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Researcher profile

Muhammad Riaz

Muhammad Riaz contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elmath.GRSystems and Control

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Published work

6 published item(s)

preprint2014arXiv

Persistent photoconductivity in 2-dimensional electron gases at different oxide interfaces

We report on the transport characterization in dark and under light irradiation of three different interfaces: LaAlO3/SrTiO3, LaGaO3/SrTiO3, and the novel NdGaO3/SrTiO3 heterostructure. All of them share a perovskite structure, an insulating nature of the single building blocks, a polar/non- polar character and a critical thickness of four unit cells for the onset of conductivity. The interface structure and charge confinement in NdGaO3/SrTiO3 are probed by atomic-scale- resolved electron energy loss spectroscopy showing that, similarly to LaAlO3/SrTiO3, extra electronic charge confined in a sheet of about 1.5 nm in thickness is present at the NdGaO3/SrTiO3 interface. Electric transport measurements performed in dark and under radiation show remarkable similarities and provide evidence that the persistent perturbation induced by light is an intrinsic peculiar property of the three investigated oxide-based polar/non-polar interfaces. Our work sets a framework for understanding the previous contrasting results found in literature about photoconductivity in LaAlO3/SrTiO3 and highlights the connection between the origin of persistent photoconductivity and the origin of conductivity itself. An improved understanding of the photo- induced metastable electron-hole pairs might allow to shed a direct light on the complex physics of this system and on the recently proposed perspectives of oxide interfaces for solar energy conversion.

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preprint2012arXiv

A note on the action of $SL(m, \mathbb{Z}_n)$ on the ring $\mathbb{Z}^m_n$

We know that $\mathbb{Z}_n$ is a finite field for a prime number $n$. Let $m,n$ be arbitrary natural numbers and let $\mathbb{Z}^m_n= \mathbb{Z}_n \times\mathbb{Z}_n\times...\times\mathbb{Z}_n$ be the Cartesian product of $m$ rings $\mathbb{Z}_n$. In this note, we present the action of $SL(m, \mathbb{Z}_n)=\{A \in \mathbb{Z}^{m,m}_{n} : det A \equiv 1 (mod\simn)\}$, where $SL(m, \mathbb{Z}_n)$ for $n\geq 2$ is a group under matrix multiplication modulo $n$, on the ring $\mathbb{Z}^m_n$ as a right multiplication of a row vector of $\mathbb{Z}^m_n$ by a matrix of $SL(m, \mathbb{Z}_n)$ to determine the orbits of the ring $\mathbb{Z}^m_n$. This work is an extension of [1]

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preprint2012arXiv

Critical influence of target-to-substrate distance on conductive properties of LaGaO3/SrTiO3 interfaces deposited at 10-1 mbar oxygen pressure

We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the interface properties. These results demonstrate the growth of conducting interfaces at an oxygen pressure of 10-1 mbar, an experimental condition where a well-oxygenated heterostructures with a reduced content of oxygen defects is expected.

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preprint2012arXiv

Equivalent Binary Quadratic Form and the Extended Modular Group

Extended modular group $\barΠ=<R,T,U:R^2=T^2=U^3=(RT)^2=(RU)^2=1>$, where $ R:z\rightarrow -\bar{z}, \sim T:z\rightarrow\frac{-1}{z},\simU:z\rightarrow\frac{-1}{z +1} $, has been used to study some properties of the binary quadratic forms whose base points lie in the point set fundamental region $F_{\barΠ}$ (See \cite{Tekcan1, Flath}). In this paper we look at how base points have been used in the study of equivalent binary quadratic forms, and we prove that two positive definite forms are equivalent if and only if the base point of one form is mapped onto the base point of the other form under the action of the extended modular group and any positive definite integral form can be transformed into the reduced form of the same discriminant under the action of the extended modular group and extend these results for the subset $\QQ^*(\sqrt{-n})$ of the imaginary quadratic field $\QQ(\sqrt{-m})$.

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preprint2012arXiv

Regional System Identification and Computer Based Switchable Control of a Nonlinear Hot Air Blower System

This paper describes the design and implementation of linear controllers with a switching condition for a nonlinear hot air blower system (HABS) process trainer PT326. The system is interfaced with a computer through a USB based data acquisition module and interfacing circuitry. A calibration equation is implemented through computer in order to convert the amplified output of the sensor to temperature. Overall plant is nonlinear; therefore, system identification is performed in three different regions depending upon the plant input. For these three regions, three linear controllers are designed with closed-loop system having small rise time, settling time and overshoot. Switching of controllers is based on regions defined by plant input. In order to avoid the effect of discontinuity, due to switching of linear controllers, parameters of all linear controllers are taken closer to each other. Finally, discretized controllers along with switching condition are implemented for the plant through computer and practical results are demonstrated.

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preprint2012arXiv

Reversible and Persistent Photoconductivity at the NdGaO3/SrTiO3 Conducting Interface

The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with LaAlO3/SrTiO3 an all-perovskite structure, the insulating nature of the single building block and the polar-non polar character. Our work demonstrates that in NdGaO3/SrTiO3 a metallic layer of mobile electrons is formed, with properties comparable to LaAlO3/SrTiO3. The localization of the injected electrons at the Ti sites, within a few unit cells from the interface, was proved by Atomic-scale-resolved EELS analyses. The electric transport and photoconduction of samples were also investigated. We found that irradiation by photons below the SrTiO3 gap does not increase the carrier density, but slightly enhances low temperature mobility. A giant persistent photoconductivity effect was instead observed, even under irradiation by low energy photons, in highly resistive samples fabricated at non-optimal conditions. We discuss the results in the light of different mechanisms proposed for the two-dimensional electron gas formation. Both the ordinary and the persistent photoconductivity in these systems are addressed and analyzed.

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