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Birgit Hausmann

Birgit Hausmann contributes to research discovery and scholarly infrastructure.

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quant-ph physics.optics

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preprint2011arXiv

Plasmonic resonators for enhanced diamond NV- center single photon sources

We propose a novel source of non-classical light consisting of plasmonic aperture with single-crystal diamond containing a single Nitrogen-Vacancy (NV) color center. Theoretical calculations of optimal structures show that these devices can simultaneously enhance optical pumping by a factor of 7, spontaneous emission rates by Fp ~ 50 (Purcell factor), and offer collection efficiencies up to 40%. These excitation and collection enhancements occur over a broad range of wavelengths (~30nm), and are independently tunable with device geometry, across the excitation (~530nm) and emission (~600-800nm) spectrum of the NV center. Implementing this system with top-down techniques in bulk diamond crystals will provide a scalable architecture for a myriad of diamond NV center applications.

preprint2010arXiv

Fabrication of Diamond Nanowires for Quantum Information Processing Applications

We present a design and a top-down fabrication method for realizing diamond nanowires in both bulk single crystal and polycrystalline diamond. Numerical modeling was used to study coupling between a Nitrogen Vacancy (NV) color center and optical modes of a nanowire, and to find an optimal range of nanowire diameters that allows for large collection efficiency of emitted photons. Inductively coupled plasma (ICP) reactive ion etching (RIE) with oxygen is used to fabricate the nanowires. Drop-casted nanoparticles (including $\mathrm{Au}$, $\mathrm{SiO_{2}}$ and $\mathrm{Al_2O_3}$) as well as electron beam lithography defined spin-on glass and evaporated $\mathrm{Au}$ have been used as an etch mask. We found $\mathrm{Al_2O_3}$ nanoparticles to be the most etch resistant. At the same time FOx e-beam resist (spin-on glass) proved to be a suitable etch mask for fabrication of ordered arrays of diamond nanowires. We were able to obtain nanowires with near vertical sidewalls in both polycrystalline and single crystal diamond. The heights and diameters of the polycrystalline nanowires presented in this paper are $\unit[\approx1]{μm}$ and $\unit[120-340]{nm}$, respectively, having a $\unit[200]{nm/min}$ etch rate. In the case of single crystal diamond (types Ib and IIa) nanowires the height and diameter for different diamonds and masks shown in this paper were $\unit[1-2.4]{μm}$ and $\unit[120-490]{nm}$ with etch rates between $\unit[190-240]{nm/min}$.