Researcher profile

A. D. Caviglia

A. D. Caviglia contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 15 - UnverifiedVerification L1Unclaimed author
3works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2020arXiv

Tunable shear strain from resonantly driven optical phonons

Strain engineering has been extended recently to the ultrafast timescales, driving metal-insulator phase transitions and the propagation of ultrasonic demagnetization fronts. However, the non-linear lattice dynamics underpinning interfacial optoelectronic phase switching have not yet been addressed. Here we focus on the lattice dynamics initiated by impulsive resonant excitation of polar lattice vibrations in LaAlO$_3$ single crystals, one of the most widely utilized substrates for oxide electronics. We show that ionic Raman scattering drives coherent oxygen octahedra rotations around a high-symmetry crystal axis and we identify, by means of DFT calculations, the underlying phonon-phonon coupling channel. Resonant lattice excitation is shown to generate longitudinal and transverse acoustic wavepackets, enabled by anisotropic optically-induced strain in and out of equilibrium. Importantly, shear strain wavepackets are found to be generated with extraordinary efficiency at the phonon resonance, being comparable in amplitude to the more conventional longitudinal acoustic waves, opening exciting perspectives for ultrafast material control.

preprint2018arXiv

Berry phase engineering at oxide interfaces

Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle changes in the band structure. A unique platform for its manipulation is provided by transition metal oxide heterostructures, where engineering of emergent electrodynamics becomes possible at atomically sharp interfaces. We demonstrate that the Berry curvature and its corresponding vector potential can be manipulated by interface engineering of the correlated itinerant ferromagnet SrRuO$_3$ (SRO). Measurements of the AHE reveal the presence of two interface-tunable spin-polarized conduction channels. Using theoretical calculations, we show that the tunability of the AHE at SRO interfaces arises from the competition between two topologically non-trivial bands. Our results demonstrate how reconstructions at oxide interfaces can be used to control emergent electrodynamics on a nanometer-scale, opening new routes towards spintronics and topological electronics.

preprint2010arXiv

Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.