developed theory is capable of explaining known experimental results and allows for calculation of the photoluminescence spectra and dependence of integral polarization on temperature and other parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Non-linear emission spectra of quantum dots strongly coupled to photonic mode

A theory of optical emission of quantum dot arrays in quantum microcavities is developed. The regime of the strong coupling between the quantum dots and photonic mode of the cavity is considered. The quantum dots are modeled as two-level systems. In the low pumping (linear) regime the emission spectra are mainly determined by the superradiant mode where the effective dipoles of the dots oscillate in phase. In the non-linear regime the superradiant mode is destroyed and the emission spectra are sensitive to the parity of quantum dot number. Further increase of the pumping results in the line width narrowing being an evidence of the lasing regime.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Resonant photonic crystals and quasicrystals based on highly doped quantum-well structures

A theory of light propagation through one-dimensional photonic crystals and deterministic aperiodic structures, including quasicrystals, based on doped quantum-well structures has been developed. The resonant Bragg condition, leading to the superradiant regime and formation of the widest optical reflection spectrum, has been formulated. The expressions for band gap edges for light waves in the Bragg structures have been obtained. The reflection and absorption spectra of such systems are calculated. The optical properties of the doped multiple-quantum-well structure are compared with the properties of undoped ones.

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preprint2009arXiv

Conversion of hole states by acoustic solitons

The hole states in the valence band of a large class of semiconductors are degenerate in the projections of angular momentum. Here we show that the switching of a hole between the states can efficiently be realized by acoustic solitons. The microscopic mechanism of such a state conversion is related to the valence band splitting by local elastic strain. The conversion is studied here for heavy holes localized at shallow and deep acceptors in silicon quantum wells.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Collective modes of quantum dot ensembles in microcavities

Emission spectra of quantum dot arrays in zero-dimensional microcavities are studied theoretically, and it is shown that they are determined by the competition between the formation of the collective superradiant mode and inhomogeneous broadening. The random sources method for the calculation of photoluminescence spectra under a non-resonant pumping is developed, and a microscopic justification of the random sources method within a framework of the standard diagram technique is given. The emission spectra of a microcavity are analyzed with allowance for the spread of exciton states energies caused by an inhomogeneous distribution of quantum dots and a tunneling between them. It is demonstrated that in the case of a strong tunneling coupling the luminescence spectra are sensitive to the geometric positions of the dots, and the collective mode can, under certain conditions, be stabilized by the random tunnel junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Linear polarization of the photoluminescence of quantum wells

The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of detection photon energy, applied magnetic field strength and orientation in the quantum well plane. A theoretical description of this effect in terms of an in-plane deformation acting on the valence band states is presented and is verified by comparison with the experimental data. We attempted to identify clues to the microscopic origin of the valence band spin anisotropy and to the mechanisms which actually determine the linear polarization of the PL in the quantum wells subject to the in-plane magnetic field. The conclusions of the present paper apply in full measure to non-magnetic QWs as well as ensembles of disk-like QDs with shape and/or strain anisotropy.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells

Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic directions are extracted demonstrating anisotropy of D'yakonov-Perel' spin relaxation mechanism. The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well structures. It is shown that the Rashba spin-orbit splitting is about four times stronger than the Dresselhaus splitting in the studied structure.

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