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Researcher profile

I. V. Kalitukha

I. V. Kalitukha contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

4 published item(s)

preprint2026arXiv

Spin dynamics of excitons and carriers in mixed-cation MA$_{x}$FA$_{1-x}$PbI$_{3}$ perovskite crystals: alloy fluctuations probed by optical orientation

Optical spin orientation measured by time-resolved photoluminescence provides a powerful tool to probe the spin dynamics of excitons and charge carriers in perovskite semiconductors. The impact of alloy fluctuations on the spin dynamics of mixed-cation \MAFAPI{} perovskite single crystals is studied here experimentally. The optical orientation is measured under nonresonant excitation for crystals with $x = 0.1$, $0.4$, and $0.8$ at cryogenic temperatures and compared with data on \MAPI{} crystals. The high degree of exciton optical orientation of $75-80$\% for $x = 0.1$ and $0.8$ reduces to about 60\% for $x = 0.4$. A similar trend is observed for the carrier spin optical orientation. This behavior is attributed to enhanced scattering of free excitons and carriers in the alloys with increased compositional and structural disorder. From the Larmor spin precession measured from spin dynamics in an external magnetic field applied in the Voigt geometry, the electron and hole $g$-factors are evaluated. Their dependence on the band gap energy in \MAFAPI{} crystals follows the universal trend previously established for lead halide perovskites.

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preprint2021arXiv

The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap

The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)$_3$, FAPbBr$_3$, FA$_{0.9}$Cs$_{0.1}$PbI$_{2.8}$Br$_{0.2}$) and all-inorganic (CsPbBr$_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf k \cdot \mathbf p$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effect of electric current on optical orientation of electrons in AlGaAs/GaAs heterostructure

The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band: a short-lived high-energy one and a long-lived low-energy one. The high-energy line originates from recombination of electrons freely moving along the structure plane, while the low-energy one is due to recombination of donor-bound electrons near the interface. Application of the lateral electric field of ~ 100-200 V/cm results in a quenching of both lines. This quenching is due to a decrease of electron concentration near the heterointerface as a result of a photocurrent-induced heating of electrons in the GaAs layer. On the contrary, electrons near the heterointerface are effectively cooled, so the donors near the interface are not completely empty up to ~ 100 V/cm, which is in stark contrast with the case of bulk materials. The optical spin polarization of the donor-bound electrons near the heterointerface weakly depends on the electric field. Their polarization kinetics is determined by the spin dephasing in the hyperfine fields of the lattice nuclei. The long spin memory time (> 40 ns) can be associated with suppression of the Bir-Aronov-Pikus mechanism of spin relaxation for electrons.

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preprint2020arXiv

Magneto-optics of excitons interacting with magnetic ions in CdSe/CdMnS colloidal nanoplatelets

Excitons in diluted magnetic semiconductors represent excellent probes for studying the magnetic properties of these materials. Various magneto-optical effects, which depend sensitively on the exchange interaction of the excitons with the localized spins of the magnetic ions can be used for probing. Here, we study core/shell CdSe/(Cd,Mn)S colloidal nanoplatelets hosting diluted magnetic semiconductor layers. The inclusion of the magnetic Mn$^{2+}$ ions is evidenced by three magneto-optical techniques using high magnetic fields up to 15 T: polarized photoluminescence, optically detected magnetic resonance, and spin-flip Raman scattering. In particular, information on the Mn$^{2+}$ concentration in the CdS shell layers can be obtained from the spin-lattice relaxation dynamics of the Mn$^{2+}$ spin system.

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