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Researcher profile

A. Satou

A. Satou contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

14 published item(s)

preprint2021arXiv

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage characteristics and impedance of the p+-p-i-n-n+ graphene tunneling transistor structures (GTTSs). The drag leads to a current amplification in the gated n- and p-regions and a positive feedback between the amplified dragged current and the injected tunneling current. A sufficiently strong drag can result in the negative real part of the GTTS impedance enabling the plasma instability and the self-excitation of the plasma oscillations in the terahertz (THz) frequency range. This effect might be used for the generation of the THz radiation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Damping of Terahertz Plasmons in Graphene Coupled with Surface Plasmons in Heavily-Doped Substrate

Coupling of plasmons in graphene at terahert (THz) frequencies with surface plasmons in a heavily-doped substrate is studied theoretically. We reveal that a huge scattering rate may completely damp out the plasmons, so that proper choices of material and geometrical parameters are essential to suppress the coupling effect and to obtain the minimum damping rate in graphene. Even with the doping concentration 10^{19} - 10^{20} cm^{-3} and the thickness of the dielectric layer between graphene and the substrate 100 nm, which are typical values in real graphene samples with a heavily-doped substrate, the increase in the damping rate is not negligible in comparison with the acoustic-phonon-limited damping rate. Dependence of the damping rate on wavenumber, thicknesses of graphene-to-substrate and gate-to-graphene separation, substrate doping concentration, and dielectric constants of surrounding materials are investigated. It is shown that the damping rate can be much reduced by the gate screening, which suppresses the field spread of the graphene plasmons into the substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Graphene vertical hot-electron terahertz detectors

We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band off-set (such as tungsten disulfide and related materials). The operation of these detectors is enabled by the thermionic emissions from the GLs enhanced by the electrons heated by incoming THz radiation. The electron heating is primarily associated with the intraband absorption (the Drude absorption). We calculate the responsivity and detectivity as functions of the photon energy, GL doping, and the applied voltage for the GL detectors (GLDs) with different number of GLs. The detectors based on the cascade multiple-GL structures can exhibit a substantial photoelectric gain resulting in the elevated responsivity and detectivity. The advantages of the THz detectors under consideration are associated with their high sensitivity to the normal incident radiation and efficient operation at room temperature at the low end of the THz frequency range. Such GLDs with a metal grating, supporting the excitation of plasma oscillations in the GL-structures by the incident THz radiation, can exhibit a strong resonant response at the frequencies of several THz (in the range, where the operation of the conventional detectors based on A$_3$B$_5$ materials, in particular THz quantum-well detectors, is hindered due to a strong optical phonon radiation absorption in such materials).

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Double injection in graphene p-i-n structures

We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model, we calculate the band edge profile, the spatial distributions of the quasi-Fermi energies, carrier density and velocity, and the current-voltage characteristics. In particular, we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dynamic effects in double graphene-layer structures with inter-layer resonant-tunneling negative conductivity

We study the dynamic effects in the double graphene-layer (GL) structures with the resonant-tunneling (RT) and the negative differential inter-GL conductivity. Using the developed model, which accounts for the excitation of self-consistent oscillations of the electron and hole densities and the ac electric field between GLs (plasma oscillations), we calculate the admittance of the double-GL RT structures as a function of the signal frequency and applied voltages, and the spectrum and increment/decrement of plasma oscillations. Our results show that the electron-hole plasma in the double-GL RT structures with realistic parameters is stable with respect to the self-excitation of plasma oscillations and aperiodic perturbations. The stability of the electron-hole plasma at the bias voltages corresponding to the inter-GL RT and strong nonlinearity of the RT current-voltage characteristics enable using the double-GL RT structures for detection of teraherz (THz) radiation. The excitation of plasma oscillations by the incoming THz radiation can result in a sharp resonant dependence of detector responsivity on radiation frequency and the bias voltage. Due to a strong nonlinearity of the current-voltage characteristics of the double-GL structures at RT and the resonant excitation of plasma oscillations, the maximum responsivity, $R_V^{max}$, can markedly exceed the values $(10^4 - 10^5)$~V/W at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Teraherz photomixing using plasma resonances in double-graphene layer structures

We propose the concept of terahertz (THz) photomixing enabled by the interband electron transitions due to the absorption of modulated optical radiation in double-graphene layer (double-GL) structures and the resonant excitation of plasma oscillations. Using the developed double-GL photomixer (DG-PM) model, we describe its operation and calculate the device characteristics. The output power of the THz radiation exhibits sharp resonant peaks at the plasmonic resonant frequencies. The peak powers markedly exceed the output powers at relatively low frequencies. Due to relatively high quantum efficiency of optical absorption in GLs and short inter-GL transit time, the proposed DG-PM operating in the resonant plasma oscillation regime can surpass the photomixers based on the standard heterostructures .

