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Researcher profile

A. Di Bartolomeo

A. Di Bartolomeo contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

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Published work

11 published item(s)

preprint2020arXiv

Electron irradiation of metal contacts in monolayer MoS$_2$ Field-Effect Transistors

This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. Hence, we propose that the transistor current enhancement is due to thermally induced interfacial reactions that lower the contact Schottky barriers. We also show that the electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron irradiation on multilayer PdSe$_2$ field effect transistors

Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drain Pd leads enable contacts with resistance below 350 kOhm um. The transistors exhibit a prevailing n-type conduction in high vacuum, which reversibly turns into ambipolar electric transport at atmospheric pressure. Irradiation by 10 keV electrons suppresses the channel conductance and promptly transforms the device from n-type to p-type. An electron fluence as low as 160 e-/nm2 dramatically change the transistor behavior demonstrating a high sensitivity of PdSe2 to electron irradiation. The sensitivity is lost after few exposures, that is a saturation condition is reached for fluence higher than 4000 e-/nm2. The damage induced by high electron fluence is irreversible as the device persist in the radiation-modified state for several hours, if kept in vacuum and at room temperature. With the support of numerical simulation, we explain such a behavior by electron-induced Se atom vacancy formation and charge trapping in slow trap states at the Si/SiO_2 interface.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Field emission in ultrathin PdSe2 back-gated transistors

We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In this work, we demonstrate field emission from few-layer PdSe2 nanosheets with current up to the uA and turn-on field below 100 V/um, thus extending the plethora of applications of this recently isolated pentagonal layered material.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Vacuum gauge from ultrathin MoS2 transistor

We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-dependent O2, N2 and H2O molecule adsorption that affect the n-doping of the MoS2 channel.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Multi-walled carbon nanotube films for the measurement of the alcoholic concentration

We show that a multi-walled carbon nanotube film can be used as the sensing element of a low-cost sensor for the alcoholic concentration in liquid solutions. To this purpose, we investigate the electrical resistance of the film as a function of the isopropanol concentration in a water solution. The analysis reveals a growing resistance with increasing isopropanol concentration and a fast response. The sensing element is re-usable as the initial resistance value is restored once the solution has evaporated. The electrical resistance increases linearly when the multi-walled carbon nanotube film is exposed to common beverages with increasing alcoholic content. This work paves the way for the development of low-cost, miniaturized MWCNT-based sensors for quality monitoring and control of alcoholic beverages and general liquid solutions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Field emission from single and few-layer graphene flakes

We report the observation and characterization of field emission current from individual single- and few-layer graphene flakes laid on a flat SiO2/Si substrate. Measurements were performed in a scanning electron microscope chamber equipped with nanoprobes, used as electrodes to realize local measurements of the field emission current. We achieved field emission currents up to 1 μA from the flat part of graphene flakes at applied fields of few hundred V/μm. We found that emission process is stable over a period of several hours and that it is well described by a Fowler-Nordheim model for currents over 5 orders of magnitude.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Field emission properties of as-grown multiwalled carbon nanotube films

Multiwalled carbon nanotubes have been produced by ethylene catalytic chemical vapor deposition and used to fabricate thick and dense freestanding films ("buckypapers") by membrane filtering. Field emission properties of buckypapers have been locally studied by means of high vacuum atomic force microscopy with a standard metallic cantilever used as anode to collect electrons emitted from the sample. Buckypapers showed an interesting linear dependence in the Fowler-Nordheim plots demonstrating their suitability as emitters. By precisely tuning the tip-sample distance in the submicron region we found out that the field enhancement factor is not affected by distance variations up to 2um. Finally, the study of current stability showed that the field emission current with intensity of about 3,3*10-5A remains remarkably stable (within 5% fluctuations) for several hours.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Impurity effects on Fabry-Perot physics of ballistic carbon nanotubes

We present a theoretical model accounting for the anomalous Fabry-Perot pattern observed in the ballistic conductance of a single-wall carbon nanotubes. Using the scattering field theory, it is shown that the presence of a limited number of impurities along the nanotube can be identified by a measurement of the conductance and their position determined. Impurities can be made active or silent depending on the interaction with the substrate via the back-gate. The conceptual steps for designing a bio-molecules detector are briefly discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Field emission from single multi-wall carbon nanotubes

Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a high control capability on the geometric parameters of the field emission system (CNT length, diameter and anode-cathode distance). For several multiwalled carbon nanotubes, reproducible and quite stable emission current behaviour has been obtained with a dependence on the applied voltage well described by a series resistance modified Fowler-Nordheim model. A turn-on field of about 30 V/um and a field enhancement factor of around 100 at a cathode-anode distance of the order of 1 um have been evaluated. Finally, the effect of selective electron beam irradiation on the nanotube field emission capabilities has been extensively investigated.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Local probing of the field emission stability of vertically aligned multiwalled carbon nanotubes

Metallic cantilever in high vacuum atomic force microscope has been used as anode for field emission experiments from densely packed vertically aligned multi-walled carbon nanotubes. The high spatial resolution provided by the scanning probe technique allowed precise setting of the tip-sample distance in the submicron region. The dimension of the probe (curvature radius below 50nm) allowed to measure current contribution from sample areas smaller than 1um^2. The study of long-term stability evidenced that on these small areas the field emission current remains stable (within 10% fluctuations) several hours (at least up to 72 hours) at current intensities between 10-5A and 10-8A. Improvement of the current stability has been observed after performing long-time Joule heating conditioning to completely remove possible adsorbates on the nanotubes.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

A local field emission study of partially aligned carbon-nanotubes by AFM probe

We report on the application of Atomic Force Microscopy (AFM) for studying the Field Emission (FE) properties of a dense array of long and vertically quasi-aligned multi-walled carbon nanotubes grown by catalytic Chemical Vapor Deposition on a silicon substrate. The use of nanometric probes enables local field emission measurements allowing investigation of effects non detectable with a conventional parallel plate setup, where the emission current is averaged on a large sample area. The micrometric inter-electrode distance let achieve high electric fields with a modest voltage source. Those features allowed us to characterize field emission for macroscopic electric fields up to 250 V/$μ$m and attain current densities larger than 10$^5$ A/cm$^2$. FE behaviour is analyzed in the framework of the Fowler-Nordheim theory. A field enhancement factor $γ\approx$ 40-50 and a turn-on field $E_{turn-on} \sim$15 V/$μ$m at an inter-electrode distance of 1 $μ$m are estimated. Current saturation observed at high voltages in the I-V characteristics is explained in terms of a series resistance of the order of M$Ω$. Additional effects as electrical conditioning, CNT degradation, response to laser irradiation and time stability are investigated and discussed.

0 citations0 reviewsNo code linkedOpen access