Researcher profile

N. Bovenzi

N. Bovenzi contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2015arXiv

Giant negative magnetoresistance driven by spin-orbit coupling at the LAO/STO interface

The LAO/STO interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70\%), attributed to a magnetic-field induced transition between interacting phases of conduction electrons with Kondo-screened magnetic impurities. Here we report on experiments over a broad temperature range, showing the persistence of the magnetoresistance up to the 20~K range --- indicative of a single-particle mechanism. Motivated by a striking correspondence between the temperature and carrier density dependence of our magnetoresistance measurements we propose an alternative explanation. Working in the framework of semiclassical Boltzmann transport theory we demonstrate that the combination of spin-orbit coupling and scattering from finite-range impurities can explain the observed magnitude of the negative magnetoresistance, as well as the temperature and electron density dependence.

preprint2015arXiv

Possible mechanisms of electronic phase separation in oxide interfaces

LaAlO3/SrTiO3 ad LaTiO3/SrTiO3 interfaces are known to host a strongly inhomogeneous (nearly) two-dimensional electron gas (2DEG). In this work we present three unconventional electronic mechanisms of electronic phase separation (EPS) in a 2DEG as a possible source of inhomogeneity in oxide interfaces. Common to all three mechanisms is the dependence of some (interaction) potential on the 2DEG's density. We first consider a mechanism resulting from a sizable density-dependent Rashba spin-orbit coupling. Next, we point out that an EPS may also occur in the case of a density-dependent superconducting pairing interaction. Finally, we show that the confinement of the 2DEG to the interface by a density-dependent, self-consistent electrostatic potential can by itself cause an EPS.