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Source author record

A. D. Caviglia

A. D. Caviglia appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hallphysics.optics

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Published work

14 published item(s)

preprint2020arXiv

Tunable shear strain from resonantly driven optical phonons

Strain engineering has been extended recently to the ultrafast timescales, driving metal-insulator phase transitions and the propagation of ultrasonic demagnetization fronts. However, the non-linear lattice dynamics underpinning interfacial optoelectronic phase switching have not yet been addressed. Here we focus on the lattice dynamics initiated by impulsive resonant excitation of polar lattice vibrations in LaAlO$_3$ single crystals, one of the most widely utilized substrates for oxide electronics. We show that ionic Raman scattering drives coherent oxygen octahedra rotations around a high-symmetry crystal axis and we identify, by means of DFT calculations, the underlying phonon-phonon coupling channel. Resonant lattice excitation is shown to generate longitudinal and transverse acoustic wavepackets, enabled by anisotropic optically-induced strain in and out of equilibrium. Importantly, shear strain wavepackets are found to be generated with extraordinary efficiency at the phonon resonance, being comparable in amplitude to the more conventional longitudinal acoustic waves, opening exciting perspectives for ultrafast material control.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Berry phase engineering at oxide interfaces

Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle changes in the band structure. A unique platform for its manipulation is provided by transition metal oxide heterostructures, where engineering of emergent electrodynamics becomes possible at atomically sharp interfaces. We demonstrate that the Berry curvature and its corresponding vector potential can be manipulated by interface engineering of the correlated itinerant ferromagnet SrRuO$_3$ (SRO). Measurements of the AHE reveal the presence of two interface-tunable spin-polarized conduction channels. Using theoretical calculations, we show that the tunability of the AHE at SRO interfaces arises from the competition between two topologically non-trivial bands. Our results demonstrate how reconstructions at oxide interfaces can be used to control emergent electrodynamics on a nanometer-scale, opening new routes towards spintronics and topological electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Epitaxial growth and thermodynamic stability of SrIrO3/SrTiO3 heterostructures

Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO3 thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO3 target surface. We further demonstrate that bare SrIrO3 thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO3 cap layer deposited in-situ is effective in preserving the film quality, allowing us to measure metallic transport behavior in films with thicknesses down to 4 unit cells. In addition, the SrTiO3 encapsulation enables the fabrication of devices such as Hall bars without altering the film properties, allowing precise (magneto)transport measurements on micro- and nanoscale devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Giant negative magnetoresistance driven by spin-orbit coupling at the LAO/STO interface

The LAO/STO interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70\%), attributed to a magnetic-field induced transition between interacting phases of conduction electrons with Kondo-screened magnetic impurities. Here we report on experiments over a broad temperature range, showing the persistence of the magnetoresistance up to the 20~K range --- indicative of a single-particle mechanism. Motivated by a striking correspondence between the temperature and carrier density dependence of our magnetoresistance measurements we propose an alternative explanation. Working in the framework of semiclassical Boltzmann transport theory we demonstrate that the combination of spin-orbit coupling and scattering from finite-range impurities can explain the observed magnitude of the negative magnetoresistance, as well as the temperature and electron density dependence.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface

We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650°C exhibit the highest low temperature mobility ($\approx 10000 \textrm{ cm}^2/\textrm{Vs}$) and the lowest sheet carrier density ($\approx 5\times 10^{12} \textrm{ cm}^{-2}$). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900°C) display carrier densities in the range of $\approx 2-5 \times 10^{13} \textrm{ cm}^{-2}$ and mobilities of $\approx 1000 \textrm{ cm}^2/\textrm{Vs}$ at 4K. Reducing their carrier density by field effect to $8\times 10^{12} \textrm{ cm}^{-2}$ lowers their mobilites to $\approx 50 \textrm{ cm}^2/\textrm{Vs}$ bringing the conductance to the weak-localization regime.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Melting of Charge Stripes in Vibrationally Driven La1.875Ba0.125CuO4: Assessing the Respective Roles of Electronic and Lattice Order in Frustrated Superconductors

