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Muhammad Ashraful Alam

Muhammad Ashraful Alam appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallphysics.app-phphysics.ins-detBiological Physicscs.CYDistributed, Parallel, and Cluster Computingeess.SYphysics.class-phphysics.data-anSystems and Control

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Published work

7 published item(s)

preprint2020arXiv

A Memory Window Expression to Predict the Scaling Trends and Endurance of FeFETs

The commercialization of non-volatile memories based on ferroelectric transistors (FeFETs) has remained elusive due to scaling, retention, and endurance issues. Thus, it is important to develop accurate characterization tools to quantify the scaling and reliability limits of FeFETs. In this work, we propose to exploit an analytical expression for the Memory Window (MW, i.e., the difference between the threshold voltages due to polarization switching) as a tool to: i) identify a universal scaling behavior of MW regardless of the ferroelectric material; ii) predict endurance and explain its weak dependence on writing conditions; iii) give an alternative explanation for MW being lower than theoretical limits; and, based on this, iv) devise strategies to maximize MW for a given ferroelectric thickness. According to these findings, the characterization and analysis of MW would enable the systematic comparison of next-generation FeFET based on emerging ferroelectric materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Module Technology for Agrivoltaics: Vertical Bifacial vs. Tilted Monofacial Farms

Agrivoltaics is an innovative approach in which solar photovoltaic (PV) energy generation is collocated with agricultural production to enable food-energy-water synergies and landscape ecological conservation. This dual-use requirement leads to unique co-optimization challenges (e.g. shading, soiling, spacing) that make module technology and farm topology choices distinctly different from traditional solar farms. Here we compare the performance of the traditional optimally-titled North/South (N/S) faced monofacial farms with a potential alternative based on vertical East/West (E/W)-faced bifacial farms. Remarkably, the vertical farm produces essentially the same energy output and photosynthetically active radiation (PAR) compared to traditional farms as long as the PV array density is reduced to half or lower relative to that for the standard ground-mounted PV farms. Our results explain the relative merits of the traditional mono facial vs. vertical bifacial farms as a function of array density, acceptable PAR-deficit, and energy production. The combined PAR/Energy yields for the vertical bifacial farm may not always be superior, it could still be an attractive choice for agrivoltaics due to its distinct advantages such as minimum land coverage, least hindrance to the farm machinery and rainfall, inherent resilience to PV soiling, easier cleaning and cost advantages due to potentially reduced elevation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Resilient Cyberphysical Systems and their Application Drivers: A Technology Roadmap

Cyberphysical systems (CPS) are ubiquitous in our personal and professional lives, and they promise to dramatically improve micro-communities (e.g., urban farms, hospitals), macro-communities (e.g., cities and metropolises), urban structures (e.g., smart homes and cars), and living structures (e.g., human bodies, synthetic genomes). The question that we address in this article pertains to designing these CPS systems to be resilient-from-the-ground-up, and through progressive learning, resilient-by-reaction. An optimally designed system is resilient to both unique attacks and recurrent attacks, the latter with a lower overhead. Overall, the notion of resilience can be thought of in the light of three main sources of lack of resilience, as follows: exogenous factors, such as natural variations and attack scenarios; mismatch between engineered designs and exogenous factors ranging from DDoS (distributed denial-of-service) attacks or other cybersecurity nightmares, so called "black swan" events, disabling critical services of the municipal electrical grids and other connected infrastructures, data breaches, and network failures; and the fragility of engineered designs themselves encompassing bugs, human-computer interactions (HCI), and the overall complexity of real-world systems. In the paper, our focus is on design and deployment innovations that are broadly applicable across a range of CPS application areas.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Characterizing Self-Heating Dynamics Using Cyclostationary Measurements

Self-heating in surrounding gate transistors can degrade its on-current performance and reduce lifetime. If a transistor heats/cools with time-constants less than the inverse of the operating frequency, a predictable, frequency-independent performance is expected; if not, the signal pattern must be optimized for highest performance. Typically, time-constants are measured by expensive, ultra-fast instruments with high temporal resolution. Instead, here we demonstrate an alternate, inexpensive, cyclostationary measurement technique to characterize self-heating (and cooling) with sub-microsecond resolution. The results are independently confirmed by direct imaging of the transient heating/cooling of the channel temperature by the thermoreflectance (TR) method. A routine use of the proposed technique will help improve the surrounding gate transistor design and shorten the design cycle.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Emerging Ideas in Nanocantilever based Biological Sensors

In this review article, we focus on emerging nanocantilever based biological sensors and discuss the response of nanocantilevers towards bio-molecules capture. The article guides the reader through various modes of operation (e.g., static or dynamic) to detect the change in characteristics (e.g., mass, stiffness, and/or surface stress) of cantilever due to adsorption of bio-molecules on cantilever surface. First, we explain the classical linear resonant mode mass sensors and static stress based sensors. The effect of operating the cantilever in nonlinear regime is then illustrated through examples of bifurcation based mass sensors and electromechanical coupling based Flexure-FET biosensors. We believe that a new class of nonlinear sensors, with their extraordinary sensitivity towards bio-molecules capture, could be the potential candidate for low cost point-of-care applications.

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preprint2013arXiv

Prospects of Hysteresis-Free Abrupt Switching (0mV/dec) in Landau Switches

Sub-threshold swing (S) defines the sharpness of ON-OFF switching of a Field Effect Transistor (FET) with S=0 corresponding to abrupt switching characteristics. While thermodynamics dictates S to be greater than or equal to 60mV/dec for classical FETs, "Landau switches" use inherently unstable gate insulators to achieve abrupt switching. Unfortunately, S=0 switching is always achieved at the expense of an intrinsic hysteresis, making these switches unsuitable for low-power applications. The fundamental question therefore remains: Under what condition, hysteresis-free abrupt switching can be achieved in a Landau switch? In this paper, we first provide an intuitive classification of all charge based switches in terms of their energy landscapes and identify two-well energy landscape as the characteristic feature of Landau switches. We then use nanoelectromechanical field effect transistor (NEMFET) as an illustrative example of a Landau switch and conclude that a flat energy landscape is essential for hysteresis-free abrupt switching. In contrast, a hysteresis-free smooth sub-60mV/dec switching is obtained by stabilizing the unstable gate insulator in its unstable regime. Our conclusions have broad implications and may considerably simplify the design of next charge based logic switch.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Markov-Chain Formulation of Reaction-Diffusion Model and its Implications for Statistical Distribution of Interface Defects in Nanoscale Transistors

Continued scaling of nanoscale transistors leads to broad device-to-device fluctuation of parameters due to random dopant effects, channel length variation, interface trap generation, etc. In this paper, we obtain the statistics of negative bias temperature instability (NBTI)-induced interface defect generation in ultra-scaled MOSFET by Markov Chain Monte-Carlo (MCMC) solution of Reaction-Diffusion (R-D) model. Our results show that the interface defect generation at a particular stress time, i.e., NIT}@tSTS in small transistors should follow a skew-normal distribution and that the generation and annealing of interface defects are strongly correlated. Next, we use a random percolative network to demonstrate (which is also consistent with previously published results in literature based on separate techniques) that the distribution of threshold voltage shift for single interface defect, i.e., ΔVT@NIT is exponential, with finite number of transistors having zero ΔVT. Finally, we show that the statistics of ΔVT@tSTS - based on the convolution of NIT@tSTS and ΔVT@NIT - is broadly consistent with the available experimental data in literature.

0 citations0 reviewsNo code linkedOpen access