Researcher profile

N. Kirova

N. Kirova contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2014arXiv

Multi-vortex dynamics in junctions of charge density waves

Ground state reconstruction by creation of topological defects in junctions of CDWs is a convenient playground for modern efforts of field-effect transformations in strongly correlated materials with spontaneous symmetry breakings. Being transient, this effect contributes also to another new science of pump-induced phase transitions. We present a dynamical model for behavior of the CDW in restricted geometries of junctions under an applied voltage or a passing current. The model takes into account multiple interacting fields: the amplitude and the phase of the CDW complex order parameter, distributions of the electric field, the density and the current of various normal carriers. A particular challenge was to monitor the local conservation of the condensed and the normal charge densities. That was done easily invoking the chiral invariance and the associated anomaly, but prize is an unconventional Ginsburg-Landau type theory which is not analytic with respect to the order parameter. The numerical modeling poses unusual difficulties but still can demonstrate that vortices are nucleated at the junction boundary when the voltage across, or the current through, exceed a threshold.

preprint2008arXiv

Device Model for Graphene Bilayer Field-Effect Transistor

We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies as well as energy gap in different sections of the channel on the bias back-gate and top-gate voltages. Using this model, we calculate the dc and ac source-drain currents and the transconductance of GBL-FETs with both ballistic and collision dominated electron transport as functions of structural parameters, the bias back-gate and top-gate voltages, and the signal frequency. It is shown that there are two threshold voltages, $V_{th,1}$ and $V_{th,2}$, so that the dc current versus the top-gate voltage relation markedly changes depending on whether the section of the channel beneath the top gate (gated section) is filled with electrons, depleted, or filled with holes. The electron scattering leads to a decrease in the dc and ac currents and transconductances, whereas it weakly affects the threshold frequency. As demonstrated, the transient recharging of the gated section by holes can pronouncedly influence the ac transconductance resulting in its nonmonotonic frequency dependence with a maximum at fairly high frequencies.