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N. Martucciello

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph

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preprint2020arXiv

Vacuum gauge from ultrathin MoS2 transistor

We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-dependent O2, N2 and H2O molecule adsorption that affect the n-doping of the MoS2 channel.

preprint2016arXiv

Low-energy electron-irradiation effect on transport properties of graphene field effect transistor

We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO $_2$ , obtaining specific contact resistivity $ρ_c \simeq 19 kΩμm^2$ and carrier mobility as high as 4000 cm $^2$ V $^{-1}$ s $^{-1}$ . By using a highly doped p-Si/SiO $_2$ substrate as back gate, we analyze the transport properties of the device and the dependence on the pressure and on the electron bombardment. We demonstrate that low energy irradiation is detrimental on the transistor current capability, resulting in an increase of the contact resistance and a reduction of the carrier mobility even at electron doses as low as 30 $e^-/nm^2$ . We also show that the irradiated devices recover by returning to their pristine state after few repeated electrical measurements.

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