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Researcher profile

A. Grillo

A. Grillo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phastro-ph.HEastro-ph.IMhep-exhep-phphysics.ins-det

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Published work

7 published item(s)

preprint2021arXiv

Sensitivity of the Cherenkov Telescope Array to a dark matter signal from the Galactic centre

We provide an updated assessment of the power of the Cherenkov Telescope Array (CTA) to search for thermally produced dark matter at the TeV scale, via the associated gamma-ray signal from pair-annihilating dark matter particles in the region around the Galactic centre. We find that CTA will open a new window of discovery potential, significantly extending the range of robustly testable models given a standard cuspy profile of the dark matter density distribution. Importantly, even for a cored profile, the projected sensitivity of CTA will be sufficient to probe various well-motivated models of thermally produced dark matter at the TeV scale. This is due to CTA's unprecedented sensitivity, angular and energy resolutions, and the planned observational strategy. The survey of the inner Galaxy will cover a much larger region than corresponding previous observational campaigns with imaging atmospheric Cherenkov telescopes. CTA will map with unprecedented precision the large-scale diffuse emission in high-energy gamma rays, constituting a background for dark matter searches for which we adopt state-of-the-art models based on current data. Throughout our analysis, we use up-to-date event reconstruction Monte Carlo tools developed by the CTA consortium, and pay special attention to quantifying the level of instrumental systematic uncertainties, as well as background template systematic errors, required to probe thermally produced dark matter at these energies. "Full likelihood tables complementing our analysis are provided here [ https://doi.org/10.5281/zenodo.4057987 ]"

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron irradiation of metal contacts in monolayer MoS$_2$ Field-Effect Transistors

This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. Hence, we propose that the transistor current enhancement is due to thermally induced interfacial reactions that lower the contact Schottky barriers. We also show that the electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron irradiation on multilayer PdSe$_2$ field effect transistors

Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drain Pd leads enable contacts with resistance below 350 kOhm um. The transistors exhibit a prevailing n-type conduction in high vacuum, which reversibly turns into ambipolar electric transport at atmospheric pressure. Irradiation by 10 keV electrons suppresses the channel conductance and promptly transforms the device from n-type to p-type. An electron fluence as low as 160 e-/nm2 dramatically change the transistor behavior demonstrating a high sensitivity of PdSe2 to electron irradiation. The sensitivity is lost after few exposures, that is a saturation condition is reached for fluence higher than 4000 e-/nm2. The damage induced by high electron fluence is irreversible as the device persist in the radiation-modified state for several hours, if kept in vacuum and at room temperature. With the support of numerical simulation, we explain such a behavior by electron-induced Se atom vacancy formation and charge trapping in slow trap states at the Si/SiO_2 interface.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Field emission in ultrathin PdSe2 back-gated transistors

We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In this work, we demonstrate field emission from few-layer PdSe2 nanosheets with current up to the uA and turn-on field below 100 V/um, thus extending the plethora of applications of this recently isolated pentagonal layered material.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

First detection of the Crab Nebula at TeV energies with a Cherenkov telescope in a dual-mirror Schwarzschild-Couder configuration: the ASTRI-Horn telescope

We report on the first detection of very high-energy (VHE) gamma-ray emission from the Crab Nebula by a Cherenkov telescope in dual-mirror Schwarzschild-Couder (SC) configuration. The result has been achieved by means of the 4 m size ASTRI-Horn telescope, operated on Mt. Etna (Italy) and developed in the context of the Cherenkov Telescope Array Observatory preparatory phase. The dual-mirror SC design is aplanatic and characterized by a small plate scale, allowing us to implement large field of view cameras with small-size pixel sensors and a high compactness. The curved focal plane of the ASTRI camera is covered by silicon photo-multipliers (SiPMs), managed by an unconventional front-end electronics based on a customized peak-sensing detector mode. The system includes internal and external calibration systems, hardware and software for control and acquisition, and the complete data archiving and processing chain. The observations of the Crab Nebula were carried out in December 2018, during the telescope verification phase, for a total observation time (after data selection) of 24.4 h, equally divided into on- and off-axis source exposure. The camera system was still under commissioning and its functionality was not yet completely exploited. Furthermore, due to recent eruptions of the Etna Volcano, the mirror reflection efficiency was reduced. Nevertheless, the observations led to the detection of the source with a statistical significance of 5.4 sigma above an energy threshold of ~3 TeV. This result provides an important step towards the use of dual-mirror systems in Cherenkov gamma-ray astronomy. A pathfinder mini-array based on nine large field-of-view ASTRI-like telescopes is under implementation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Vacuum gauge from ultrathin MoS2 transistor

We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-dependent O2, N2 and H2O molecule adsorption that affect the n-doping of the MoS2 channel.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Characterization method to achieve simultaneous absolute PDE measurements of all pixels of an ASTRI Mini-Array camera tile

Recently, the Istituto Nazionale di Astrofisica (INAF) has placed a contract with Hamamatsu Photonics to acquire hundreds of Silicon Photomultipliers (SiPM) tiles to build 10 cameras with 37 tiles each for the ASTRI Mini-Array (MA) project. Each tile is made up of 8x8 pixels of 7x7 mm2 with micro-cells of 75um. To check the quality of the delivered tiles a complex and acurate test plan has been studied. The possibility to simultaneously analyse as many pixels as possible becomes of crucial im-portance. Dark Count Rate (DCR) versus over-voltage and versus temperature and Optical Cross Talk (OCT) versus over-voltage can be easily measured simultaneously for all pixels because they are carried out in dark conditions. On the contrary, simultaneous Photon Detection Efficiency (PDE) measurement of all pixels of a tile is not easily achievable and needs an appropriate optical set-up. Simultaneous measurements have the advantage of speeding up the entire procedure and enabling quick PDE compari-son of all the tile pixels. The paper describes the preliminary steps to guarantee an accurate absolute PDE measurement and the investigation the capa-bility of the electronics to obtain simultaneous PDE measurements. It also demonstrates the possibility of using a calibrated SiPM as reference detector instead of a calibrated photodiode. The method to achieve accurate absolute PDE of four central pixels of a tile is also described.

0 citations0 reviewsNo code linkedOpen access