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I. V. Rozhansky

I. V. Rozhansky appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.othercond-mat.mtrl-sciquant-ph

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Published work

10 published item(s)

preprint2020arXiv

Fingerprints of the electron skew-scattering on paramagnetic impurities in semiconductor systems

In this paper we argue that the electron skew-scattering on paramagnetic impurities in non-magnetic systems, such as bulk semiconductors, possesses a remarkable fingerprint allowing to differentiate it directly from other microscopic mechanisms of the emergent Hall response. We demonstrate theoretically that the exchange interaction between the impurity magnetic moment and mobile electrons leads to the emergence of an electric Hall current persisting even at zero electron spin polarization. We describe two microscopic mechanisms behind this effect, namely the exchange interaction assisted skew-scattering and the conversion of the SHE induced transverse spin current to the charge one owing to the difference between the spin-up and spin-down conductivities. We propose an essentially all-electric scheme based on a spin-injection ferromagnetic-semiconductor device which allows one to reveal the effect of paramagnetic impurities on the Hall phenomena via the detection of the spin polarization independent terms in the Hall voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Chiral spin structure of electron gas in systems with magnetic skyrmions

The theoretical study considers chiral spin texture induced in a 2D electron gas (2DEG) by magnetic skyrmions. We calculate the electron gas spin density as a linear response to the exchange interaction between the 2DEG and the magnetization field of a magnetic skyrmion. Two physically distinct regimes occur. When the size of the skyrmion is larger than the inverse Fermi wavevector $k_F^{-1}$, the spin density response follows the magnetization profile of the skyrmion. In the opposite case of a small skyrmion the emerging spin structure of 2DEG has a characteristic size of $k_F^{-1}$ and the response becomes non-local, it can be viewed as chiral Friedel oscillations. At that, the emerging spin structure of the oscillations appears to be more complex than that of the skyrmion itself.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Scattering on magnetic skyrmion in the non-adiabatic approximation

We present a theory of electron scattring on a magnetic skyrmion for the case when exchange interaction is moderate so that adiabatic approximation and Berry phase approach is not applicable. The theory explains the appearance of a topological Hall current in the systems with magnetic skyrmions, of a special importance its applicability to dilute magnetic semiconductors with a weak exchange interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures

We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field dependences of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds the expected value of the giant Zeeman splitting by two orders of magnitude for a given Mn density. Possible reasons of this striking observation are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Resonant 2D-2D tunneling with account for spin-orbit interaction

We present a theory of quantum tunneling between 2D layers with account for Rashba and Dresselhaus spin-orbit interaction (SOI) in the layers. Energy and momentum conservation results in a single resonant peak in the tunnel conductance between two 2D layers as has been experimentally observed for two quantum wells (QW) in GaAs/AlGaAs heterostructures. The account for SOI in the layers leads to a complex pattern in the tunneling characteristic with typical features corresponding to SOI energy. For this manifestation of SOI to be observed experimentally the characteristic energy should exceed the resonant broadening related to the particles quantum lifetime in the layers. We perform an accurate analysis of the known experimental data on electron and hole 2D-2D tunneling in AlGaAs/GaAs heterostructures. It appears that for the electron tunneling the manifestation of SOI is difficult to observe, but for the holes tunneling the parameters of the real structures used in the experiments are very close to those required by the resolution criteria. We also consider a new promising candidate for the effect to be observed, that is p-doped SiGe strained heterostructures. The reported parameters of cubic Rashba SOI and quantum lifetime in strained Ge QWs fabricated up to date already match the criteria for observing SOI in 2D-2D heavy holes tunneling. As supported by our calculations small adjustments of the parameters for AlGaAs/GaAs p-type QWs or simply designing a 2D-2D tunneling experiment for SiGe case are very likely to reveal the SOI features in the 2D-2D tunneling.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Resonant indirect exchange via remote 2D channel

We apply the previously developed theory of the resonant indirect exchange interaction to explain the ferromagnetic properties of the hybrid heterostructure consisting of a InGaAs-based quantum well (QW) sandwiched between GaAs barriers with a remote Mn delta-layer. The experimentally obtained dependence of the Curie temperature on the QW depth exhibits a maximum related to the region of resonant indirect exchange. We suggest the theoretical explanantion and a fit to this dependence as a result of the two contributions to ferromagnetism - the intralayer contribution and the resonant exchange contribution provided by the QW.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ratchet effect enhanced by plasmons

Ratchet effect -- a {\it dc} current induced by the electromagnetic wave impinging on the spatially modulated two-dimensional (2D) electron liquid -- occurs when the wave amplitude is spatially modulated with the same wave vector as the 2D liquid but is shifted in phase. The analysis within the framework of the hydrodynamic model shows that the ratchet current is dramatically enhanced in the vicinity of the plasmonic resonances and has nontrivial polarization dependence. In particular, for circular polarization, the current component, perpendicular to the modulation direction, changes sign with the inversion of the radiation helicity. Remarkably, in the high-mobility structures, this component might be much larger than the the current component in the modulation direction. We also discuss the non-resonant regime realized in dirty systems, where the plasma resonances are suppressed, and demonstrate that the non-resonant ratchet current is controlled by the Maxwell relaxation in the 2D liquid.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Resonant exchange interaction in semiconductors

We present a non-perturbative calculation of indirect exchange interaction between two paramagnetic impurities via 2D free carriers gas separated by a tunnel barrier. The new method accounts for the impurity attractive potential producing a bound state. The calculations show that for if the bound impurity state energy lies within the energy range occupied by the free 2D carriers the indirect exchange interaction is strongly enhanced due to resonant tunneling and exceeds by a few orders of magnitude what one would expect from the conventional RKKY approach.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Tunneling magnetic effect in heterostructures with paramagnetic impurities

An effect of paramagnetic impurity located in a vicinity of a quantum well (QW) on spin polarization of the carriers in the QW is analyzed theoretically. Within approach of Bardeen's tunneling Hamiltonian the problem is formulated in terms of Anderson-Fano model of configuration interaction between a localized hole state at Mn and continuum of heavy hole states in the InGaAs-based QW. The hybridization between the localized state and the QW leads to resonant enhancement of interband radiative recombination. The splitting of the configuration resonances induced by splitting of the localized state in magnetic field results in circular polarization of light emitted from the QW. The developed theory is capable of explaining known experimental results and allows for calculation of the photoluminescence spectra and dependence of integral polarization on temperature and other parameters.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Conversion of hole states by acoustic solitons

The hole states in the valence band of a large class of semiconductors are degenerate in the projections of angular momentum. Here we show that the switching of a hole between the states can efficiently be realized by acoustic solitons. The microscopic mechanism of such a state conversion is related to the valence band splitting by local elastic strain. The conversion is studied here for heavy holes localized at shallow and deep acceptors in silicon quantum wells.

0 citations0 reviewsNo code linkedOpen access