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Murray McCutcheon

Murray McCutcheon appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2012arXiv

Integrated diamond networks for quantum nanophotonics

Diamond is a unique material with exceptional physical and chemical properties that offers potential for the realization of high-performance devices with novel functionalities. For example diamond's high refractive index, transparency over wide wavelength range, and large Raman gain are of interest for the implementation of novel photonic devices. Recently, atom-like impurities in diamond emerged as an exceptional system for quantum information processing, quantum sensing and quantum networks. For these and other applications, it is essential to develop an integrated nanophotonic platform based on diamond. Here, we report on the realization of such an integrated diamond photonic platform, diamond on insulator (DOI), consisting of a thin single crystal diamond film on top of an insulating silicon dioxide/silicon substrate. Using this approach, we demonstrate diamond ring resonators that operate in a wide wavelength range, including the visible (630nm) and near-infrared (1,550nm). Finally, we demonstrate an integrated, on-chip quantum nanophotonic network, consisting of ring resonators coupled to low loss waveguides with grating couplers, that enables the generation and efficient routing of single photons at room temperature.

preprint2010arXiv

Fabrication of Diamond Nanowires for Quantum Information Processing Applications

We present a design and a top-down fabrication method for realizing diamond nanowires in both bulk single crystal and polycrystalline diamond. Numerical modeling was used to study coupling between a Nitrogen Vacancy (NV) color center and optical modes of a nanowire, and to find an optimal range of nanowire diameters that allows for large collection efficiency of emitted photons. Inductively coupled plasma (ICP) reactive ion etching (RIE) with oxygen is used to fabricate the nanowires. Drop-casted nanoparticles (including $\mathrm{Au}$, $\mathrm{SiO_{2}}$ and $\mathrm{Al_2O_3}$) as well as electron beam lithography defined spin-on glass and evaporated $\mathrm{Au}$ have been used as an etch mask. We found $\mathrm{Al_2O_3}$ nanoparticles to be the most etch resistant. At the same time FOx e-beam resist (spin-on glass) proved to be a suitable etch mask for fabrication of ordered arrays of diamond nanowires. We were able to obtain nanowires with near vertical sidewalls in both polycrystalline and single crystal diamond. The heights and diameters of the polycrystalline nanowires presented in this paper are $\unit[\approx1]{μm}$ and $\unit[120-340]{nm}$, respectively, having a $\unit[200]{nm/min}$ etch rate. In the case of single crystal diamond (types Ib and IIa) nanowires the height and diameter for different diamonds and masks shown in this paper were $\unit[1-2.4]{μm}$ and $\unit[120-490]{nm}$ with etch rates between $\unit[190-240]{nm/min}$.