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Transient stimulated emission from multi-split-gated graphene structure

Mechanism of transient population inversion in graphene with multi-splitted (interdigitated) top-gate and grounded back gate is suggested and examined for the mid-infrared (mid-IR) spectral region. Efficient stimulated emission after fast lateral spreading of carriers due to drift-diffusion processes is found for the case of a slow electron-hole recombination in the passive region. We show that with the large gate-to-graphene distance the drift process always precedes the diffusion process, due to the ineffective screening of the inplane electric field by the gates. Conditions for lasing with a gain above 100 cm$^{-1}$ are found for cases of single- and multi-layer graphene placed in the waveguide formed by the top and back gates. Both the waveguide losses and temperature effects are analyzed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Threshold of Terahertz Population Inversion and Negative Dynamic Conductivity in Graphene Under Pulse Photoexcitation

We theoretically study the population inversion and negative dynamic conductivity in intrinsic graphene in the terahertz (THz) frequency range upon pulse photoexcitation with near-/mid-infrared wavelength. The threshold pulse energy required for the population inversion and negative dynamic conductivity can be orders-of-magnitude lower when the pulse photon energy is lower, due to the inverse proportionality of the photoexcited carrier concentration to the pulse photon energy and to the weaker carrier heating. We also investigate the dependence of the dynamic conductivity on the momentum relaxation time. The negative dynamic conductivity takes place either in high- or low-quality graphene, where the Drude absorption by carriers in the THz frequency is weak.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Effect of heating and cooling of photogenerated electron-hole plasma in optically pumped graphene on population inversion

We study the characteristics of photogenerated electron-hole plasma in optically pumped graphene layers at elevated (room) temperatures when the interband and intraband processes of emission and absorption of optical phonons play a crucial role. The electron-hole plasma heating and cooling as well as the effect of nonequilibrium optical phonons are taken into account. % The dependences of the quasi-Fermi energy and effective temperature of optically pumped graphene layers on the intensity of pumping radiation are calculated. The variation of the frequency dependences dynamic conductivity with increasing pumping intensity as well as the conditions when this conductivity becomes negative in a certain range of frequencies are considered. % The effects under consideration can markedly influence the achievement of the negative dynamic conductivity in optically pumped graphene layers associated with the population inversion and, hence, the realization graphene-based terahertz and infrared lasers operating at room temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

We develop an analytical device model for graphene bilayer field-effect transistors (GBL-FETs) with the back and top gates. The model is based on the Boltzmann equation for the electron transport and the Poisson equation in the weak nonlocality approximation for the potential in the GBL-FET channel. The potential distributions in the GBL-FET channel are found analytically. The source-drain current in GBL-FETs and their transconductance are expressed in terms of the geometrical parameters and applied voltages by analytical formulas in the most important limiting cases. These formulas explicitly account for the short-gate effect and the effect of drain-induced barrier lowering. The parameters characterizing the strength of these effects are derived. It is shown that the GBL-FET transconductance exhibits a pronounced maximum as a function of the top-gate voltage swing. The interplay of the short-gate effect and the electron collisions results in a nonmonotonic dependence of the transconductance on the top-gate length.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Feasibility of terahertz lasing in optically pumped epitaxial multiple graphene layer structures

A multiple-graphene-layer (MGL) structure with a stack of GLs and a highly conducting bottom GL on SiC substrate pumped by optical radiation is considered as an active region of terahertz (THz) and far infrared (FIR) lasers with external metal mirrors. The dynamic conductivity of the MGL structure is calculated as a function of the signal frequency, the number of GLs, and the optical pumping intensity. The utilization of optically pumped MGL structures might provide the achievement of lasing with the frequencies of about 1 THz at room temperature due to a high efficiency.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Current-voltage characteristics of a graphene nanoribbon field-effect transistor

We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the source-drain current. The equations of the model of a graphene nanoribbon field-effect transistor (GNR-FET) include the Poisson equation in the weak nonlocality approximation. Using this model, we find explicit analytical formulas for the spatial distributions of the electric potential along the channel and for the GNR-FET current-voltage characteristics (the dependences of the source-drain current on the drain voltages as well as on the back gate and top gate voltages) for different geometric parameters of the device. It is shown that the shortening of the top gate can result in a substantial modification of the GNR-FET current-voltage characteristics.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Device Model for Graphene Bilayer Field-Effect Transistor

We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies as well as energy gap in different sections of the channel on the bias back-gate and top-gate voltages. Using this model, we calculate the dc and ac source-drain currents and the transconductance of GBL-FETs with both ballistic and collision dominated electron transport as functions of structural parameters, the bias back-gate and top-gate voltages, and the signal frequency. It is shown that there are two threshold voltages, $V_{th,1}$ and $V_{th,2}$, so that the dc current versus the top-gate voltage relation markedly changes depending on whether the section of the channel beneath the top gate (gated section) is filled with electrons, depleted, or filled with holes. The electron scattering leads to a decrease in the dc and ac currents and transconductances, whereas it weakly affects the threshold frequency. As demonstrated, the transient recharging of the gated section by holes can pronouncedly influence the ac transconductance resulting in its nonmonotonic frequency dependence with a maximum at fairly high frequencies.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Nonequilibrium carriers in an intrinsic graphene under interband photoexcitation

We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under far- and mid-infrared (IR) radiation in a wide range of its intensities. The energy distributions of carriers are calculated using a quasiclassic kinetic equation which accounts for the energy relaxation due to acoustic phonons and the radiative generation-recombination processes associated with thermal radiation and the carrier photoexcitation by incident radiation. It is found that the nonequilibrium distributions are determined by an interplay between weak energy relaxation on acoustic phonons and generation-recombination processes as well as by the effect of pumping saturation. Due to the effect of saturation, the carrier distribution functions can exhibit plateaus around the pumping region at elevated intensities. As shown, at sufficiently strong mid-IR pumping, the population inversion can occur below the pumping energy. The graphene dc conductivity as a function of the pumping intensity exhibits a pronounced nonlinearity with a sub-linear region at fairly low intensities and a saturation at a strong pumping. However, an increase in the pumping intensity in very wide range leads only to a modest increase in the carrier concentration and, particularly, the dc conductivity. The graphene conductivity at mid-IR irradiation exhibit strong sensitivity to mechanisms of carrier momentum relaxation.

0 citations0 reviewsNo code linkedOpen access