We report femtosecond resonant soft X-ray diffraction measurements of the dynamics of the charge order and of the crystal lattice in non-superconducting, stripe-ordered La1.875Ba0.125CuO4. Excitation of the in-plane Cu-O stretching phonon with a mid-infrared pulse has been previously shown to induce a transient superconducting state in the closely related compound La1.675Eu0.2Sr0.125CuO4. In La1.875Ba0.125CuO4, we find that the charge stripe order melts promptly on a sub-picosecond time scale. Surprisingly, the low temperature tetragonal distortion is only weakly reduced, reacting on significantly longer time scales that do not correlate with light-induced superconductivity. This experiment suggests that charge modulations alone, and not the LTT distortion, prevent superconductivity in equilibrium.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spatially resolved ultrafast magnetic dynamics launched at a complex-oxide hetero-interface

Static strain in complex oxide heterostructures has been extensively used to engineer electronic and magnetic properties at equilibrium. In the same spirit, deformations of the crystal lattice with light may be used to achieve functional control across hetero-interfaces dynamically. Here, by exciting large amplitude infrared-active vibrations in a LaAlO3 substrate we induce magnetic order melting in a NdNiO3 film across a hetero-interface. Femtosecond Resonant Soft X-ray Diffraction is used to determine the spatial and temporal evolution of the magnetic disordering. We observe a magnetic melt front that grows from the substrate interface into the film, at a speed that suggests electronically driven propagation. Light control and ultrafast phase front propagation at hetero-interfaces may lead to new opportunities in optomagnetism, for example by driving domain wall motion to transport information across suitably designed devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

In-plane electronic confinement in superconducting LaAlO$_3$/SrTiO$_3$ nanostructures

We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO$_3$/SrTiO$_3$ interface.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Rashba induced magnetoconductance oscillations in the LaAlO3-SrTiO3 heterostructure

We report measurements of the normal state in-plane magnetoconductance in gated LaAlO$_3$-SrTiO$_3$ samples. As the orientation of the magnetic field changes within the plane of the interface, the signal displays periodic oscillations with respect to the angle between the field and the direction of the current. We show that in the underdoped to optimally doped range, a Fermi surface reconstruction takes place due to the Rashba spin-orbit term and that the oscillations are due to a magnetic field induced opening and closing of a gap at the $Γ$ point for those Ti out-of-plane orbitals having their band minimum close to the Fermi energy of the system.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ultrafast strain engineering in complex oxide heterostructures

We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interface. Vibrational excitation, extended here to a wide class of heterostructures and interfaces, may be conducive to new strategies for electronic phase control at THz repetition rates.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Seebeck effect in the conducting LaAlO_{3}/SrTiO_{3} interface

The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interfaces and, for comparison, in a doped SrTiO_{3} bulk single crystal. In these experiments, the carrier concentration is tuned, using the field effect in a back gate geometry. The combined analysis of all experimental data at 77 K indicates that the thickness of the conducting layer is ~7 nm and that the Seebeck effect data are well described by a two-dimensional (2D) density of states. We find that the back gate voltage is effective in varying not only the charge density, but also the thickness of the conducting layer, which is found to change by a factor of ~2, using an electric field between -4 and +4MV/m at 77K. No enhancement of the Seebeck effect due to the electronic confinement and no evidence for two-dimensional quantization steps are observed at the interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces

We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm$^{2}$/Vs. We observe Shubnikov-de Haas oscillations that indicate a two-dimensional character of the Fermi surface. The frequency of the oscillations signals a multiple sub-bands occupation in the quantum well or a multiple valley configuration. From the temperature dependence of the oscillation amplitude we extract an effective carrier mass $m^{*}\simeq1.45$\,$m_{e}$. An electric field applied in the back-gate geometry increases the mobility, the carrier density and the oscillation frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Tunable Rashba spin-orbit interaction at oxide interfaces

The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new example of an electronic property arising from the interfacial breaking of inversion symmetry, namely a large Rashba spin-orbit interaction, whose magnitude can be modulated by the application of an external electric field. By means of magnetotransport experiments we explore the evolution of the spin-orbit coupling across the phase diagram of the system. We uncover a steep rise in Rashba interaction occurring around the doping level where a quantum critical point separates the insulating and superconducting ground states of the system.

0 citations0 reviewsNo code linkedOpen access