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Moshe Ben Shalom

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cond-mat.mes-hall

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preprint2019arXiv

Quantum Hall response to time-dependent strain gradients in graphene

Mechanical deformations of graphene induce a term in the Dirac Hamiltonian which is reminiscent of an electromagnetic vector potential. Strain gradients along particular lattice directions induce local pseudomagnetic fields and substantial energy gaps as indeed observed experimentally. Expanding this analogy, we propose to complement the pseudomagnetic field by a pseudoelectric field, generated by a time dependent oscillating stress applied to a graphene ribbon. The joint Hall-like response to these crossed fields results in a strain-induced charge current along the ribbon. We analyze in detail a particular experimental implementation in the (pseudo) quantum Hall regime with weak intervalley scattering. This allows us to predict an (approximately) quantized Hall current which is unaffected by screening due to diffusion currents.

preprint2018arXiv

Fluidity Onset in Graphene

Viscous electron fluids have emerged recently as a new paradigm of strongly-correlated electron transport in solids. Here we report on a direct observation of the transition to this long-sought-for state of matter in a high-mobility electron system in graphene. Unexpectedly, the electron flow is found to be interaction-dominated but non-hydrodynamic (quasiballistic) in a wide temperature range, showing signatures of viscous flows only at relatively high temperatures. The transition between the two regimes is characterized by a sharp maximum of negative resistance, probed in proximity to the current injector. The resistance decreases as the system goes deeper into the hydrodynamic regime. In a perfect darkness-before-daybreak manner, the interaction-dominated negative response is strongest at the transition to the quasiballistic regime. Our work provides the first demonstration of how the viscous fluid behavior emerges in an interacting electron system.

preprint2013arXiv

Anomalous response to gate voltage application in mesoscopic LaAlO_3/SrTiO_3 devices

We report on resistivity and Hall measurements performed on a series of narrow mesa devices fabricated from LaAlO_3/SrTiO_3 single interface heterostructure with a bridge width range of 1.5-10 microns. Upon applying back-gate voltage of the order of a few Volts, a strong increase in the sample resistance (up to factor of 35) is observed, suggesting a relatively large capacitance between the Hall-bar and the gate. The high value of this capacitance is due to the device geometry, and can be explained within an electrostatic model using the Thomas Fermi approximation. The Hall coefficient is sometimes a non-monotonic function of the gate voltage. This behavior is inconsistent with a single conduction band model. We show that a theoretical two-band model is consistent with this transport behavior, and indicates a metal to insulator transition in at least one of these bands.