Researcher profile

N. E. Kopteva

N. E. Kopteva contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2026arXiv

Spin dynamics of excitons and carriers in mixed-cation MA$_{x}$FA$_{1-x}$PbI$_{3}$ perovskite crystals: alloy fluctuations probed by optical orientation

Optical spin orientation measured by time-resolved photoluminescence provides a powerful tool to probe the spin dynamics of excitons and charge carriers in perovskite semiconductors. The impact of alloy fluctuations on the spin dynamics of mixed-cation \MAFAPI{} perovskite single crystals is studied here experimentally. The optical orientation is measured under nonresonant excitation for crystals with $x = 0.1$, $0.4$, and $0.8$ at cryogenic temperatures and compared with data on \MAPI{} crystals. The high degree of exciton optical orientation of $75-80$\% for $x = 0.1$ and $0.8$ reduces to about 60\% for $x = 0.4$. A similar trend is observed for the carrier spin optical orientation. This behavior is attributed to enhanced scattering of free excitons and carriers in the alloys with increased compositional and structural disorder. From the Larmor spin precession measured from spin dynamics in an external magnetic field applied in the Voigt geometry, the electron and hole $g$-factors are evaluated. Their dependence on the band gap energy in \MAFAPI{} crystals follows the universal trend previously established for lead halide perovskites.

preprint2021arXiv

The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap

The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)$_3$, FAPbBr$_3$, FA$_{0.9}$Cs$_{0.1}$PbI$_{2.8}$Br$_{0.2}$) and all-inorganic (CsPbBr$_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf k \cdot \mathbf p$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.

preprint2021arXiv

Zeeman and Davydov splitting of Frenkel excitons in the antiferromagnet CuB$_2$O$_4$

The optical spectra of antiferromagnetic copper metaborate CuB$_2$O$_4$ are characterized by an exceptionally rich structure of narrow absorption lines due to electronic transitions within the magnetic Cu$^{2+}$ ions, but their unambiguous identification and behavior in magnetic field remain far from being fully understood. We studied the polarized magneto-absorption spectra of this tetragonal antiferromagnet with a high spectral resolution in the range of $1.4055-1.4065$ eV in magnetic fields up to 9.5 T and temperatures from 1.6 up to $T_N = 20$ K. We observed a set of eight absorption lines at $T=1.6$ K in magnetic fields exceeding 1.4 T which we identified as arising from Frenkel excitons related to the ground and the first excited state of Cu$^{2+}$ ions. The number of these excitons is defined by the presence of the four Cu$^{2+}$ ions with the doubly-degenerate spin state $S = 1/2$ at the 4$b$ positions in the crystallographic unit cell. The energies of these excitons are determined the exchange interaction of 0.5 meV of Cu$^{2+}$ ions in the excited state with surrounding ions and by the Davydov splitting of 0.12 meV. In large magnetic field the observed Zeeman splitting is controlled by the anisotropic $g$-factors of both the ground and excited states. We developed a theoretical model of Frenkel excitons in magnetic field that accounts for specific features of the spin structure and exchange interactions in CuB$_2$O$_4$. The model was used for fitting the experimental data and evaluation of Frenkel exciton parameters, such as the Davydov splitting, the molecular exchange energy, and the $g$-factors of the ground and excited states of the Cu$^{2+}$ ions.

preprint2020arXiv

Effect of electric current on optical orientation of electrons in AlGaAs/GaAs heterostructure

The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band: a short-lived high-energy one and a long-lived low-energy one. The high-energy line originates from recombination of electrons freely moving along the structure plane, while the low-energy one is due to recombination of donor-bound electrons near the interface. Application of the lateral electric field of ~ 100-200 V/cm results in a quenching of both lines. This quenching is due to a decrease of electron concentration near the heterointerface as a result of a photocurrent-induced heating of electrons in the GaAs layer. On the contrary, electrons near the heterointerface are effectively cooled, so the donors near the interface are not completely empty up to ~ 100 V/cm, which is in stark contrast with the case of bulk materials. The optical spin polarization of the donor-bound electrons near the heterointerface weakly depends on the electric field. Their polarization kinetics is determined by the spin dephasing in the hyperfine fields of the lattice nuclei. The long spin memory time (> 40 ns) can be associated with suppression of the Bir-Aronov-Pikus mechanism of spin relaxation for electrons.