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Researcher profile

N. García

N. García contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-con

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Published work

9 published item(s)

preprint2014arXiv

On the low-field Hall coefficient of graphite

We have measured the temperature and magnetic field dependence of the Hall coefficient ($R_{\rm H}$) in three, several micrometer long multigraphene samples of thickness between $\sim 9~$to $\sim 30$~nm in the temperature range 0.1 to 200~K and up to 0.2~T field. The temperature dependence of the longitudinal resistance of two of the samples indicates the contribution from embedded interfaces running parallel to the graphene layers. At low enough temperatures and fields $R_{\rm H}$ is positive in all samples, showing a crossover to negative values at high enough fields and/or temperatures in samples with interfaces contribution. The overall results are compatible with the reported superconducting behavior of embedded interfaces in the graphite structure and indicate that the negative low magnetic field Hall coefficient is not intrinsic of the ideal graphite structure.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Evidence for semiconducting behavior with a narrow band gap of Bernal graphite

We have studied the resistivity of a large number of highly oriented graphite samples with areas ranging from several mm$^2$ to a few $μ$m$^2$ and thickness from $\sim 10 $nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density $< 10^9$ cm$^{-2}$ and the one from metallic-like internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a narrow-gap semiconductor with an energy gap $E_g \sim 40 $meV.

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preprint2012arXiv

Length dependence of the resistance in graphite: Influence of ballistic transport

Using a linear array of voltage electrodes with a separation of several micrometers on a $20 $nm thick and 30 $μ$m long multigraphene sample we show that the measured resistance does not follow the usual length dependence according to Ohm&#39;s law. The deviations can be quantitatively explained taking into account Sharvin-Knudsen formula for ballistic transport. This allows us to obtain without free parameters the mean free path of the carriers in the sample at different temperatures. In agreement with recently reported values obtained with a different experimental method, we obtain that the carrier mean free path is of the order of $\sim 2 μ$m with a mobility $μ\sim 10^7 $cm$^{2}$V$^{-1}$s$^{-1}$. The results indicate that the usual Ohm&#39;s law is not adequate to calculate the absolute resistivity of mesoscopic graphite samples.

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preprint2011arXiv

Comment on &#34;Dirac cones reshaped by interaction effects in suspended graphene&#34; by Elias et al., Nature Physics 7, 701 (2011)

Two different points of view are available to understand the behavior of graphene at low energies. One is considering a large $N_F$ that makes graphene a semimetal, and another for small $N_F < 2.5$ that would make graphene a narrow gap semiconductor (D. T. Son, Phys. rev. B 75, 235423 (2007)), a prediction supported independently by Monte Carlo simulations (J. E. Drut and T. A. Lähde, Phys. Rev. Lett. 102, 026802 (2009), see also Phys. Rev. B 79, 241405(R) (2009)). Taking into account recently obtained experimental evidence for weakly coupled graphene layers, i.e. graphite (N. García et al., arXiv/1106.0437), we tend to support the last one.

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preprint2010arXiv

Ballistic transport at room temperature in micrometer size multigraphene

The intrinsic values of the carriers mobility and density of the graphene layers inside graphite, the well known structure built on these layers in the Bernal stacking configuration, are not well known mainly because most of the research was done in rather bulk samples where lattice defects hide their intrinsic values. By measuring the electrical resistance through microfabricated constrictions in micrometer small graphite flakes of a few tens of nanometers thickness we studied the ballistic behavior of the carriers. We found that the carriers&#39; mean free path is micrometer large with a mobility $μ\simeq 6 \times 10^6 $cm$^2$/Vs and a carrier density $n \simeq 7 \times 10^8 $cm$^{-2}$ per graphene layer at room temperature. These distinctive transport and ballistic properties have important implications for understanding the values obtained in single graphene and in graphite as well as for implementing this last in nanoelectronic devices.

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preprint2009arXiv

Disordered Electrical Potential Observed on the Surface of SiO$_2$ by Electric Field Microscopy

The electrical potential on the surface of $\sim 300$ nm thick SiO$_2$ grown on single crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to $\sim 0.4 $V within regions of $1 μ$m. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.

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preprint2009arXiv

Magnetic order in Graphite: Experimental evidence, intrinsic and extrinsic difficulties

We discuss recently obtained data using different experimental methods including magnetoresistance measurements that indicate the existence of metal-free high-temperature magnetic order in graphite. Intrinsic as well as extrinsic difficulties to trigger magnetic order by irradiation of graphite are discussed in view of recently published theoretical work.

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preprint2007arXiv

Size Effects in the Magnetoresistance of Graphite: Absence of Magnetoresistance in Micrometer size Samples

We present a study of the magnetoresistance of highly oriented pyrolytic graphite (HOPG) as a function of the sample size. Our results show unequivocally that the magnetoresistance reduces with the sample size even for samples of hundreds of micrometers size. This sample size effect is due the large mean free path and Fermi wavelength of carriers in graphite and may explain the observed practically absence of magnetoresistance in micrometer confined small graphene samples where quantum effects should be at hand. These were not taken into account in the literature yet and ask for a revision of experimental and theoretical work on graphite.

0 citations0 reviewsNo code linkedOpen access
preprint1997arXiv

Non Equilibrium Electronic Distribution in Single Electron Devices

The electronic distribution in devices with sufficiently small diemnsions may not be in thermal equilibrium with their surroundings. Systems where the occupancies of electronic states are solely determined by tunneling processes are analyzed. It is shown that the effective temperature of the device may be higher, or lower, than that of its environment, depending on the applied voltage and the energy dependence of the tunneling rates. The I-V characteristics become asymmetric. Comparison with recent experiments is made.

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